Microelectronic build-up layers and methods of forming the same

Patent metadata

Field	Value
Publication number	US-2016374210-A1
Application number	US-201514905022-A
Country	US
Kind code	A1
Filing date	Feb 16, 2015
Priority date	Feb 16, 2015
Publication date	Dec 22, 2016
Grant date	—

Abstract

A build-up layer may be fabricated by forming a microelectronic dielectric layer comprising a dielectric material with a metallization catalyst dispersed therein, forming a primer layer on the microelectronic dielectric layer, and forming a recess through the primer layer and into the dielectric material layer. An activation layer may be formed in or on the exposed microelectronic dielectric layer within the recess, wherein the primer layer acts as a mask. A metal layer may be formed on the activation layer, such as with an electroless process. Thus, the resolution of the metal layer deposition may be precisely controlled by the process used to form the recess.

First claim

1 .- 25 . (canceled)

26 . A method of fabricating a microelectronic build-up layer, comprising:
forming a microelectronic dielectric layer comprising a dielectric material with a metallization catalyst dispersed therein, wherein the microelectronic dielectric layer includes a first surface; forming a primer layer on the microelectronic dielectric layer first surface; forming a recess through the primer layer and into the microelectronic dielectric layer; and forming a metal layer adjacent the microelectronic dielectric layer within the recess.

27 . The method of claim 26 , wherein forming the recess through the primer layer and into the microelectronic dielectric layer comprises laser ablating a recess through the primer layer and into the microelectronic dielectric layer.

28 . The method of claim 26 , wherein forming the microelectronic dielectric layer comprising the dielectric material with the metallization catalyst dispersed therein comprises an epoxy-polymer blend dielectric material.

29 . The method of claim 26 , wherein forming the microelectronic dielectric layer comprising the dielectric material with the metallization catalyst dispersed therein comprises a metallization catalyst selected from the group consisting of palladium salts, silver salts, copper salts, platinum salts, and nickel salts.

30 . The method of claim 26 , wherein forming the primer layer on the microelectronic dielectric layer first surface comprises forming an organic polymer primer layer on the microelectronic dielectric layer first surface.

31 . The method of claim 30 , wherein forming the organic polymer primer layer on the microelectronic dielectric layer first surface comprises forming an organic polymer primer layer selected from the group consisting of epoxy-phenol materials and epoxy-imide materials.

32 . The method of claim 26 , wherein forming the metal layer on the dielectric material layer within the recess comprises:
activating the microelectronic dielectric layer within the recess to form an activated layer within the dielectric material layer; and depositing a metal layer on the activated layer.

33 . The method of claim 32 , wherein activating the microelectronic dielectric layer comprises immersing the microelectronic dielectric layer and primer layer in an activation solution.

34 . The method of claim 33 , wherein immersing the microelectronic dielectric layer and primer layer in an activation solution comprising immersing the microelectronic dielectric layer and primer layer in a dimethylborane activation solution.

35 . The method of claim 32 , wherein depositing a metal layer on the activated layer comprises immersing the activated layer in a deposition solution.

36 . The method of claim 35 , wherein immersing the activated layer in a deposition solution comprising immersing activated layer in an aqueous deposition solution comprising a metal salt and a reducing agent.

37 . The method of claim 36 , wherein immersing the activated layer in an aqueous deposition solution comprising a metal salt and a reducing agent comprises immersing the activated layer in an aqueous deposition solution comprising a copper salt and a reducing agent.

38 . A microelectronic build-up layer, comprising:
a microelectronic dielectric layer comprising a dielectric material with a metallization catalyst dispersed therein, wherein the microelectronic dielectric layer includes a first surface; a primer layer on the microelectronic dielectric layer first surface; a recess through the primer layer and into the microelectronic dielectric layer; and a metal layer adjacent the microelectronic dielectric layer within the recess.

39 . The microelectronic build-up layer of claim 38 , wherein the recess through the primer layer and into the microelectronic dielectric layer comprises a laser ablated recess through the primer layer and into the microelectronic dielectric layer.

40 . The microelectronic build-up layer of claim 38 , wherein the microelectronic dielectric layer comprising the dielectric material with the metallization catalyst dispersed therein comprises an epoxy-polymer blend dielectric material.

41 . The microelectronic build-up layer of claim 38 , wherein the microelectronic dielectric layer comprising the dielectric material with the metallization catalyst dispersed therein comprises a metallization catalyst selected from the group consisting of palladium salts, silver salts, copper salts, platinum salts, and nickel salts.

42 . The microelectronic build-up layer of claim 38 , wherein the primer layer on the microelectronic dielectric layer first surface comprises an organic polymer primer layer on the microelectronic dielectric layer first surface.

43 . The microelectronic build-up layer of claim 42 , wherein the organic polymer primer layer on the microelectronic dielectric layer first surface comprises an organic polymer primer layer selected from the group consisting of epoxy-phenol materials and epoxy-imide materials.

44 . The microelectronic build-up layer of claim 38 , further comprising an activated layer disposed between the metal layer and the dielectric material layer within the recess.

45 . The microelectronic build-up layer of claim 38 , wherein the metal layer comprises a conformal metal layer.

46 . The microelectronic build-up layer of claim 38 , wherein the metal layer comprises a copper layer.

47 . A electronic system, comprising:
a board; and a microelectronic component attached to the board, wherein the microelectronic component includes microelectronic build-up layer, comprising:
a microelectronic dielectric layer comprising a dielectric material with a metallization catalyst dispersed therein, wherein the microelectronic dielectric layer includes a first surface;
a primer layer on the microelectronic dielectric layer first surface;
a recess through the primer layer and into the microelectronic dielectric layer; and
a metal layer adjacent the microelectronic dielectric layer within the recess.

48 . The electronic system of claim 47 , wherein the recess through the primer layer and into the microelectronic dielectric layer comprises a laser ablated recess through the primer layer and into the microelectronic dielectric layer.

49 . The electronic system of claim 47 , wherein the primer layer on the microelectronic dielectric layer first surface comprises an organic polymer primer layer on the microelectronic dielectric layer first surface.

50 . The electronic system of claim 47 , further comprising an activated layer disposed between the metal layer and the dielectric material layer within the recess.

Assignees

• Intel Corp

Inventors

• Marin Brandon C
• Ghosh Dastidar Trina
• Li Yonggang Yong
• Seneviratne Dilan

Classifications

• H10P14/46

  using a liquid · CPC title

• H10W70/69

  Insulating materials thereof · CPC title

• H10W70/05 Primary

  of insulating or insulated package substrates, or of interposers, or of redistribution layers (manufacture or treatment of leadframes H10W70/04) · CPC title

• H10W20/4421

  the principal metal being copper · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title