Oxide sintered body, method for producing same and sputtering target

Patent metadata

Field	Value
Publication number	US-2016343554-A1
Application number	US-201415107993-A
Country	US
Kind code	A1
Filing date	Dec 18, 2014
Priority date	Dec 27, 2013
Publication date	Nov 24, 2016
Grant date	—

Abstract

An oxide sintered body comprising a bixbyite phase composed of In 2 O 3 and an A 3 B 5 O 12 phase (wherein A is one or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and B is one or more elements selected from the group consisting of Al and Ga).

First claim

1 . An oxide sintered body comprising a bixbyite phase composed of In 2 O 3 and an A 3 B 5 O 12 phase (wherein A is one or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and B is one or more elements selected from the group consisting of Al and Ga).

2 . The oxide sintered body according to claim 1 , wherein A is one or more elements selected from the group consisting of Y, Ce, Nd, Sm, Eu and Gd.

3 . The oxide sintered body according to claim 1 , wherein either one or both of the element A and the element B is (are) in a substitutional solid solution state in the bixbyite phase.

4 . The oxide sintered body according to claim 1 , wherein the atomic ratio of indium, the element A and the element B contained in the oxide sintered body, (A+B)/(In+A+B), is 0.01 to 0.50.

5 . The oxide sintered body according to claim 1 , wherein the electrical resistivity is 1 mΩcm or more and 1000 mΩcm or less.

6 . A method for producing an oxide sintered body comprising the steps of:
preparing mixture powder by mixing raw material powder comprising indium, raw material powder comprising A which is one or more elements selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu and raw material powder comprising B which is one or more elements selected from the group consisting of Al and Ga; shaping the mixture powder to produce a shaped body; and firing the shaped body at 1200° C. to 1650° C. for 10 hours or longer.

7 . The method for producing an oxide sintered body according to claim 6 , wherein an atomic ratio (A+B)/(In+A+B) of the mixture powder is 0.01 to 0.50.

8 . A sputtering target obtained by using the oxide sintered body according to claim 1 .

9 . An oxide thin film formed by using the sputtering target according to claim 8 .

10 . A thin film transistor in which the oxide thin film according to claim 9 is used.

11 . The oxide sintered body according to claim 1 , wherein the maximum particle size of crystals of the A 3 B 5 O 12 phase is 20 μm or less.

12 . The thin film transistor according to claim 10 , wherein the thin film transistor is a channel-doped type thin film transistor.

13 . An electronic apparatus in which the thin film transistor according to claim 10 is used.

Assignees

• Idemitsu Kosan Co

Inventors

• Tomai Shigekazu
• Inoue Kazuyoshi
• Ebata Kazuaki
• Shibata Masatoshi
• Utsuno Futoshi
• Tsuruma Yuki
• Ishihara Yu

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• H01J37/3491

  Manufacturing of targets · CPC title

• C04B2235/3224

  Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide · CPC title

• C04B2235/3222

  Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4) · CPC title