Semiconductor device with integrated mirror and method of producing a semiconductor device with integrated mirror

Patent metadata

Field	Value
Publication number	US-2016334572-A1
Application number	US-201415101406-A
Country	US
Kind code	A1
Filing date	Nov 17, 2014
Priority date	Dec 3, 2013
Publication date	Nov 17, 2016
Grant date	—

Abstract

The semiconductor device comprises a substrate (1) of semiconductor material, a dielectric layer (2) above the substrate, a waveguide (3) arranged in the dielectric layer, and a mirror region (4) arranged on a surface of a mirror support (5) integrated on the substrate. A mirror is thus formed facing the waveguide. The surface of the mirror support and hence the mirror are inclined with respect to the waveguide.

First claim

1 . A semiconductor device, comprising:
a substrate of semiconductor material; a dielectric layer above the substrate; a waveguide arranged in the dielectric layer; a mirror support arranged level with the waveguide, the mirror support comprising a surface that is inclined with respect to the waveguide; the mirror support being a high-density plasma deposited oxide; and a mirror region being arranged on the surface of the mirror support, the mirror region forming a mirror facing the waveguide and being inclined with respect to the waveguide.

2 . The semiconductor device of claim 1 , wherein the mirror region is a mirror layer arranged conformal with the surface of the mirror support.

3 . The semiconductor device of claim 2 , wherein the mirror layer is gold, silver, copper, aluminum or TiN.

4 . The semiconductor device of claim 1 , wherein the mirror region is a filling of an opening of the dielectric layer, the filling comprising a higher index of refraction than the mirror support.

5 . The semiconductor device of claim 4 , wherein the mirror support is a silicon oxide and the filling is silicon.

6 . The semiconductor device of claim 1 , wherein the surface of the mirror support is arranged at an angle between 40° and 50° with respect to the waveguide.

7 . The semiconductor device of claim 1 , further comprising:
a further surface of the mirror support, the mirror region forming a further mirror on the further surface, the mirror support being arranged between parts of the waveguide facing the mirror and the further mirror, respectively.

8 . The semiconductor device of claim 7 , wherein the surface and the further surface of the mirror support are planar and form an angle between 80° and 100°.

9 . A method of producing a semiconductor device, comprising:
arranging a waveguide in a dielectric layer on a substrate of semiconductor material; forming an opening in the dielectric layer; forming a mirror support by a high-density plasma deposition of oxide in the opening, the mirror support comprising a surface that is inclined with respect to the waveguide; and arranging a mirror region on the surface of the mirror support, thus forming a mirror.

10 . The method according to claim 9 , wherein the mirror support is formed by a high-density plasma deposition of silicon oxide.

11 . The method according to claim 9 , wherein a thinned layer portion of the dielectric layer is left in the opening, and the mirror support is formed on surfaces of the thinned layer portion.

12 . The method according to claim 11 , wherein a recess is formed in the substrate adjacent to the thinned layer portion of the dielectric layer, and the mirror support is partially arranged within the recess.

13 . The method according to claim 9 , further comprising:
forming a sacrificial layer after forming the mirror support, the sacrificial layer not covering an area provided for the mirror region; forming the mirror region as a mirror layer; applying a reflective layer on the sacrificial layer and on the area provided for the mirror region; and removing the sacrificial layer, the mirror layer thus being formed by a remaining portion of the reflective layer.

14 . The method according to claim 9 , further comprising:
after forming the mirror support, forming the mirror region by an epitaxial growth of silicon, thus covering the inclined surface of the mirror support and filling the opening.

15 . The method according to claim 9 , further comprising:
after forming the mirror support, forming the mirror region by a deposition of polysilicon on the surface of the mirror support, thus filling the opening.

Assignees

• Ams Ag

Inventors

• Kraft Jochen
• Siegert Joerg
• Stueckler Ewald

Classifications

• G02B6/132

  by deposition of thin films · CPC title

• G02B2006/12104

  Mirror; Reflectors or the like · CPC title

• G02B6/122 Primary

  Basic optical elements, e.g. light-guiding paths · CPC title

• G02B6/136

  by etching · CPC title

• G02B6/12004

  Combinations of two or more optical elements · CPC title