Post chemical mechanical polishing formulations and method of use

Patent metadata

Field	Value
Publication number	US-2016340620-A1
Application number	US-201515115165-A
Country	US
Kind code	A1
Filing date	Jan 29, 2015
Priority date	Jan 29, 2014
Publication date	Nov 24, 2016
Grant date	—

Abstract

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

First claim

1 . A cleaning composition comprising at least one quaternary base, at least one organic amine, at least one corrosion inhibitor, and at least one solvent, wherein the corrosion inhibitor is selected from the group consisting of 4-methylpyrazole, pyrazole, 2-amino-thiazole, 2-amino-1,3,4-thiadiazole, pterine, pyrazine, cytosine, pyridazine, derivatives thereof, and combinations thereof, and wherein the cleaning composition is substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide.

2 . The cleaning composition of claim 1 , wherein the at least one organic amine comprises a species selected from the group consisting of aminoethylethanolamine, N-methylaminoethanol, aminoethoxyethanol, dimethylaminoethoxyethanol, diethanolamine, N-methyldiethanolamine, monoethanolamine, triethanolamine, 1-amino-2-propanol, 3-amino-1-propanol, diisopropylamine, isopropylamine, 2-amino-1-butanol, isobutanolamine, other C 1 -C 8 alkanolamines, triethylenediamine, ethylenediamine, hexamethylenediamine, diethylenetriamine, triethylamine, trimethylamine, 1-methoxy-2-aminoethane, tetraethylenepentamine (TEPA), 4-(2-hydroxyethyl)morpholine (HEM), N-aminoethylpiperazine (N-AEP), ethylenediaminetetraacetic acid (EDTA), 1,2-cyclohexanediamine-N,N,N′,N′-tetraacetic acid (CDTA), glycine/ascorbic acid, iminodiacetic acid (IDA), 2-(hydroxyethyl)iminodiacetic acid (HIDA), nitrilotriacetic acid, thiourea, 1,1,3,3-tetramethylurea, urea, urea derivatives, glycine, alanine, arginine, asparagine, aspartic acid, cysteine, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, piperadine, N-(2-aminoethyl) piperadine, proline, pyrrolidine, serine, threonine, tryptophan, tyrosine, valine, and combinations thereof.

3 . The cleaning composition of claim 1 , wherein the at least one quaternary base comprises a species selected from the group consisting of tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), tributylmethylammonium hydroxide (TBMAH), benzyltrimethylammonium hydroxide (BTMAH), choline hydroxide, tris(2-hydroxyethyl)methyl ammonium hydroxide, diethyldimethylammonium hydroxide, choline hydroxide, and combinations thereof.

4 . The cleaning composition of claim 1 , further comprising at least one complexing agent, wherein the at least one complexing agent comprises a species selected from the group consisting of acetic acid, acetone oxime, acrylic acid, adipic acid, alanine, arginine, asparagine, aspartic acid, betaine, dimethyl glyoxime, formic acid, fumaric acid, gluconic acid, glutamic acid, glutamine, glutaric acid, glyceric acid, glycerol, glycolic acid, glyoxylic acid, histidine, iminodiacetic acid, isophthalic acid, itaconic acid, lactic acid, leucine, lysine, maleic acid, maleic anhydride, malic acid, malonic acid, mandelic acid, 2,4-pentanedione, phenylacetic acid, phenylalanine, phthalic acid, proline, propionic acid, pyrocatecol, pyromellitic acid, quinic acid, serine, sorbitol, succinic acid, tartaric acid, terephthalic acid, trimellitic acid, trimesic acid, tyrosine, valine, xylitol, ethylenediamine, oxalic acid, tannic acid, benzoic acid, ammonium benzoate, catechol, pyrogallol, resorcinol, hydroquinone, cyanuric acid, barbituric acid, 1,2-dimethylbarbituric acid, pyruvic acid, phosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP), propanethiol, benzohydroxamic acids, salts and derivatives thereof, and combinations thereof.

5 . The cleaning composition of claim 1 , wherein the solvent comprises water.

6 . The cleaning composition of claim 1 , further comprising residue and contaminants, wherein the residue comprises post-CMP residue, post-etch residue, post-ash residue, or combinations thereof.

7 . (canceled)

8 . (canceled)

9 . The cleaning composition of claim 1 , wherein the composition is substantially devoid of at least one of oxidizing agents; fluoride-containing sources; abrasive materials; and combinations thereof.

10 . A method of removing residue and contaminants from a microelectronic device having said residue and contaminants thereon, said method comprising contacting the microelectronic device with a cleaning composition of claim 1 for sufficient time to at least partially clean said residue and contaminants from the microelectronic device.

11 . A cleaning composition comprising at least one cleaning additive, at least one complexing agent, and at least one basic compound, wherein the composition is substantially devoid of amines, alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide.

12 . (canceled)

13 . The cleaning composition of claim 11 , wherein the at least one basic compound is a species selected from the group consisting of (NR 1 R 2 R 3 R 4 )OH, (PR 1 R 2 R 3 R 4 )OH, (R 1 R 2 N)(R 3 R 4 N)C═NR 5 , and any combination thereof, wherein R 1 , R 2 , R 3 , R 4 and R 5 may be the same as or different from one another and are selected from the group consisting of hydrogen, straight-chained C 1 -C 6 alkyl, branched C 1 -C 6 alkyl, C 1 -C 6 alkanol, substituted C 6 -C 10 aryl, unsubstituted C 6 -C 10 aryl, CH 2 CH 2 CH 2 C(H)NH 2 COOH, and any combination thereof, with the proviso that when the basic compound is (NR 1 R 2 R 3 R 4 )OH, R 1 , R 2 , R 3 and R 4 cannot simultaneously be methyl.

14 . The cleaning composition of claim 11 , wherein the at least one basic compound is selected from the group consisting of tetrabutylphosphonium hydroxide (TBPH), tetramethylphosphonium hydroxide, tetraethylphosphonium hydroxide, tetrapropylphosphonium hydroxide, benzyltriphenylphosphonium hydroxide, methyl triphenylphosphonium hydroxide, ethyl triphenylphosphonium hydroxide, N-propyl triphenylphosphonium hydroxide, tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH), tetrabutylammonium hydroxide (TBAH), trimethylethylammonium hydroxide, diethyldimethylammonium hydroxide, tributylmethylammonium hydroxide (TBMAH), benzyltrimethylammonium hydroxide (BTMAH), choline hydroxide, tetrabutylphosphonium hydroxide, guanidine acetate, 1,1,3,3-tetramethyl guanidine, guanidine carbonate, arginine, and combinations thereof.

15 . The cleaning composition of claim 11 , wherein the complexing agent comprises at least one species selected from the group consisting of ethylenediaminetetraacetic acid (EDTA), 1,2-cyclohexanediamine-N,N,N′,N′-tetraacetic acid (CDTA), 4-(2-hydroxyethyl)morpholine (HEM), N-aminoethylpiperazine (N-AEP), glycine, ascorbic acid, iminodiacetic acid (IDA), 2-(hydroxyethyl)iminodiacetic acid (HIDA), nitrilotriacetic acid, alanine, arginine, asparagine, aspartic acid, cysteine, glutamic acid, glutamine, histidine, isoleucine, leucine, lysine, methionine, phenylalanine, proline, serine, threonine, tryptophan, tyrosine, valine, gallic acid, boric acid, acetic acid, acetone oxime, acrylic acid, adipic acid, betaine, dimethyl glyoxime, formic acid, fumaric acid, gluconic acid, glutaric acid, glyceric acid, glycolic acid, glyoxylic acid, isophthalic acid, itaconic acid, lactic acid, maleic acid, maleic anhydride, malic acid, malonic acid, mandelic acid, 2,4-pentanedione, phenylacetic acid, phthalic acid, proline, propionic acid, pyrocatecol, pyromellitic acid, quinic acid, sorbitol, succinic acid, tartaric acid, terephthalic acid, trimellitic acid, trimesic acid, tyrosine, xylitol, 1,5,9-triazacyclododecane-N,N′,N″-tris(methylenephosphonic acid) (DOTRP), 1,4,7,10-tetraazacyclododecane-N,N′,N″,N′″-tetrakis(methylenephosphonic acid) (DOTP), nitrilotris(methylene)triphosphonic acid, diethylenetriaminepenta(methylenephosphonic acid) (DETA

Assignees

• Advanced Tech Materials
• Atmi Taiwan Co Ltd

Inventors

• Sun Laisheng
• Zhang Peng
• Liu Jun
• Medd Steven
• Barnes Jeffrey A
• Jenq Shrane Ning

Classifications

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/237

  the processing being a planarisation of insulating layers · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• C11D1/62

  Quaternary ammonium compounds · CPC title

• C23G1/20 Primary

  Other heavy metals · CPC title