Diagnostic device, semiconductor manufacturing equipment system, semiconductor equipment manufacturing system, and diagnostic method
US-2024321608-A1 · Sep 26, 2024 · US
US2016341682A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016341682-A1 |
| Application number | US-201615157770-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 18, 2016 |
| Priority date | May 20, 2015 |
| Publication date | Nov 24, 2016 |
| Grant date | — |
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Official abstract text for this publication.
A thermal conductivity detector with a bar which is arranged in the center and in the longitudinal direction of a channel such that it can be flowed around by a fluid and is supported unilaterally on a support traversing the channel, which has a support arm on each of the two sides of the connection with the bar, wherein the bar and the support are made of doped silicon and on one side, under an intermediate layer of an insulating layer, have a metal layer which is interrupted in one region of one of the support arms and is in contact there with the doped silicon through the insulating layer on the side next to the support arm and at the free end of the bar respectively.
Opening claim text (preview).
What is claimed is: 1 . A thermal conductivity detector comprising: a channel; a bar arranged in a center and in a longitudinal direction of the channel of the detector such fluid can flow around said bar; a support traversing the channel and unilaterally supporting the bar; said support having a support arm on each of two sides of a connection with the bar; wherein the bar and the support are made of doped silicon and on one side, under an intermediate layer of an insulating layer, have a metal layer which is interrupted in one region of one of support arm and is in contact there with the doped silicon through the insulating layer on a side adjacent to the support arm and at a free end of the bar, respectively. 2 . The thermal conductivity detector as claimed in claim 1 , where in the insulating layer is made of silicon dioxide. 3 . The thermal conductivity detector as claimed in claim 1 , wherein the metal layer is made of gold. 4 . The thermal conductivity detector as claimed in claim 2 , wherein the metal layer is made of gold. 5 . The thermal conductivity detector as claimed in claim 1 , further comprising: at least one further identically structured and supported bar which is arranged immediately before or after a first bar in the longitudinal direction of the channel. 6 . The thermal conductivity detector as claimed in claim 5 , further comprising: an even number of bars arranged in a mirror image in relation to an axis extending across the channel. 7 . The thermal conductivity detector as claimed in claim 5 , wherein heating elements formed by bars and the metal layers supported thereby are connected electrically in parallel. 8 . The thermal conductivity detector as claimed in claim 6 , wherein heating elements formed by the bars and the metal layers supported thereby are connected electrically in parallel. 9 . The thermal conductivity detector as claimed in claim 5 , wherein heating elements formed by bars and the metal layers supported thereby are connected electrically in series. 10 . The thermal conductivity detector as claimed in claim 6 , wherein heating elements formed by the bars and the metal layers supported thereby are connected electrically in series.
by investigating thermal conductivity (by calorimetry G01N25/20; by measuring change of resistance of an electrically-heated body G01N27/18) · CPC title
Thermal conductivity detectors · CPC title
caused by changes in the thermal conductivity of a surrounding material to be tested (G01N27/20 takes precedence) · CPC title
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