Semiconductor device testing apparatus, semiconductor device testing method, and semiconductor device manufacturing method

Patent metadata

Field	Value
Publication number	US-2016306005-A1
Application number	US-201615195478-A
Country	US
Kind code	A1
Filing date	Jun 28, 2016
Priority date	Aug 21, 2014
Publication date	Oct 20, 2016
Grant date	—

Abstract

A semiconductor device testing apparatus according to an embodiment includes: a first terminal and a second terminal that apply voltage to a semiconductor device; and a light source that irradiates the semiconductor device with ultraviolet light.

First claim

What is claimed is:

1 . A semiconductor device testing method comprising:
irradiating a semiconductor device with ultraviolet light, the semiconductor device including a capacitor formed with a semiconductor layer, an insulating film provided on the semiconductor layer, and an electrode provided on the insulating film; and applying voltage between the semiconductor layer and the electrode under a first condition that the electrode has a negative voltage when the semiconductor layer is an n-type semiconductor, and the electrode has a positive voltage when the semiconductor layer is a p-type semiconductor, the semiconductor device being irradiated with the ultraviolet light during the applying.

2 . The method according to claim 1 , wherein the ultraviolet light has a higher energy than a band gap of the semiconductor layer.

3 . The method according to claim 1 , wherein the semiconductor layer is a wide bandgap semiconductor.

4 . The method according to claim 1 , wherein, after an electrical stress is applied to the insulating film through the application of the voltage between the semiconductor layer and the electrode under the first condition, voltage is applied between the semiconductor layer and the electrode under a second condition, and electrical characteristics of the capacitor are evaluated.

5 . The method according to claim 4 , wherein, when the electrical characteristics of the capacitor are evaluated, the ultraviolet irradiation to the semiconductor device is stopped.

6 . The method according to claim 1 , wherein the semiconductor layer is silicon carbide.

7 . The method according to claim 1 , wherein ultraviolet light are irradiated to the capacitor from electrode side.

8 . The method according to claim 4 , wherein, when the electrical characteristics of the capacitor are evaluated, variation in flat band voltage of the capacitor from prior to application of the electrical stress is evaluated, and a defect is detected when the variation exceeds a predetermined value.

9 . The method according to claim 4 , wherein, when the electrical characteristics of the capacitor are evaluated, leakage current of the capacitor is measured, and a defect is detected when the leakage current exceeds a predetermined value.

10 . The method according to claim 4 , wherein an absolute value of the voltage to be applied between the semiconductor layer and the electrode under the second condition is lower than that under the first condition.

Assignees

• Toshiba Kk

Inventors

• Ohashi Teruyuki
• Lljima Ryosuke

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D1/66

  Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors · CPC title

• H01L22/14

  Electricity · mapped topic

• H01L29/1608

  Electricity · mapped topic