Semiconductor device

Patent metadata

Field	Value
Publication number	US-2016233146-A1
Application number	US-201615092069-A
Country	US
Kind code	A1
Filing date	Apr 6, 2016
Priority date	Apr 1, 2014
Publication date	Aug 11, 2016
Grant date	—

Abstract

A semiconductor device includes an insulating substrate having an insulating plate formed of ceramic and a circuit plate fixed on a main face of the insulating plate; a semiconductor element fixed on the circuit plate; a printed circuit board disposed to face the main face of the insulating plate; a ceramic plate disposed to face the main face of the insulating plate, and arranged at a position away from the main face of the insulating plate further than the printed circuit board; a supporting member fixed to the main face of the insulating plate or to the circuit plate, to fix a position of the ceramic plate; and a resin covering the circuit plate, the semiconductor element, the printed circuit board, and the ceramic plate.

First claim

What is claimed is:

1 . A semiconductor device comprising:
an insulating substrate having an insulating plate formed of ceramic and a circuit plate fixed on a main face of the insulating plate; a semiconductor element fixed on the circuit plate; a printed circuit board disposed to face the main face of the insulating plate; a ceramic plate disposed to face the main face of the insulating plate, and arranged at a position away from the main face of the insulating plate further than the printed circuit board; a supporting member fixed to the main face of the insulating plate or to the circuit plate, to fix the position of the ceramic plate; and a resin covering the circuit plate, the semiconductor element, the printed circuit board, and the ceramic plate.

2 . The semiconductor device according to claim 1 , wherein the supporting member is an external connection terminal fixed to the circuit plate.

3 . The semiconductor device according to claim 2 , wherein the external connection terminal has a protrusion fixing the ceramic plate.

4 . The semiconductor device according to claim 1 , wherein the resin has a first face forming substantially a same plane with the insulating substrate, and a second face parallel to the first face, and a ratio between a distance from the ceramic plate to the second face and a distance from the insulating plate to the first face is 1 to 5.

5 . The semiconductor device according to claim 1 , wherein the ceramic plate is composed of a material having a same linear expansion coefficient as the insulating plate.

6 . The semiconductor device according to claim 1 , wherein the resin is a thermosetting resin composed of at least one material selected from a group consisting of an epoxy-resin, a polyimide-resin, a silicone-resin, a phenol-resin, and an amino-resin.

7 . The semiconductor device according to claim 1 , further comprising a conductive post connected electrically and mechanically to the semiconductor element and the printed circuit board.

8 . The semiconductor device according to claim 1 , wherein the ceramic plate includes a hole in which the resin flows.

9 . The semiconductor device according to claim 1 , wherein the ceramic plate includes a conductive layer.

10 . The semiconductor device according to claim 1 , wherein the ceramic plate is a single plate.

Assignees

• Fuji Electric Co Ltd

Inventors

• Nakamura Hideyo

Classifications

• H10W76/15

  Containers comprising an insulating or insulated base · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W90/401

  characterised by multiple insulating or insulated package substrates, interposers or RDLs · CPC title

• H10W90/00

  Package configurations · CPC title