Method for Forming FinFET Devices

Patent metadata

Field	Value
Publication number	US-2016336398-A1
Application number	US-201615222080-A
Country	US
Kind code	A1
Filing date	Jul 28, 2016
Priority date	Mar 31, 2015
Publication date	Nov 17, 2016
Grant date	—

Abstract

An apparatus comprises a first semiconductor fin, a second semiconductor fin and a third semiconductor fin over a substrate, wherein the first semiconductor fin and the second semiconductor fin are separated by a first isolation region and the second semiconductor fin and the third semiconductor fin are separated by a second isolation region, and wherein a width of the first isolation region is greater than a width of the second isolation region.

First claim

What is claimed is:

1 . A device comprising:
a first semiconductor fin, a second semiconductor fin and a third semiconductor fin over a substrate, wherein:
the first semiconductor fin and the second semiconductor fin are separated by a first isolation region; and
the second semiconductor fin and the third semiconductor fin are separated by a second isolation region, and wherein a width of the first isolation region is at least two times greater than a width of the second isolation region.

2 . The device of claim 1 , wherein:
the substrate is of a first crystal orientation; and an upper portion of the first semiconductor fin is of a second crystal orientation different from the first crystal orientation.

3 . The device of claim 2 , wherein:
the first crystal orientation is a <001> crystal orientation; and the second crystal orientation is a <111> crystal orientation.

4 . The device of claim 1 , wherein:
the first isolation region includes a first portion, a second portion and a third portion, wherein the second portion of the first isolation region is between and in contact with the first portion and the third portion of the first isolation region.

5 . The device of claim 4 , wherein:
the first portion of the first isolation region is formed of a first dielectric material; the second portion of the first isolation region is formed of a second dielectric material, wherein the second dielectric material is different from the first dielectric material; and the third portion of the first isolation region is formed of the first dielectric material.

6 . The device of claim 5 , wherein:
the first dielectric material is oxide; and the second dielectric material is nitride.

7 . The device of claim 5 , wherein:
a width of the first portion of the first isolation region is equal to a width of the third portion of the first isolation region; and the second portion of the first isolation region is of the same dimensions as the first semiconductor fin.

8 . The device of claim 5 , wherein:
the first portion, the second portion and the third portion of the first isolation region are formed of a same material.

9 . The device of claim 1 , wherein:
the first isolation region and the second isolation region are formed of oxide.

10 . An apparatus comprising:
a first semiconductor fin, a second semiconductor fin and a third semiconductor fin over a substrate, wherein:
the first semiconductor fin and the second semiconductor fin are separated by a first isolation region; and
the second semiconductor fin and the third semiconductor fin are separated by a second isolation region, and wherein a width of the first isolation region is greater than a width of the second isolation region.

11 . The apparatus of claim 10 , wherein:
the first isolation region comprises a first oxide region, a nitride region and a second oxide region, and wherein the nitride region is between the first oxide region and the second oxide region.

12 . The apparatus of claim 11 , wherein:
a width of the nitride region is equal to a width of the first semiconductor fin.

13 . The apparatus of claim 10 , further comprising:
the first isolation region is formed of oxide; and the second isolation region is formed of oxide.

14 . The apparatus of claim 10 , wherein:
the first semiconductor fin comprises a lower portion and an upper portion; and dislocation defects are confined in the lower portion.

15 . The apparatus of claim 14 , wherein:
a height of the first semiconductor fin is at least two times greater than a height of the lower portion of the first semiconductor fin.

16 . A device comprising:
a first semiconductor fin and a second semiconductor fin over a substrate and separated by a first isolation region; a third semiconductor fin over the substrate, wherein the third semiconductor fin and the second semiconductor fin are separated by a second isolation region; and a fourth semiconductor fin over the substrate, wherein the fourth semiconductor fin and the third semiconductor fin are separated by a third isolation region, wherein:
a width of the first isolation region is at least two times greater than a width of the second isolation region; and
a width of the third isolation region is substantially equal to the width of the second isolation region.

17 . The device of claim 16 , wherein:
the first isolation region is formed of two different dielectric materials; and the second isolation region is formed of a single dielectric material.

18 . The device of claim 16 , wherein:
the first isolation region includes a first portion, a second portion and a third portion, wherein the second portion of the first isolation region is between and in contact with the first portion and the third portion of the first isolation region, and wherein:
the first portion and the third portion of the first isolation region are formed of oxide; and
the second portion of the first isolation region is formed of nitride.

19 . The device of claim 18 , wherein:
a width of the second portion is equal to a width of the first semiconductor fin.

20 . The device of claim 16 , further comprising:
the first isolation region, the second isolation region and the third isolation region are formed of oxide.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Duriez Blandine
• Holland Martin Christopher

Classifications

• H10P14/3451

  Structure · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/36

  characterised by treatments done before the formation of the materials · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title

• H10W10/014

  using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title