Deposition apparatus, apparatus for successive deposition, and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2016343589-A1
Application number	US-201615230696-A
Country	US
Kind code	A1
Filing date	Aug 8, 2016
Priority date	Sep 13, 2010
Publication date	Nov 24, 2016
Grant date	—

Abstract

An oxide semiconductor layer is formed with a deposition apparatus including a transfer mechanism for a substrate, a first deposition chamber in which an oxide semiconductor is deposited, and a first heating chamber in which first heat treatment is performed. The first deposition chamber and the first heating chamber are sequentially provided along a path of the substrate transferred by the transfer mechanism. The substrate is held so that an angle formed by a deposition surface of the substrate and the vertical direction is in a range of greater than or equal to 1° and less than or equal to 30°. Without exposure to the air, the first heat treatment can be performed after a first film is formed over the substrate.

First claim

What is claimed is:

1 . A deposition method comprising the steps of:
forming a first film comprising an oxide over a substrate in a first deposition chamber; and then performing a first heat treatment in a first heating chamber without exposure to air, wherein the substrate is processed while being held so that an angle formed by a deposition surface of the substrate and a vertical direction is in a range of greater than or equal to 1° and less than or equal to 30°.

2 . The deposition method according to claim 1 , wherein the first film comprises an oxide semiconductor.

3 . A deposition method comprising the steps of:
forming a first film comprising an insulating film over a substrate in a first deposition chamber; performing a first heat treatment in a first heating chamber; forming a second film comprising an oxide in a second deposition chamber; and performing a second heat treatment in a second heating chamber, wherein the substrate is processed while being held so that an angle formed by a deposition surface of the substrate and a vertical direction is in a range of greater than or equal to 1° and less than or equal to 30°.

4 . The deposition method according to claim 3 , wherein the second film comprises an oxide semiconductor.

5 . A deposition method comprising the steps of:
forming a first film comprising an oxide including at least a first metal element and a second metal element over a substrate in a first deposition chamber; performing a first heat treatment in a first heating chamber; forming a second film comprising an oxide in a second deposition chamber; and performing a second heat treatment in a second heating chamber, wherein the substrate is processed while being held so that an angle formed by a deposition surface of the substrate and a vertical direction is in a range of greater than or equal to 1° and less than or equal to 30°.

6 . The deposition method according to claim 5 , wherein the second film comprises an oxide semiconductor.

7 . The deposition method according to claim 5 , wherein the first metal element is zinc.

8 . The deposition method according to claim 5 , wherein the second metal element is gallium.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2922 Primary

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title