Substrate treatment apparatus and substrate treatment method

Patent metadata

Field	Value
Publication number	US-2016358780-A1
Application number	US-201615056069-A
Country	US
Kind code	A1
Filing date	Feb 29, 2016
Priority date	Jun 3, 2015
Publication date	Dec 8, 2016
Grant date	—

Abstract

In accordance with an embodiment, a substrate treatment apparatus includes a housing, a magnetic field generating portion and a microwave supply portion. The housing is configured to contain a substrate comprising a conductive layer and an insulating film in contact with the conductive layer. The magnetic field generating portion is configured to generate a magnetic field which penetrates the substrate. The microwave supply portion is configured to generate a microwave to heat the substrate, to apply the microwave to the substrate provided in the magnetic field in such a manner that the microwave is absorbed by unpaired electrons at an interface between the conductive layer and the insulating film or in the insulating film.

First claim

1 . A substrate treatment apparatus comprising:
a housing configured to contain a substrate comprising a conductive layer and an insulating film in contact with the conductive layer; a magnetic field generating portion configured to generate a magnetic field which penetrates the substrate; and a microwave supply portion configured to generate a microwave to heat the substrate, to apply the microwave to the substrate provided in the magnetic field in such a manner that the microwave is absorbed by unpaired electrons at an interface between the conductive layer and the insulating film or in the insulating film.

2 . The apparatus of claim 1 ,
wherein assuming that H is magnetic field intensity, H is decided so as to satisfy the following equation:
g =( h ν)/(β H )   (Equation 1)

in which h is Planck's constant, ν is the wavelength of the microwave, β is Bohr magneton and g is a constant number decided by the kind of dangling bond.

3 . The apparatus of claim 1 ,
wherein the microwave supply portion applies the microwave into the substrate from at least one of the side of the substrate on which the insulating film is formed and the side opposite to the surface of the substrate on which the insulating film is formed.

4 . The apparatus of claim 1 ,
wherein the magnetic field generating portion generates the magnetic field at a frequency less than a frequency at which heat is generated outside the substrate.

5 . The apparatus of claim 4 ,
wherein the magnetic field generating portion comprises a permanent magnet, and generates a direct-current magnetic field.

6 . A substrate treatment apparatus comprising:
a housing configured to contain a substrate comprising a conductive layer and an insulating film in contact with the conductive layer; a magnetic field generating portion configured to generate a magnetic field and applies the magnetic field to the substrate; a microwave supply portion configured to generate a microwave to heat the substrate, to apply the microwave to the substrate provided in the magnetic field in such a manner that the microwave is absorbed by unpaired electrons at an interface between the conductive layer and the insulating film or in the insulating film, wherein assuming that h is Planck's constant, ν is the wavelength of the microwave, β is Bohr magneton, H is magnetic field intensity and g is a constant number decided by the kind of dangling bond, the magnetic field intensity H is decided so as to satisfy the following equation:
g =( h ν)/(β H )   (Equation 1).

7 . The apparatus of claim 6 ,
wherein the microwave supply portion applies the microwave into the substrate from at least one of the side of the substrate on which the insulating film is formed and the side opposite to the surface of the substrate on which the insulating film is formed.

8 . The apparatus of claim 6 ,
wherein the magnetic field generating portion generates the magnetic field at a frequency less than a frequency at which heat is generated outside the substrate.

9 . The apparatus of claim 8 ,
wherein the magnetic field generating portion comprises a permanent magnet, and generates a direct-current magnetic field.

10 . A substrate treatment method comprising:
while applying a magnetic field to a substrate comprising a conductive layer and an insulating film in contact with the conductive layer, applying a microwave to the substrate in such a manner that the microwave is absorbed by unpaired electrons at an interface between the conductive layer and the insulating film or in the insulating film, the intensity of the microwave being sufficient to heat the substrate.

11 . The method of claim 10 ,
wherein the magnetic field is applied in a direction to penetrate the substrate.

12 . The method of claim 10 ,
wherein assuming that h is Planck's constant, ν is the wavelength of the microwave, β is Bohr magneton, H is magnetic field intensity and g is a constant number decided by the kind of dangling bond, the magnetic field intensity H is decided so as to satisfy the following equation:
g =( h ν)/((β H )   (Equation 1).

13 . The method of claim 10 ,
wherein the microwave is applied from at least one of the side of the substrate on which the insulating film is formed and the side opposite to the surface of the substrate on which the insulating film is formed.

14 . The method of claim 10 ,
wherein the frequency of the magnetic field is less than a frequency at which heat is generated outside the substrate.

15 . The method of claim 10 , further comprising:
horizontally rotating the substrate during the application of the microwave.

16 . The method of claim 10 ,
wherein the frequency of the microwave ranges from 0.8 GHz to 25 GHz.

17 . The method of claim 16 ,
wherein the temperature of the substrate during the application of the microwave ranges from 600° C. to 850° C.

18 . The method of claim 16 ,
wherein the temperature of the substrate during the application of the microwave ranges from 300° C. to 450° C.

19 . The method of claim 10 ,
wherein the insulating film comprises at least one of a silicon oxide film (SiO 2 ) and a high-dielectric-constant film.

Assignees

• Toshiba Kk

Inventors

• Isogai Tatsunori

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10D64/0134

  with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor · CPC title