Silicon Based Ion Emitter Assembly

Patent metadata

Field	Value
Publication number	US-2016302292-A1
Application number	US-201615178448-A
Country	US
Kind code	A1
Filing date	Jun 9, 2016
Priority date	Jun 18, 2008
Publication date	Oct 13, 2016
Grant date	—

Abstract

An embodiment of the invention provides a method for low emission charge neutralization, comprising: generating a high frequency alternating current (AC) voltage; transmitting the high frequency AC voltage to at least one non-metallic emitter; wherein the at least one non-metallic emitter comprises at least 70% silicon by weight and less than 99.99% silicon by weight; wherein the at least one emitter comprises at least one treated surface section with a destroyed oxidation layer; and generating ions from the at least one non-metallic emitter in response to the high frequency AC voltage. Another embodiment of the invention provides an apparatus for low emission charge neutralization wherein the apparatus can perform the above-described operations.

First claim

1 . A method for low emission charge neutralization, comprising:
generating an alternating current (AC) and a high voltage; transmitting the high voltage to at least one point type silicon based non-metallic ion emitter configured with a tip, a taper, a shaft, and a tail; wherein the taper is between the tip and the shaft; wherein the shaft is between the taper and the tail; wherein the high voltage and alternating current is in a high frequency range of 1 kilohertz to 100 kilohertz; wherein the at least one point type silicon based non-metallic ion emitter comprises more than 72.00% silicon by weight and less than 99.99% silicon by weight; wherein the at least one point type silicon based non-metallic ion emitter comprises at least a portion of treated surface of the shaft or/and tail with an increased surface conductivity or a lower electrical resistance; and generating ions from the tip of the emitter in response to a contact of the treated surface of the shaft or/and tail of the emitter to the high voltage and the alternating current in the high frequency range.

2 . The method of claim 1 , wherein the portion of treated surface of the shaft or/and tail of the at least one point type silicon based non-metallic ion emitter comprises an area with a preselected roughness in a range of 0.5 micron to 10 microns due to abrasive or sanding processing.

3 . The method of claim 1 , wherein the portion of treated surface of the shaft or/and tail of the at least one point type silicon based non-metallic ion emitter comprises a metallic plating or metallic coating.

4 . The method of claim 1 , further comprising:
providing a measuring device for monitoring a surface or/and volume electrical resistance and composition of the at least one point type silicon based non-metallic ion emitter.

5 . The method of claim 1 , wherein the shaft of the emitter comprising a silicon based section and a metal electrode are inserted into a spring type sleeve.

6 . (canceled)

7 . The method of claim 1 , further comprising:
performing a plasma cleaning of the at least one point type silicon based non-metallic ion emitter during a start up period of a corona plasma ionization generated by a voltage/power waveform comprising short duration pulses bursts with an amplitude that is 25% to 100% higher than a voltage/power waveform during a normal (operational) period.

8 . The method of claim 1 wherein to minimize particle emission by the ion emitter, applying to the ion emitter a corona discharge voltage waveform with a minimum onset HF voltage amplitude and/or a lower duty factor during an operational period.

9 . The method of claim 1 ,
wherein the at least one point type silicon based non-metallic ion emitter comprises an assembly of a non-metallic part/portion and a metallic part/portion; wherein the metallic part/portion is constructed as a compressing spring sleeve positioned on the shaft of the non-metallic ion emitter; wherein the assembly comprises a first ratio S/D in a range from approximately 0.03 to 0.06; wherein S is a thickness of the sleeve that receives the at least one point type silicon based non-metallic ion emitter; and wherein D is a diameter of the shaft of the at least one point type silicon based non-metallic ion emitter.

10 . The method of claim 1 ,
wherein the at least one point type silicon based non-metallic ion emitter comprises a second ratio L/S in the range (2−5)/[tan {tangent}(0.5α)]; wherein L is a length of an exposed portion of a shaft of the at least one point type silicon based non-metallic ion emitter; wherein S is a thickness of a sleeve that receives the at least one point type silicon based non-metallic ion emitter; and wherein α is an angle of a taper of a tapered portion of the shaft of the at least one point type silicon based non-metallic ion emitter.

11 . An apparatus for low emission charge neutralization, comprising:
at least one point type silicon based non-metallic ion emitter configured with a tip, a taper, a shaft, and a tail; wherein the taper is between the tip and the shaft; wherein the shaft is between the taper and the tail; wherein the at least one point type silicon based non-metallic ion emitter comprises more than 72.00% silicon by weight and less than 99.99% silicon by weight; wherein the at least one point type silicon based non-metallic ion emitter comprises at least a portion of treated surface of the shaft or/and tail with an increased surface conductivity or a lower electrical resistance; and wherein the tip of the emitter generates ions in response to a contact of the treated surface of the shaft or/and tail of the emitter to a high voltage and an alternating current (AC) in a high frequency range of 1 kilohertz to 100 kilohertz.

12 . The apparatus of claim 11 , wherein the portion of treated surface of the shaft or/and tail of the at least one point type silicon based non-metallic ion emitter comprises an area with a preselected roughness in a range of 0.5 micron to 10 microns due to abrasive or sanding processing.

13 . The apparatus of claim 11 , wherein the portion of treated surface of the shaft or/and tail of the at least one point type silicon based non-metallic ion emitter comprises metallic plating or metallic coating.

14 . The apparatus of claim 11 , wherein a surface or/and volume electrical resistance and composition of the at least one point type silicon based non-metallic ion emitter is monitored.

15 . The apparatus of claim 11 , wherein the shaft of the emitter comprising a silicon based section and a metal electrode are inserted into a spring type sleeve.

16 . (canceled)

17 . The apparatus of claim 11 , wherein a soft plasma cleaning of the at least one point type silicon based non-metallic ion emitter is performed during a start up period of a corona plasma ionization generated by a voltage/power waveform comprising short duration pulses bursts with an amplitude that is 25% to 100% higher than a voltage/power waveform during a normal (operational) period.

18 . The apparatus of claim 11 wherein to minimize particle emission by the ion emitter, a corona discharge voltage waveform with a minimum onset HF voltage amplitude and/or a lower duty factor is applied to the ion emitter during an operational period.

19 . The apparatus of claim 11 ,
wherein the at least one point type silicon based non-metallic ion emitter comprises an assembly of a non-metallic part/portion and a metallic part/portion; wherein the metallic part/portion is constructed as a compressing spring sleeve positioned on the shaft of the non-metallic ion emitter; wherein the assembly comprises a first ratio S/D in a range from approximately 0.03 to 0.06; wherein S is a thickness of the sleeve that receives the at least one point type silicon based non-metallic ion emitter; and wherein D is a diameter of the shaft of the at least one point type silicon based non-metallic ion emitter.

20 . The apparatus of claim 11 ,
wherein the at least one point type silicon based non-metallic ion emitter comprises a second ratio L/S in the range (2−5)/[tan {tangent}(0.5α)]; wherein L is a length of an exposed portion of a shaft of the at least one point type silicon based non-metallic ion emitter; wherein S is a thickness of a sleeve that receives the at least one point type silicon based non-metallic ion emitter; and wherein α is an angle of a taper of a tapered portion of the shaft of the at least one point type silicon based non-metallic ion emitter.

Assignees

• Illinois Tool Works

Inventors

• Gefter Peter
• Klochkov Aleksey

Classifications

• H10F19/80

  Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells · CPC title

• H05F3/04 Primary

  by means of spark gaps or other discharge devices (devices providing for corona discharge per se H01T19/00) · CPC title

• B32B2255/06

  on metal layer · CPC title

• B32B15/082

  comprising vinyl resins; comprising acrylic resins · CPC title

• B32B2270/00

  Resin or rubber layer containing a blend of at least two different polymers · CPC title