HYBRID CZTSSe PHOTOVOLTAIC DEVICE

Patent metadata

Field	Value
Publication number	US-2016359072-A1
Application number	US-201615234458-A
Country	US
Kind code	A1
Filing date	Aug 11, 2016
Priority date	Jun 28, 2013
Publication date	Dec 8, 2016
Grant date	—

Abstract

A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

First claim

What is claimed is:

1 . A hybrid absorber layer of a photovoltaic device, comprising:
a chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe), wherein the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) is intrinsic; and a first semiconductor layer including Cu—In—Ga—S,Se (CIGSSe), the semiconductor layer having a p-type conductivity, wherein a first surface of the first semiconductor layer is in contact with the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) and a second surface in contact with the first contact.

2 . The hybrid absorber layer as recited in claim 1 , wherein the CZTSSe includes Cu 2−x Zn 1+y Sn(S 1−z Se z ) 4+q wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1.

3 . The hybrid absorber layer as recited in claim 1 , wherein the CIGSSe of the first semiconductor layer includes CuIn x Ga (1−x) Se 2 where the value of x can vary from 1 to 0.

4 . The hybrid absorber as recited in claim 1 , wherein the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) is in contact with a buffer layer and the first semiconductor layer is in contact with the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) opposite the buffer layer.

5 . A photovoltaic device, comprising:
a first contact; a hybrid absorber layer comprising:
a chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe), wherein the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) is intrinsic; and
a first semiconductor layer including Cu—In—Ga—S,Se (CIGSSe), the semiconductor layer having a p-type conductivity, wherein a first surface of the first semiconductor layer is in contact with the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) and a second surface in contact with the first contact; and
a second semiconductor layer that is in contact with a surface of the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) that is opposite a surface of the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) that the first semiconductor layer is present on.

6 . The device as recited in claim 5 , further comprising a buffer layer having an n-type conductivity formed on the second semiconductor layer.

7 . The device as recited in claim 6 further comprising a transparent conductive contact layer formed on the buffer layer.

8 . The device as recited in claim 5 , wherein the CZTSSe includes Cu 2−x Zn 1+y Sn(S 1−z Se z ) 4+q wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1.

9 . The device as recited in claim 5 , wherein the CIGSSe layer of the first semiconductor layer includes CuInxGa (1−x) Se 2 where the value of x can vary from 1 to 0.

10 . The device as recited in claim 1 , wherein the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) is in contact with the buffer layer and the first semiconductor layer is in contact with the chalcogenide layer of Cu—Zn—Sn—S(Se) (CZTSSe) opposite the buffer layer.

11 . A photovoltaic device, comprising:
a first contact; a hybrid absorber layer in electrical communication with the first contact comprising:
a Cu—Zn—Sn—S(Se) (CZTSSe) layer, wherein the Cu—Zn—Sn—S(Se) (CZTSSe) layer is intrinsic; and
a first semiconductor layer in contact with the CZTSSe layer, wherein the first semiconductor layer is a p-type semiconductor layer;
a second semiconductor layer that is in contact with a surface of the Cu—Zn—Sn—S(Se) (CZTSSe) layer that is opposite a surface of the Cu—Zn—Sn—S(Se) (CZTSSe) layer that the first semiconductor layer is present on the Cu—Zn—Sn—S(Se) (CZTSSe) layer;
a buffer layer formed on the absorber layer, the buffer layer is an n-type semiconductor layer; and
metal contacts formed on the transparent conductive contact layer, the metal contacts and the transparent conductive contact layer forming a front light-receiving surface, wherein the at least one semiconductor layer, the Cu—Zn—Sn—S(Se) (CZTSSe) layer, and the buffer layer provide a p-i-n solar cell structure.

12 . The device as recited in claim 11 , wherein the CZTSSe layer includes Cu 2−x Zn 1+y Sn(S 1−z Se z ) 4+q wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; −1≦q≦1.

13 . The device as recited in claim 11 , wherein the at least one semiconductor layer includes Cu—In—Ga—S,Se (CIGSSe) or CuIn x Ga (1−x) Se 2 where the value of x can vary from 1 to 0.

14 . The device as recited in claim 11 , wherein the CZTSSe layer is closer to the light-receiving surface and on top of the at least one semiconductor layer.

15 . The device as recited in claim 11 , wherein the at least one semiconductor layer is closer to the light-receiving surface and on top of the CZTSSe layer.

Assignees

• IBM

Inventors

• Gokmen Tayfun
• Gunawan Oki
• Haight Richard A
• Kim Jeehwan
• Mitzi David B
• Winkler Mark T

Classifications

• Y02E10/541

  CuInSe2 material PV cells · CPC title

• H01L31/0328

  Electricity · mapped topic

• H01L31/077

  Electricity · mapped topic

• H01L31/0326

  Electricity · mapped topic

• H01L31/075 Primary

  Electricity · mapped topic