VAPOR DEPOSITION OF LiF THIN FILMS

Patent metadata

Field	Value
Publication number	US-2016369397-A1
Application number	US-201615186249-A
Country	US
Kind code	A1
Filing date	Jun 17, 2016
Priority date	Oct 12, 2012
Publication date	Dec 22, 2016
Grant date	—

Abstract

A vapor deposition process for forming a thin film on a substrate in a reaction chamber where the process includes contacting the substrate with a fluoride precursor. The process results in the formation of a lithium fluoride thin film.

First claim

1 .- 19 . (canceled)

20 . A chemical vapor deposition (CVD) process for forming a lithium fluoride thin film on a substrate in a reaction chamber, the process comprising simultaneously contacting a substrate in the reaction chamber with two precursors;
a first vapor phase lithium precursor and a second vapor phase fluoride precursor, wherein the first lithium precursor reacts with the second fluoride precursor on the substrate surface to form the lithium fluoride thin film.

21 . The chemical vapor deposition process of claim 20 , wherein the lithium precursor comprises a lithium beta diketonate, a lithium alkoxide or a lithium alkysilyl compound.

22 . The chemical vapor deposition process of claim 20 , wherein the lithium precursor and the fluoride precursor are provided to the reaction chamber in partially overlapping pulses.

23 . The chemical vapor deposition process of claim 22 , wherein the lithium precursor pulse overlaps 50% or less with the fluoride precursor pulse.

24 . The chemical vapor deposition process of claim 22 , wherein the lithium precursor pulse overlaps 30% or less with the fluoride precursor pulse.

25 . The chemical vapor deposition process of claim 20 , wherein the fluoride precursor is provided continuously to the reaction chamber and the lithium precursor is provided to the reaction chamber in pulses.

26 . The chemical vapor deposition process of claim 25 , wherein a concentration of the lithium precursor in the lithium precursor pulse is substantially higher than a concentration of the fluoride precursor continuously provided to the reaction chamber.

27 . The chemical vapor deposition process of claim 20 , wherein the lithium precursor is provided continuously to the reaction chamber and the fluoride precursor is provided to the reaction chamber in pulses.

28 . The chemical vapor deposition process of claim 27 , wherein a concentration of the fluoride precursor in the lithium precursor pulse is substantially higher than a concentration of the lithium precursor continuously provided to the reaction chamber.

29 . The chemical vapor deposition process of claim 20 , wherein the fluoride precursor and the lithium precursor are simultaneously provided to the reaction chamber.

30 . The chemical vapor deposition process of claim 29 , wherein a concentration of the fluoride precursor is different than a concentration of the lithium precursor.

31 . The vapor deposition process of claim 20 , wherein the substrate is at a temperature of between about 100° C. and about 800° C.

32 . A vapor deposition process for forming lithium fluoride on a substrate in a reaction chamber, the process comprising:
providing a vapor phase fluoride precursor to a surface of the substrate; and providing a separate vapor phase lithium precursor to the surface of the substrate, wherein the fluoride precursor and the lithium precursor react with each other on the surface of the substrate to form a lithium fluoride thin film.

33 . The process of claim 32 , wherein the lithium precursor comprises at least one of Lithd, lithium tert-butoxide, or lithium hexamethyldisilazane.

34 . The process of claim 32 , wherein the fluoride precursor comprises at least one of TiF 4 , TaF 5 , WF 6 , MoF x , F 2 , HF, hexafluoroacetylacetone, organic fluorine compounds, or metalbetadiketonates comprising fluorine.

35 . The process of claim 32 , wherein the vapor deposition process is a chemical vapor deposition process.

36 . The process of claim 35 , wherein the lithium precursor is chosen from the following: lithium 2,2,6,6-tetramethyl-3,5-heptanedionate, lithium tert-butoxide, and lithium hexamethyldisilazane; and
wherein the fluoride precursor is chosen from the following: TiF4, TaF 5 , WF 6 , MoF x , F 2 , HF, hexafluoroacetylacetone, organic fluorine compounds, and metal betadiketones comprising fluorine.

37 . The vapor deposition process of claim 32 , wherein the substrate is at a temperature of between about 200° C. and about 600° C.

38 . The vapor deposition process of claim 32 , wherein the formed lithium fluoride thin film has a conformality of at least about 50% on structures having an aspect ratio of at least about 3.

Assignees

• Asm Ip Holding Bv

Inventors

• Mäntymäki Miia
• Hämäläinen Jani
• Ritala Mikko
• Leskelä Markku

Classifications

• C23C16/30 Primary

  Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides · CPC title

• C23C16/08

  from metal halides · CPC title

• C23C16/45527 Primary

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/45534

  Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers · CPC title