Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device

US2016308111A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016308111-A1
Application numberUS-201615198103-A
CountryUS
Kind codeA1
Filing dateJun 30, 2016
Priority dateSep 6, 2010
Publication dateOct 20, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

A piezoelectric film element includes a substrate, and a piezoelectric film including an alkali niobate-based perovskite structure expressed in a composition formula (K 1-x Na x )NbO 3 (0.4≦x≦0.7) formed on the substrate, the piezoelectric film including an etching cross section including a tapered inclined portion which is enlarged toward an outside. The inclined portion includes a slope angle made by a slope connecting an upper surface edge and a bottom surface edge of the piezoelectric film and a bottom surface of the piezoelectric film, and the slope angle is not greater than 70°.

First claim

Opening claim text (preview).

What is claimed is: 1 . A piezoelectric film element, comprising: a substrate; and a piezoelectric film comprising an alkali niobate-based perovskite structure expressed in a composition formula (K 1-x Na x )NbO 3 (0.4≦x≦0.7) formed on the substrate, the piezoelectric film comprising an etching cross section including a tapered inclined portion which is enlarged toward an outside, wherein the inclined portion includes a slope angle made by a slope connecting an upper surface edge and a bottom surface edge of the piezoelectric film and a bottom surface of the piezoelectric film, and the slope angle is not greater than 70°. 2 . The piezoelectric film element according to claim 1 , wherein the slope angle is greater than 45° and not greater than 70°. 3 . The piezoelectric film wafer according to claim 1 , wherein a surface of the inclined portion comprises a fluorine compound. 4 . A piezoelectric film device, comprising: a substrate; a piezoelectric film comprising an alkali niobate-based perovskite structure expressed in a composition formula (K 1-x Na x )NbO 3 (0.4≦x≦0.7) formed on the substrate, the piezoelectric film comprising an etching cross section including a tapered inclined portion which is enlarged toward an outside; a lower electrode provided between the substrate and the piezoelectric film; an upper electrode provided on the piezoelectric film; and a voltage applying unit or a voltage detecting unit connected to the upper and lower electrodes, wherein the inclined portion includes a slope angle made by a slope connecting an upper surface edge and a bottom surface edge of the piezoelectric film and a bottom surface of the piezoelectric film, and the slope angle is not greater than 70°.

Assignees

Inventors

Classifications

  • Electricity · mapped topic

  • Electricity · mapped topic

  • Electricity · mapped topic

  • by sol-gel deposition · CPC title

  • by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing · CPC title

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What does patent US2016308111A1 cover?
A piezoelectric film element includes a substrate, and a piezoelectric film including an alkali niobate-based perovskite structure expressed in a composition formula (K 1-x Na x )NbO 3 (0.4≦x≦0.7) formed on the substrate, the piezoelectric film including an etching cross section including a tapered inclined portion which is enlarged toward an outside. The inclined portion includes a slope angl…
Who is the assignee on this patent?
Sumitomo Chemical Co
What technology area does this patent fall under?
Primary CPC classification H01L41/0805. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Oct 20 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).