Semiconductor structures including liners comprising alucone and related methods

Patent metadata

Field	Value
Publication number	US-2016365514-A1
Application number	US-201615244629-A
Country	US
Kind code	A1
Filing date	Aug 23, 2016
Priority date	Feb 25, 2014
Publication date	Dec 15, 2016
Grant date	—

Abstract

A semiconductor device including stacked structures. The stacked structures include at least two chalcogenide materials or alternating dielectric materials and conductive materials. A liner including alucone is formed on sidewalls of the stacked structures. Methods of forming the semiconductor device are also disclosed.

First claim

What is claimed is:

1 . A semiconductor device, comprising:
stack structures over a substrate; and a liner over sidewalls of at least a portion of the stack structures, the liner comprising a first portion comprising aluminum oxide in contact with the sidewalls of the stack structures and a second portion comprising alucone over the first portion.

2 . The semiconductor device of claim 1 , wherein the liner comprises a gradient of alucone and aluminum oxide over the sidewalls of the stack structures.

3 . The semiconductor device of claim 1 , wherein the second portion further comprises silicon atoms, nitrogen atoms, or a combination thereof.

4 . The semiconductor device of claim 1 , wherein the liner comprises a ratio of aluminum oxide to alucone of from about 1:1 to about 1:10.

5 . The semiconductor device of claim 1 , wherein the liner overlies an entirety of the sidewalls.

6 . The semiconductor device of claim 1 , wherein the liner further comprises a third portion between the first portion and the second portion, the third portion comprising a greater amount of alucone than the first portion.

7 . The semiconductor device of claim 1 , wherein adjacent stacks structures of the stack structures are separated from each other by a distance of between about 20 nm and about 60 nm.

8 . The semiconductor device of claim 1 , wherein the stack structures comprise a first chalcogenide material over the substrate and a second chalcogenide material over the first chalcogenide material.

9 . The semiconductor device of claim 1 , wherein the stack structures comprise alternating conductive materials and dielectric materials.

10 . A semiconductor device, comprising:
stack structures over a substrate; and a liner comprising alucone over at least a portion of sidewalls of the stack structures.

11 . The semiconductor device of claim 10 , wherein the liner comprises a first portion comprising aluminum oxide contacting sidewalls of the stack structures and a second portion comprising alucone over the first portion.

12 . The semiconductor device of claim 10 , wherein the liner has a thickness of between about 5 Å and about 30 Å.

13 . The semiconductor device of claim 10 , further comprising a charge trapping material over the liner.

14 . The semiconductor device of claim 10 , wherein the liner comprises a gradient of alucone, a concentration of alucone increasing from about zero percent at a portion of the liner proximal the stack structures to about one-hundred percent at a portion of the liner distal from the stack structures.

15 . The semiconductor device of claim 10 , wherein the stack structures comprise at least one chalcogenide material or alternating dielectric materials and conductive materials.

16 . The semiconductor device of claim 10 , wherein the stack structures comprise at least one chalcogenide material.

17 . A method of forming a semiconductor device, the method comprising:
forming stack structures over a substrate; forming aluminum oxide over and in contact with sidewalls of the stack structures; and forming alucone over the aluminum oxide.

18 . The method of claim 17 , wherein forming alucone over the aluminum oxide comprises a concentration of alucone increasing from about zero percent at a portion of the alucone proximal the aluminum oxide to about one-hundred percent at a portion of the alucone distal from the aluminum oxide.

19 . The method of claim 17 , wherein forming stack structures over a substrate comprises forming a first chalcogenide material over the substrate and forming a second chalcogenide material over the first chalcogenide material.

20 . The method of claim 17 , wherein forming stack structures over a substrate comprises forming alternating dielectric materials and conductive materials over the substrate.

Assignees

• Micron Technology Inc

Inventors

• Song Zhe
• Allen Tuman E
• Franklin Cole S
• Gealy F Daniel

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P14/6548

  by forming intermediate materials, e.g. capping layers or diffusion barriers · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/683 Primary

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P14/69391 Primary

  the material containing aluminium, e.g. Al2O3 · CPC title