Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting

Patent metadata

Field	Value
Publication number	US-2016357103-A1
Application number	US-201515117686-A
Country	US
Kind code	A1
Filing date	Feb 17, 2015
Priority date	Feb 21, 2014
Publication date	Dec 8, 2016
Grant date	—

Abstract

A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

First claim

1 . A photosensitization chemical-amplification type resist material used as a photosensitive resin composition in a lithography process including a pattern-exposure step of irradiating a predetermined site of a resist material film formed using the photosensitive resin composition with ionizing radiation or non-ionizing radiation having a wavelength of equal to or less than 400 nm, a flood-exposure step of irradiating the resist material film having undergone the pattern-exposure step with non-ionizing radiation having a wavelength which is longer than the wavelength of the non-ionizing radiation used in the pattern-exposure and is greater than 200 nm, a baking step of heating the resist material film having undergone the flood-exposure step, and a developing step of forming a resist pattern by bringing the resist material film having undergone the baking step into contact with a developer, the photosensitization chemical-amplification type resist material comprising:
(1) a base component which makes a portion subjected to the pattern-exposure soluble or insoluble in the developer after the baking step; and (2) a component generating a photosensitizer and an acid through exposure, wherein the component (2) is the following component (a), contains any two components among the following components (a) to (c), or contains all of the following components (a) to (c), (a) an acid-photosensitizer generator generating an acid and a photosensitizer, which absorbs non-ionizing radiation having a wavelength of greater than 200 nm, by being irradiated with ionizing radiation or non-ionizing radiation having a wavelength of equal to or less than 400 nm, (b) a photosensitizer precursor becoming a photosensitizer, which absorbs non-ionizing radiation having a wavelength of greater than 200 nm, by being irradiated with ionizing radiation or non-ionizing radiation having a wavelength of equal to or less than 400 nm, and (c) a photoacid generator generating an acid by being irradiated with ionizing radiation or non-ionizing radiation having a wavelength of equal to or less than 400 nm.

2 . The resist material according to claim 1 ,
wherein the photosensitizer generated from the component (2) through exposure contains a carbonyl compound.

3 . The resist material according to claim 2 ,
wherein the carbonyl compound is at least one compound selected from the group consisting of benzophenone derivatives, xanthone derivatives, thioxanthone derivatives, coumarin derivatives, and acridone derivatives.

4 . The resist material according to claim 2 ,
wherein the carbonyl compound is an acridone derivative.

5 . The resist material according to claim 2 ,
wherein the carbonyl compound is a naphthalene derivative or an anthracene derivative.

6 . The resist material according to claim 1 ,
wherein the component (a) contains at least one compound selected from the group consisting of sulfonium salt compounds represented by the following Formulae (I) to (III),

(In the formulae, each of R 1 , R 2 , R 1′ , R 2′ , R 1″ , R 2″ , R 3 , and R 4 independently represents a hydrogen atom; a phenyl group; a naphthyl group; an anthracenyl group; a phenoxy group; a naphthoxy group; an anthracenoxy group; an amino group; an amide group; a halogen atom; a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms; a phenoxy group substituted with an alkoxy group having 1 to 5 carbon atoms, a hydroxyl group, an amino group, an amide group, or an alkyl group having 1 to 5 carbon atoms; a phenyl group substituted with a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group, an amide group, or a hydroxyl group; a naphthoxy group substituted with an alkoxy group having 1 to 5 carbon atoms, an alkyl group having 1 to 5 carbon atoms, an amino group, an amide group, or a hydroxyl group; an anthracenoxy group substituted with an alkoxy group having 1 to 5 carbon atoms, an alkyl group having 1 to 5 carbon atoms, an amino group, an amide group, or a hydroxyl group; a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms substituted with an alkoxy group having 1 to 5 carbon atoms, a phenoxy group, a naphthoxy group, an anthracenoxy group, an amino group, an amide group, or a hydroxyl group; or a carbonyl group to which an alkyl group having 1 to 12 carbon atoms is bonded. In the formulae, the hydrogen atom of the hydroxyl group may be substituted with a phenyl group; a halogen atom; a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms; or a phenyl group substituted with a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, or a hydroxyl group. In the formulae, any two or more groups among R 1 , R 2 , R 1′ , R 2′ , R 1″ , R 2″ , R 3 , and R 4 may form a cyclic structure by being bonded to each other through a single bond, a double bond, or a bond containing —CH 2 —, —O—, —S—, —SO 2 —, —SO 2 NH—, —C(═O)—, —C(═O)O—, —NHCO—, —NHC(═O)NH—, —CHR e —, —CR e 2 —, —NH—, or —NR e —. R e represents a phenyl group; a phenoxy group; a halogen atom; a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms; a phenoxy group substituted with an alkoxy group having 1 to 5 carbon atoms, a hydroxyl group, or an alkyl group having 1 to 5 carbon atoms; or a phenyl group substituted with a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, or a hydroxyl group. In the formulae, X − represents an acid anion.)

7 . The resist material according to claim 1 ,
wherein the component (a) contains at least one of iodonium salt compounds represented by the following Formulae (IV) and (V),

(In the formulae, each of R 5 , R 6 , R 5′ , R 6′ , and R 7 independently represents a hydrogen atom; a phenyl group; a naphthyl group; an anthracenyl group; a phenoxy group; a naphthoxy group; an anthracenoxy group; an amino group; an amide group; a halogen atom; a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms; a phenoxy group substituted with an alkoxy group having 1 to 5 carbon atoms, a hydroxyl group, an amino group, an amide group, or an alkyl group having 1 to 5 carbon atoms; a phenyl group substituted with a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, an amino group, an amide group, or a hydroxyl group; a naphthoxy group substituted with an alkoxy group having 1 to 5 carbon atoms, an alkyl group having 1 to 5 carbon atoms, an amino group, an amide group, or a hydroxyl group; an anthracenoxy group substituted with an alkoxy group having 1 to 5 carbon atoms, an alkyl group having 1 to 5 carbon atoms, an amino group, an amide group, or a hydroxyl group; a linear, branched or cyclic and saturated or unsaturated hydrocarbon group having 1 to 30 carbon atoms substituted with an alkoxy group having 1 to 5 carbon atoms, a phenoxy group, a naphthoxy group, an anthracenoxy group, an amino group, an amide group, or a hydroxyl group; or a carbonyl group to which an alkyl group having 1 to 12 carbon atoms is bonded. In the formulae, the hydrogen atom of the hydroxyl group may be substituted with a phenyl group; a halogen atom; a linear, bran

Assignees

• Tokyo Electron Ltd
• Univ Osaka

Inventors

• Nagahara Seiji
• Tagawa Seiichi
• Oshima Akihiro

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• G03F7/0382

  the macromolecular compound being present in a chemically amplified negative photoresist composition · CPC title

• G03F7/38

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/2041

  in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title