Apparatuses, systems, and methods for error correction
US-2024386983-A1 · Nov 21, 2024 · US
US2016295152A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016295152-A1 |
| Application number | US-201615083716-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 29, 2016 |
| Priority date | Apr 3, 2015 |
| Publication date | Oct 6, 2016 |
| Grant date | — |
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A transmitter device is provided. The transmitter device includes first to m-th memory cells (m is an integer of 2 or more), first to m-th word lines, a first bit line, and an analog circuit. The i-th word line (i is an integer greater than or equal to 1 and less than or equal to m) is electrically connected to the i-th memory cell. The first to m-th memory cells are electrically connected to the analog circuit through the first bit line. The first to m-th memory cells are capable of retaining a potential corresponding to first data. The first to m-th word lines are supplied with a potential corresponding to second data. The analog circuit is capable of performing a multiply-accumulate operation on the first data and the second data, and the first data or the second data includes image data.
Opening claim text (preview).
1 . A transmitter device comprising: first to m-th memory cells (m is an integer of 2 or more); first to m-th word lines; a first bit line; and an analog circuit, wherein the i-th word line (i is an integer greater than or equal to 1 and less than or equal to m) is electrically connected to the i-th memory cell, wherein the first to m-th memory cells are electrically connected to the analog circuit through the first bit line, wherein the first to m-th memory cells are capable of retaining a potential corresponding to first data, wherein the first to m-th word lines are supplied with a potential corresponding to second data, wherein the analog circuit is capable of performing a multiply-accumulate operation on the first data and the second data, and wherein the first data or the second data includes image data. 2 . The transmitter device according to claim 1 , further comprising: (m+1)-th to (m+m)-th memory cells; and a second bit line, wherein the analog circuit comprises a first circuit and a second circuit, wherein the (m+i)-th memory cell is electrically connected to the i-th word line, wherein the first circuit is electrically connected to the first bit line, wherein the second circuit is electrically connected to the (m+1)-th to (m+m)-th memory cells through the second bit line, and wherein the first circuit is electrically connected to the second circuit through a current mirror circuit. 3 . The transmitter device according to claim 1 , further comprising a third bit line, wherein the i-th memory cell comprises: a capacitor; a first transistor; and a second transistor, wherein a first terminal of the capacitor is electrically connected to a gate of the first transistor, wherein a second terminal of the capacitor is electrically connected to the i-th word line, wherein the third bit line is electrically connected to the gate of the first transistor through the second transistor, wherein one of a source and a drain of the first transistor is electrically connected to the first bit line, and wherein the second transistor comprises a channel formation region comprising an oxide semiconductor. 4 . A receiver device comprising: first to m-th memory cells (m is an integer of 2 or more); first to m-th word lines; a first bit line; and an analog circuit, wherein the i-th word line (i is an integer greater than or equal to 1 and less than or equal to m) is electrically connected to the i-th memory cell, wherein the first to m-th memory cells are electrically connected to the analog circuit through the first bit line, wherein the first to m-th memory cells are capable of retaining a potential corresponding to first data, wherein the first to m-th word lines are supplied with a potential corresponding to second data, wherein the analog circuit is capable of performing a multiply-accumulate operation on the first data and the second data, and wherein the first data or the second data includes image data. 5 . The receiver device according to claim 4 , further comprising: (m+1)-th to (m+m)-th memory cells; and a second bit line, wherein the analog circuit comprises a first circuit and a second circuit, wherein the (m+i)-th memory cell is electrically connected to the i-th word line, wherein the first circuit is electrically connected to the first bit line, wherein the second circuit is electrically connected to the (m+1)-th to (m+m)-th memory cells through the second bit line, and wherein the first circuit is electrically connected to the second circuit through a current mirror circuit. 6 . The receiver device according to claim 4 , further comprising a third bit line, wherein the i-th memory cell comprises: a capacitor; a first transistor; and a second transistor, wherein a first terminal of the capacitor is electrically connected to a gate of the first transistor, wherein a second terminal of the capacitor is electrically connected to the i-th word line, wherein the third bit line is electrically connected to the gate of the first transistor through the second transistor, wherein one of a source and a drain of the first transistor is electrically connected to the first bit line, and wherein the second transistor comprises a channel formation region comprising an oxide semiconductor. 7 . An electronic device comprising: the receiver device according to claim 4 ; and a microphone, a speaker, a display portion, or an operation key. 8 . (canceled)
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