Control of impedance of rf delivery path

Patent metadata

Field	Value
Publication number	US-2016307738-A1
Application number	US-201615194452-A
Country	US
Kind code	A1
Filing date	Jun 27, 2016
Priority date	Oct 1, 2013
Publication date	Oct 20, 2016
Grant date	—

Abstract

A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

First claim

1 . A plasma system comprising:
a controller configured to generate a signal indicating a tuning parameter associated with a measurable factor, wherein the measurable factor is used to process a substrate when present within a plasma chamber; and a filter in communication with the controller for changing an impedance of a portion of an radio frequency (RF) supply path based on the tuning parameter, wherein the filter is coupled to the portion of the RF supply path between an impedance matching circuit and an electrode of the plasma chamber.

2 . The plasma system of claim 1 , wherein one end of the filter is coupled to the portion of the RF supply path and another end of the filter is coupled to ground.

3 . The plasma system of claim 1 , wherein the filter includes a variable capacitor, or a variable inductor, or a combination thereof.

4 . The plasma system of claim 1 , wherein the RF supply path is located between an RF generator and the electrode, wherein the RF supply path extends via an RF cable coupling the RF generator to the impedance matching circuit, the impedance matching circuit, an RF connection coupled to the impedance matching circuit, an RF rod coupled to the RF connection, and an RF cylinder coupled to the RF rod.

5 . The plasma system of claim 1 , wherein the tuning parameter is a capacitance of the filter or an inductance of the filter.

6 . The plasma system of claim 1 , wherein the measurable factor is an etch rate of etching the substrate, or a deposition rate of depositing materials on the substrate, or a uniformity in the etch rate, or a uniformity in the deposition rate.

7 . The plasma system of claim 1 , wherein the process is of etching the substrate or of depositing materials on the substrate, wherein the electrode is a lower electrode of the plasma chamber.

9 . A method comprising:
generating a signal indicating a tuning parameter associated with a measurable factor, wherein the measurable factor is used to process a substrate when present within a plasma chamber; and changing an impedance of a portion of an radio frequency (RF) supply path based on the tuning parameter, wherein the filter is coupled to the portion of the RF supply path between an impedance matching circuit and an electrode of the plasma chamber.

10 . The method of claim 9 , wherein one end of the filter is coupled to the portion of the RF supply path and another end of the filter is coupled to ground.

11 . The method of claim 9 , wherein the filter includes a variable capacitor, or a variable inductor, or a combination thereof.

12 . The method of claim 9 , wherein the RF supply path is located between an RF generator and the electrode, wherein the RF supply path extends via an RF cable coupling the RF generator to the impedance matching circuit, the impedance matching circuit, an RF connection coupled to the impedance matching circuit, an RF rod coupled to the RF connection, and an RF cylinder coupled to the RF rod.

13 . The method of claim 9 , wherein the tuning parameter is a capacitance of the filter or an inductance of the filter.

14 . The method of claim 9 , wherein the measurable factor is an etch rate of etching the substrate, or a deposition rate of depositing materials on the substrate, or a uniformity in the etch rate, or a uniformity in the deposition rate.

15 . The method of claim 9 , wherein the process is of etching the substrate or of depositing materials on the substrate, wherein the electrode is a lower electrode of the plasma chamber.

16 . The method of claim 9 , further comprising:
generating a drive signal upon receiving the tuning parameter; performing a motion based on the drive signal, wherein changing the impedance is performed in response to the motion.

17 . A plasma system comprising:
a controller configured to generate a signal indicating a tuning parameter associated with a measurable factor, wherein the measurable factor is used to process a substrate when present within a plasma chamber; a driver coupled to the controller for receiving the tuning parameter, wherein the driver is configured to generate a drive signal upon receiving the tuning parameter; a movement mechanism coupled to the driver for receiving the drive signal and configured to perform a motion based on the drive signal; and a filter coupled to the movement mechanism for changing an impedance of a portion of an radio frequency (RF) supply path in response to the motion, wherein the filter is coupled to the portion of the RF supply path between an impedance matching circuit and an electrode of the plasma chamber.

18 . The plasma system of claim 17 , wherein one end of the filter is coupled to the portion of the RF supply path and another end of the filter is coupled to ground.

19 . The plasma system of claim 17 , wherein the filter includes a variable capacitor, or a variable inductor, or a combination thereof.

20 . The plasma system of claim 17 , wherein the RF supply path is located between an RF generator and the electrode, wherein the RF supply path extends via an RF cable coupling the RF generator to the impedance matching circuit, the impedance matching circuit, an RF connection coupled to the impedance matching circuit, an RF rod coupled to the RF connection, and an RF cylinder coupled to the RF rod.

Assignees

• Lam Res Corp

Inventors

• Marakhtanov Alexei
• Dhindsa Rajinder
• Lucchesi Ken
• Albarede Luc

Classifications

• H01J37/32908

  Utilities · CPC title

• H01J37/32532

  Electrodes · CPC title

• H01J37/32807

  Construction (includes replacing parts of the apparatus) · CPC title

• H01J37/32174

  Circuits specially adapted for controlling the RF discharge · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title