Oxide film, integrated circuit device, and methods of forming the same

Patent metadata

Field	Value
Publication number	US-2016343799-A1
Application number	US-201514972903-A
Country	US
Kind code	A1
Filing date	Dec 17, 2015
Priority date	May 19, 2015
Publication date	Nov 24, 2016
Grant date	—

Abstract

A doped mold film is formed with a dopant concentration gradient in the doped mold film that continuously varies in a thickness direction and a portion of the doped mold film is etched in the thickness direction to form a hole so that an electrode can be formed along an inner wall of the hole. The electrode thus formed includes a first outer wall surface, a second outer wall surface, and a third outer wall surface wherein the first outer wall surface is in contact with a sidewall of an insulating pattern formed on a substrate within a through hole formed in the insulating pattern; the second outer wall surface is in contact with a top surface of the insulating pattern and extends in a lateral direction; the third outer wall surface is spaced apart from the first outer wall surface with the second outer wall surface therebetween; and the third outer wall surface extends on the insulating pattern in a direction away from the substrate.

First claim

1 - 20 . (canceled)

21 . A method of manufacturing an integrated circuit (IC) device, the method comprising:
forming a doped mold film on the substrate while continuously varying a flow rate of at least one dopant source supplied to a substrate, the doped mold film having a dopant concentration gradient which continuously varies in a thickness direction of the doped mold film; forming a hole in the doped mold film by etching a portion of the doped mold film in the thickness direction; and forming an electrode which extends along an inner wall of the hole.

22 . The method of claim 21 , wherein a step of forming the doped mold film comprises forming the doped mold film such that a dopant concentration continuously decreases in a direction away from the substrate in the thickness direction of the doped mold film.

23 . The method of claim 21 , wherein a step of forming the doped mold film comprises supplying a plurality of dopant sources for providing a plurality of different dopant species to the substrate,
wherein the total amount of the plurality of dopant sources supplied to the substrate continuously decreases during the forming of the doped mold film.

24 . The method of claim 21 , wherein a step of forming the doped mold film comprises supplying a plurality of dopant sources for providing a plurality of different dopant species to the substrate, and
also wherein the sum of the concentrations of the plurality of dopants included in the doped mold film continuously decreases in a direction away from the substrate in the thickness direction of the doped mold film.

25 . The method of claim 21 , wherein a step of forming the doped mold film comprises supplying a first dopant source to the substrate at a constant flow rate with respect to time while supplying a second dopant source different from the first dopant source to the substrate, and
also wherein a step of supplying the second dopant source comprises continuously decreasing the flow rate of the second dopant source with respect to time.

26 . The method of claim 21 , wherein a step of forming the doped mold film comprises supplying a first dopant source for providing a first dopant species to the substrate and a second dopant source for providing a second dopant species different from the first dopant species to the substrate,
wherein the sum of a concentration of the first dopant species and a concentration of the second dopant species in the doped mold film continuously decreases in a direction away from the substrate in the thickness direction of the doped mold film.

27 . The method of claim 21 , wherein a step of forming the doped mold film comprises:
a first operation of supplying a first dopant source for providing a first dopant species to the substrate while also supplying a second dopant source for providing a second dopant species different from the first dopant species to the substrate; and a second operation of supplying only one selected dopant source selected from the first dopant source and the second dopant source to the substrate.

28 . The method of claim 27 , wherein the first operation comprises continuously decreasing the sum of a first flow rate of the first dopant source and a second flow rate of the second dopant source with respect to time.

29 . The method of claim 27 , wherein the first operation comprises supplying the first dopant source at a first flow rate that is constant with respect to time and supplying the second dopant source at a second flow rate which is continuously decreased with respect to time.

30 . The method of claim 27 , wherein the second operation comprises supplying the selected dopant source to the substrate at a flow rate which is continuously decreased with respect to time.

31 . A method of manufacturing an integrated circuit (IC) device, the method comprising:
forming a doped mold film on a substrate having a conductive region while continuously varying a flow rate of at least one dopant source supplied to the substrate, the doped mold film having a dopant concentration gradient which continuously varies in a thickness direction of the doped mold film; forming a capping mold film on the doped mold film; forming a support film on the capping mold film; forming a hole in the support film, the capping mold film, and the doped mold film by etching the support film, the capping mold film, and the doped mold film, the hole exposing the conductive region; and forming an electrode within the hole, the electrode having an outer sidewall facing a sidewall of the support film, a sidewall of the capping mold film, and a sidewall of the doped mold film, each of which is exposed within the hole.

32 . The method of claim 31 , wherein a step of forming the doped mold film comprises forming the doped mold film such that a dopant concentration continuously decreases in a direction away from the substrate in the thickness direction of the doped mold film.

33 . The method of claim 31 , wherein a step of forming the doped mold film comprises continuously decreasing the total amount of the at least one dopant source supplied to the substrate as the thickness of the doped mold film increases.

34 . The method of claim 31 , wherein a step of forming the doped mold film comprises:
forming a first doped mold film on the substrate such that a concentration of a first dopant species continuously decreases in a direction away from the substrate in the thickness direction of the first doped mold film; and forming a second doped mold film on the first doped mold film such that a concentration of a second dopant species different from the first dopant species continuously decreases in a direction away from the first doped mold film in the thickness direction of the second doped mold film.

35 . The method of claim 34 , wherein a step of forming the first doped mold film comprises supplying a first dopant source for providing the first dopant species to the substrate at a first dopant source flow rate while also supplying a second dopant source for providing the second dopant species to the substrate at a constant flow rate with respect to time with respect to time,
wherein the first dopant source flow rate is continuously decreased with respect to time.

36 . The method of claim 34 , wherein a step of forming the second doped mold film comprises supplying a second dopant source at a flow rate which is continuously decreased with respect to time.

37 . The method of claim 34 , wherein at least a partial region of the doped mold film includes a plurality of dopant species including different dopant elements,
wherein the sum of the respective concentrations of the plurality of dopant species included in the doped mold film continuously decreases in a direction away from the substrate in the thickness direction of the doped mold film in at least the partial region of the doped mold film.

38 . The method of claim 31 , wherein a step of forming the doped mold film comprises supplying a silicon source to the substrate while also supplying a plurality of dopant sources for providing a plurality of different dopant species to the substrate,
wherein flow rates of the plurality of dopant sources are continuously decreased with respect to time, and also wherein the step of forming the capping mold film comprises supplying the silicon source without supplying a dopant source.

39 . The method of claim 31 , wherein a step of forming the hole comprises:
forming a preliminary hole by sequentially dry etching the support

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yi Ha-Young
• Lee Jun-Won
• Choi Byoung-Deog
• Lee Jong-Myeong
• Kim Mun-Jun
• Kim Hong-Gun

Classifications

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/496

  Capacitor integral with wiring layers · CPC title

• H10W20/097

  by thermally treating · CPC title

• H10W20/071

  of dielectric parts thereof · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title