Off-axis sputtering deposition for growth of single crystalline films of a broad range of complex materials

Patent metadata

Field	Value
Publication number	US-2016362812-A1
Application number	US-201615180467-A
Country	US
Kind code	A1
Filing date	Jun 13, 2016
Priority date	Jun 12, 2015
Publication date	Dec 15, 2016
Grant date	—

Abstract

Systems and methods are disclosed for growing crystalline films of a broad range of complex materials with high crystalline quality by off-axis sputtering deposition. The synthesis of sputtering targets relating to the systems and methods is also described. Materials that can be grown include binary, ternary and quaternary oxides, metals and alloys, and intermetallics with simple or complex crystal structures. The disclosed systems and methods can be regarded as a broadly applicable for the growth of many other materials having magnetic, electronic, and optical applications.

First claim

What is claimed is:

1 . A method for thin-film deposition of a material comprising:
providing a sputtering target, wherein the sputtering target is comprised of at least one pressed powder of at least one constituent material; providing a substrate, wherein the substrate is located at an angle relative to the sputtering target; applying energy to the sputtering target to deposit, via sputtering deposition, at least one film of the material on the substrate, wherein the material can comprise at least one nonvolatile single crystalline film, and wherein growth parameters associated with the sputtering deposition are optimized for the sputtering deposition of the material.

2 . The method of claim 1 , wherein the material can comprise one or more metals, intermetallic compounds, or one or more oxides.

3 . The method of claim 1 , wherein the growth parameters can comprise one or more of at least one sputtering gas, a total pressure of the at least one sputtering gas, an oxygen percentage in the at least one sputtering gas for oxide growth, a substrate location, a substrate temperature, a sputtering power source, and a deposition rate.

4 . The method of claim 3 , wherein the substrate location comprises an off-axis angle value from about 45 degrees to about 70 degrees, inclusive, with respect to a target normal direction, and moreover, is located a distance of about 2 inch to about 5 inch, inclusive, from the target for at least one approximately 2 inch-diameter target.

5 . The method of claim 3 , wherein the substrate temperature comprises a value from about 200 degrees centigrade to about 850 degrees centigrade, inclusive, and is dependent on one or more thermal properties of the at least one constituent material.

6 . The method of claim 3 , wherein the sputtering power source comprises a direct current (DC) power source for conducting targets, a radio-frequency (RF) power source for insulating and conducting targets, or a pulsed power source, and any other power sources used for sputtering deposition.

7 . The method of claim 3 , wherein the deposition rate comprises a value from about 5 nanometers per hour to about 120 nanometers per hour, inclusive, and is a function of the at least one constituent material.

8 . The method of claim 1 , wherein the at least one pressed powder comprises at least one sub-micron fine powder of at least one constituent material.

9 . A system for thin-film deposition of a material comprising:
a sputtering deposition system comprised of:
a sputter gun;
a sputter target, wherein the sputtering target is comprised of at least one pressed powder of at least one constituent material;
a substrate, wherein the substrate is located at an angle relative to the sputtering target;
a heater; and
an energy source,
wherein the material can comprise at least one nonvolatile single crystalline film deposited on the substrate using the sputter deposition system, and wherein growth parameters associated with the sputtering deposition system are optimized for a sputtering deposition of the material.

10 . The system of claim 9 , wherein the material can comprise one or more metals, intermetallic compounds or one or more oxides.

11 . The system of claim 9 , wherein the growth parameters can comprise one or more of at least one sputtering gas, a total pressure of the at least one sputtering gas, an oxygen percentage in the at least one sputtering gas for oxide growth, a substrate location, a substrate temperature, a sputtering power source, and a deposition rate.

12 . The system of claim 11 , wherein the substrate location comprises an off-axis angle value from about 45 degrees to about 70 degrees, inclusive, with respect to a target normal direction, and moreover, is located a distance of about 2 inch to about 5 inch, inclusive, from the target for at least one approximately 2 inch-diameter target.

13 . The system of claim 11 , wherein the substrate temperature comprises a value from about 200 degrees centigrade to about 850 degrees centigrade, inclusive, and is dependent on one or more thermal properties of the at least one constituent material.

14 . The system of claim 11 , wherein the sputtering power source comprises a direct current (DC) power source for conducting targets, a radio-frequency (RF) power source for insulating and conducting targets, or a pulsed power source.

15 . The system of claim 11 , wherein the deposition rate comprises a value from about 5 nanometers per hour to about 120 nanometers per hour, inclusive, and is a function of the at least one constituent material.

16 . The system of claim 9 , wherein the at least one pressed powder comprises at least one sub-micron fine powder of at least one constituent material.

17 . A method of forming a compressed powder sputtering target comprising:
provide one or more constituent materials for deposition; grind the one or more materials into a fine powder, wherein each particle of the fine powder has a generally uniform size; and compress the fine powders into the sputtering target.

18 . The method of claim 17 , wherein the one or more constituent materials comprise metals, alloys, simplex oxides, complex oxides, binary, ternary, quaternary, and more complex intermetallic compounds.

19 . The method of claim 18 , wherein the one or more metals, alloys, simplex oxides, complex oxides, binary, ternary, quaternary, and more complex intermetallic compounds comprise one or more of Yttrium iron garnet, Y 3 Fe 5 O 12 (YIG); Iron germanium intermetallic compound, FeGe; Cobalt iron silicon intermetallic Heusler compound, Co 2 FeSi; or Strontium iron molybdate, Sr 2 FeMoO 6 .

20 . The method of claim 17 , wherein the compressed fine powders comprise at least one sub-micron fine powder of at least one constituent material.

21 . The method of claim 17 , wherein at least one fine powder is compressed in order to form the at least one sputtering target.

22 . The method of claim 21 , wherein the fine powder is compressed using at least one die.

23 . The method of claim 22 , wherein the at least one die is circular, rectangular, polygonal, cylindrical, U-shape, ring-shape, or any other shape used for sputtering deposition.

24 . The method of claim 17 , wherein a supporting cup is used to hold the sputtering target together.

25 . The method of claim 24 , wherein the supporting cup is comprised from at least one nonmagnetic material.

26 . The method of claim 17 , wherein the sputtering target comprises at least one circular sputtering target having an about 2 inch diameter and a thickness up to and including about 0.25 inch.

27 . The method of claim 26 , wherein for the sputtering target having an about 2 inch diameter, the pressure for compressing the fine powders in order to form the at least one sputtering target ranges from about 1 metric ton to about 20 metric tons, inclusive, and is dependent on the one or more constituent materials.

Assignees

• Ohio State Innovation Foundation

Inventors

• Yang Fengyuan

Classifications

• C30B23/066 Primary

  Heating of the material to be evaporated · CPC title

• H01J2237/3322

  Problems associated with coating · CPC title

• C30B29/52

  Alloys · CPC title

• C30B23/08 Primary

  by condensing ionised vapours (by reactive sputtering C30B25/06) · CPC title

• H01J37/3426 Primary

  Material · CPC title