Two-tier defect scan management
US-2024402922-A1 · Dec 5, 2024 · US
US2016357629A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016357629-A1 |
| Application number | US-201514835790-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 26, 2015 |
| Priority date | Jun 8, 2015 |
| Publication date | Dec 8, 2016 |
| Grant date | — |
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A system and method of performing selective error coding in memory management of a memory device are described. The method includes performing a process of detecting and correcting memory errors in the memory of the memory device either prior to or after a chip mark associated with the memory device is in place. The method also includes localizing hard errors of the memory device based on a second process of detecting the memory errors in the memory of the memory device, the hard errors being persistent memory errors that persist from the process of detecting and correcting the memory errors to the second process, determining an extent of the hard errors based on the localizing, and preventing placement of the chip mark or removing the chip mark after de-allocating one or more ranges of addresses based on a result of the determining the extent of the hard errors.
Opening claim text (preview).
What is claimed is: 1 . A method of performing selective error coding in memory management of a memory device, the method comprising: performing, using a processor, a process of detecting and correcting memory errors in the memory of the memory device either prior to or after a chip mark associated with the memory device is in place, the chip mark indicating all addresses of the memory device as bad; localizing hard errors of the memory device, using the processor, based on a second process of detecting the memory errors in the memory of the memory device, the hard errors being persistent memory errors that persist from the process of detecting and correcting the memory errors to the second process; determining an extent of the hard errors based on the localizing; and preventing placement of the chip mark or removing the chip mark to resume memory use of the memory device after de-allocating one or more ranges of addresses of the memory of the memory device based on a result of the determining the extent of the hard errors. 2 . The method according to claim 1 , wherein the performing the process of detecting and correcting the memory errors includes a first scrubbing process to correct soft errors. 3 . The method according to claim 1 , wherein the second process of detecting the memory errors includes a second scrubbing process. 4 . The method according to claim 3 , wherein the localizing the hard errors includes determining a number of sub-regions of the memory that are bad. 5 . The method according to claim 4 , wherein the determining the number of sub-regions of the memory that are bad includes determining the number of sub-regions of the memory with greater than a first threshold number of addresses that are bad. 6 . The method according to claim 4 , wherein the determining the extent of the hard errors includes determining whether the number of sub-regions of the memory that are bad is below a second threshold. 7 . The method according to claim 6 , wherein the preventing the placement of the chip mark or the removing the chip mark is done when the number of sub-regions of the memory that are bad is below the second threshold. 8 . The method according to claim 6 , wherein placing the chip mark or maintaining the chip mark is done when the number of sub-regions of the memory that are bad is above the second threshold.
forming cells needing refreshing or charge regeneration, i.e. dynamic cells · CPC title
Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP] · CPC title
Correcting systematically all correctable errors, i.e. scrubbing · CPC title
Indication or identification of errors, e.g. for repair · CPC title
Protection of memory contents; Detection of errors in memory contents · CPC title
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