Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016372584-A1
Application number	US-201415104073-A
Country	US
Kind code	A1
Filing date	Sep 8, 2014
Priority date	Feb 10, 2014
Publication date	Dec 22, 2016
Grant date	—

Abstract

A semiconductor device includes a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided. A clearance between the body region and the anode region is longer than a product of electron mobility and electron lifetime in the n-type region between the body region and the anode region. A clearance between an end of the collector region on a sense diode region side and the body region is longer than a product of electron mobility and electron lifetime in the n-type region between the end and the body region.

First claim

1 . (canceled)

2 . (canceled)

3 . A semiconductor device, comprising a semiconductor substrate including a main IGBT region in which an IGBT is provided, a main diode region in which a diode is provided, a sense IGBT region in which an IGBT is provided, and a sense diode region in which a diode is provided,
wherein an area of the sense IGBT region is smaller than an area of the main IGBT region, an area of the sense diode region is smaller than an area of the main diode region, an emitter region, a body region, an IGBT drift region, a collector region, a gate insulating film, and a gate electrode are provided in the sense IGBT region, the emitter region is of n-type and exposed on a front surface of the semiconductor substrate, the body region is of p-type and in contact with the emitter region, the IGBT drift region is separated from the emitter region by the body region, the collector region is of p-type, exposed on a rear surface of the semiconductor substrate, and separated from the body region by the IGBT drift region, the gate insulating film is in contact with the body region, and the gate electrode faces the body region via the gate insulating film, an anode region, a diode drift region and a cathode region are provided in the sense diode region, the anode region is of p-type and exposed on the front surface of the semiconductor substrate, the diode drift region is in contact with the anode region, the cathode region is of n-type, is separated from the anode region by the diode drift region, is exposed on the rear surface of the semiconductor substrate, and has a higher n-type impurity density than the diode drift region, wherein the body region is separated from the anode region by the IGBT drift region and the diode drift region, a high density n-type region having a higher n-type impurity density than the IGBT drift region and the diode drift region is provided between the IGBT drift region and the diode drift region, and the high density n-type region extends from the front surface to a position deeper than intermediate portions in a thickness direction of the IGBT drift region and the diode drift region.

4 . (canceled)

5 . (canceled)

6 . (canceled)

Assignees

• Kimura Keisuke
• Kameyama Satoru
• Toyota Motor Co Ltd

Inventors

• Kimura Keisuke
• Kameyama Satoru

Classifications

• H10D8/00

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H10D64/117

  Recessed field plates, e.g. trench field plates or buried field plates · CPC title

• H10D62/142

  Anode regions of thyristors or collector regions of gated bipolar-mode devices · CPC title

• H10D62/115

  Dielectric isolations, e.g. air gaps · CPC title

• H10D12/481 Primary

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title