Method for Depositing a Piezoelectric Film Containing AlN, and a Piezoelectric Film Containing AlN

Patent metadata

Field	Value
Publication number	US-2016369390-A1
Application number	US-201414901817-A
Country	US
Kind code	A1
Filing date	Jun 24, 2014
Priority date	Jul 16, 2013
Publication date	Dec 22, 2016
Grant date	—

Abstract

A method for depositing a piezoelectric film may be provided containing AIN on a substrate by means of magnetron sputtering of at least two targets—of which at least one target contains aluminum—within a vacuum chamber, into which a mixture of gases containing at least reactive nitrogen gas and an inert gas is introduced, and during which magnetron sputtering the unipolar pulse mode and the bipolar pulse mode are alternately used. A film may be provided containing AIN of formula Al X N Y O Z , where (0.1≦X≦1.2); (0.1≦Y≦1.2) and (0.001≦Z≦0.1)

First claim

1 . A method for the deposition of a piezoelectric film containing AlN on a substrate by means of magnetron sputtering of at least two targets, of which at least one target comprises aluminum, within a vacuum chamber, wherein a gas mixture comprising at least reactive nitrogen gas and an inert gas is introduced into the vacuum chamber, wherein the unipolar pulse mode and the bipolar pulse mode are alternately used during magnetron sputtering.

2 . The method according to claim 1 , wherein the percentage of the phases of the unipolar pulse mode and the percentage of the phases of the bipolar pulse mode are modified during the deposition of the piezoelectric film containing AlN.

3 . The method according to claim 1 , wherein a gas comprising at least one of the elements argon, krypton or xenon is used as inert gas.

4 . The method according to claim 1 , wherein the reactive gas oxygen is additionally introduced into the vacuum chamber 1 , wherein the amount of introduced oxygen is a maximum of 5% of the amount of the introduced nitrogen.

5 . The method according to claim 1 , wherein at least one target ( 4 ; 5 ) that comprises scandium is used.

6 . The method according to claim 5 , wherein a scandium target and an aluminum target are sputtered by means of co-sputtering.

7 . The method according to claim 1 , wherein the change between the unipolar pulse mode and the bipolar pulse mode is carried out at a frequency in the range of 50 Hz to 10 kHz.

8 . The method according to claim 1 , wherein the pressure in the vacuum chamber ( 1 ) is changed during the deposition of the piezoelectric film containing AlN.

9 . A piezoelectrically active film containing AlN having the piezoelectric charge constant d 33 , wherein the film containing AlN also additionally has the element oxygen, so that the film containing AIN corresponds to the formula Al X N Y O Z , wherein (0.1≦X≦1.2); (0.1≦Y≦1.2) and (0.001≦Z≦0.1).

10 . The piezoelectrically active film containing AlN according to claim 9 , wherein said film can additionally comprise the element scandium according to the formula Al X Sc U N Y O Z , wherein (0.1'X≦1.2); (0.1≦Y≦1.2); (0.1≦Y≦1.2) and (0.001≦Z'0.1).

Assignees

• Fraunhofer Ges Forschung
• Univ Dresden Tech

Inventors

• Bartzsch Hagen
• Glöss Daniel
• Frach Peter
• Barth Stephan

Classifications

• C23C14/3464

  using more than one target (C23C14/56 takes precedence) · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• C23C14/0036

  Reactive sputtering · CPC title

• C23C14/0641 Primary

  Nitrides (C23C14/0617 takes precedence) · CPC title

• C23C14/3485

  using pulsed power to the target · CPC title