Power semiconductor device

Patent metadata

Field	Value
Publication number	US-2016315022-A1
Application number	US-201414655962-A
Country	US
Kind code	A1
Filing date	Feb 13, 2014
Priority date	Feb 26, 2013
Publication date	Oct 27, 2016
Grant date	—

Abstract

This invention is provided with: a circuit board which is placed in a package and in which an electric circuit including a power semiconductor element is formed; and a plurality of press-fit terminals each having a wire-bond portion electrically connected in the package to the electric circuit, a press-fit portion for making electrical connection with an apparatus to be connected, and a body portion whose one end portion continuous to the wire bond portion is internally fastened to the package and whose other end portion supports the press-fit portion so as to place the press-fit portion away from the package; wherein in each of the plurality of press-fit terminals, at a portion in the body portion exposed from the package, there is formed a constriction portion that is constricted from both sides in a direction perpendicular to the center line, so as to leave a portion around the center line.

First claim

1 . A power semiconductor device, comprising:
a housing; a circuit board which is placed in the housing and in which an electric circuit including a power semiconductor element is formed; a plurality of terminals each having an inner terminal portion electrically connected in the housing to the electric circuit, an outer terminal portion for making electrical connection with an apparatus to be connected, and a body portion whose one end continuous to the inner terminal portion is fastened internally to the housing and which supports the outer terminal portion at the other end so as to place the outer terminal portion away from the housing; wherein, in each of the plurality of terminals, at a portion in the body portion exposed from the housing, there is formed a constriction portion that is concaved from both sides in a direction perpendicular to a center line that connects the outer terminal portion and a root portion in the portion exposed from the housing, so as to leave a portion around the center line.

2 . The power semiconductor device according to claim 1 , wherein the plurality of terminals is each formed of an elongated plate member, and the constriction portion is constricted from both sides of the plate member in its width direction.

3 . The power semiconductor device according to claim 2 , wherein in each of the plurality of terminals, the outer terminal portion is formed in a doubly supported beam structure in which its branched portions in the width direction are facing to each other with a gap therebetween, and wherein a width of the constriction portion is narrower than a width of each of the branched portions of the outer terminal portion.

4 . The power semiconductor device according to claim 2 , wherein the plurality of respective terminals are disposed along a width direction of the plate member at a portion in the body portion fastened internally to the housing, and wherein, in the portion exposed from the housing, a portion beyond the constriction portion is tilted relative to said width direction.

5 . The power semiconductor device according to claim 4 , wherein in each of the plurality of terminals, the constriction portion is partly embedded in the housing.

6 . The power semiconductor device according to claim 1 , wherein in each of the plurality of terminals, a plurality of constriction portions, each being said constriction portion, are formed in different positions along the center line.

7 . The power semiconductor device according to claim 6 , wherein in the thus-formed plurality of constriction portions, a width of the constriction portion farther to the outer terminal portion is wider than a width of the constriction portion nearer thereto.

8 . The power semiconductor device according to claim 1 , wherein the respective outer terminal portions of the plurality of terminals are arranged in the housing.

9 . The power semiconductor device according to claim 1 , wherein the power semiconductor element is formed of a wide bandgap semiconductor material.

10 . The power semiconductor device according to claim 9 , wherein the wide bandgap semiconductor material is silicon carbide, a gallium nitride family material or diamond.

11 . The power semiconductor device according to claim 3 , wherein the plurality of respective terminals are disposed along a width direction of the plate member at a portion in the body portion fastened internally to the housing, and wherein, in the portion exposed from the housing, a portion beyond the constriction portion is tilted relative to said width direction.

12 . The power semiconductor device according to claim 11 , wherein in each of the plurality of terminals, the constriction portion is partly embedded in the housing.

13 . The power semiconductor device according to claim 2 , wherein in each of the plurality of terminals, a plurality of constriction portions, each being said constriction portion, are formed in different positions along the center line.

14 . The power semiconductor device according to claim 13 , wherein in the thus-formed plurality of constriction portions, a width of the constriction portion farther to the outer terminal portion is wider than a width of the constriction portion nearer thereto.

15 . The power semiconductor device according to claim 2 , wherein the respective outer terminal portions of the plurality of terminals are arranged in the housing.

16 . The power semiconductor device according to claim 2 , wherein the power semiconductor element is formed of a wide bandgap semiconductor material.

17 . The power semiconductor device according to claim 16 , wherein the wide bandgap semiconductor material is silicon carbide, a gallium nitride family material or diamond.

Assignees

• Mitsubishi Electric Corp
• Mitsubishi Electric Corp

Inventors

• Egusa Minoru
• Shige Kazuyoshi

Classifications

• H10W72/5524

  comprising aluminium [Al] · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title