System and method for substrate wafer back side and edge cross section seals
US-9230810-B2 · Jan 5, 2016 · US
Method for producing a semiconductor device
US2016329404A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016329404-A1 |
| Application number | US-201615213565-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jul 19, 2016 |
| Priority date | Aug 7, 2014 |
| Publication date | Nov 10, 2016 |
| Grant date | — |
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Abstract
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A method for producing a semiconductor device includes depositing an oxide film containing an impurity having a first conductivity type on a substrate. A nitride film is deposited and a first oxide film is deposited that contains an impurity having a second conductivity type that differs from the first conductivity type. The first oxide film, the nitride film, and the second oxide film are etched to form a contact hole. An epitaxial growth process is carried out form a first pillar-shaped silicon layer in the contact hole. The nitride film is removed and epitaxial growth process is performed to form an output terminal.
First claim
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1 . A method for producing a semiconductor device, the method comprising: depositing a first oxide film containing an impurity having a first conductivity type on a substrate; depositing a nitride film; depositing a second oxide film containing an impurity having a second conductivity type that differs from the first conductivity type; etching the first oxide film containing the impurity having a first conductivity type, the nitride film, and the second oxide film containing the impurity having the second conductivity type to form a contact hole; performing epitaxial growth in the contact hole to form a first pillar-shaped silicon layer; and removing the nitride film and performing epitaxial growth to form an output terminal. 2 . A method for producing a semiconductor device, the method comprising depositing a first oxide film containing an impurity having a first conductivity type on a substrate; depositing a nitride film; depositing a second oxide film containing an impurity having a second conductivity type that differs from the first conductivity type; etching the first oxide film containing the impurity having the first conductivity type, the nitride film, and the second oxide film containing the impurity having the second conductivity type to form a contact hole; performing epitaxial growth in the contact hole to form a first pillar-shaped silicon layer; removing the nitride film and performing epitaxial growth to form an output terminal; and performing a heat treatment after performing the epitaxial growth to form a second first-conductivity-type semiconductor layer and a first second- conductivity-type semiconductor layer in the first pillar-shaped silicon layer and the output terminal.
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Classifications
for altering the shape of semiconductors, e.g. smoothing the surface · CPC title
Thermal treatments, e.g. annealing or sintering · CPC title
by chemical means · CPC title
of inorganic materials · CPC title
Structure · CPC title
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- What does patent US2016329404A1 cover?
- A method for producing a semiconductor device includes depositing an oxide film containing an impurity having a first conductivity type on a substrate. A nitride film is deposited and a first oxide film is deposited that contains an impurity having a second conductivity type that differs from the first conductivity type. The first oxide film, the nitride film, and the second oxide film are etch…
- Who is the assignee on this patent?
- Unisantis Elect Singapore Pte
- What technology area does this patent fall under?
- Primary CPC classification H10D64/035. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Nov 10 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).