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US2016336387A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016336387-A1 |
| Application number | US-201615224514-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 30, 2016 |
| Priority date | Mar 24, 2015 |
| Publication date | Nov 17, 2016 |
| Grant date | — |
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Abstract
Official abstract text for this publication.
An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method for forming an on-chip magnetic structure, the method comprising: activating a magnetic seed layer with palladium to form a layer of palladium nanoparticles on a surface of the magnetic seed layer; forming a magnetic alloy layer on the layer of palladium nanoparticles, the magnetic alloy layer comprising cobalt in a range from about 80 to about 90 at. % based on the total number of atoms of the magnetic alloy layer, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic alloy layer, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic alloy layer, and palladium substantially dispersed throughout the magnetic alloy layer. 2 . The method of claim 1 , wherein the magnetic seed layer comprises nickel and iron. 3 . The method of claim 1 , wherein the on-chip magnetic structure is an inductor. 4 . The method of claim 1 , wherein the magnetic alloy layer is amorphous. 5 . The method of claim 1 , wherein the magnetic seed layer is at least 40 nm thick. 6 . The method of claim 1 , wherein the magnetic alloy layer is magnetically stable to at least 200° C. for at least 1 hour. 7 . The method of claim 1 , wherein the cobalt is in a range from about 81 to about 86 at. %. 8 . The method of claim 1 , wherein the magnetic seed layer comprises nickel and iron.
Assignees
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Classifications
Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title
using a liquid · CPC title
Inductive arrangements or effects of, or between, wiring layers · CPC title
- H10D1/20Primary
Inductors · CPC title
Electricity · mapped topic
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- What does patent US2016336387A1 cover?
- An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of a…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D1/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Nov 17 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).