Photoelectric conversion device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-2016293874-A1
Application number	US-201615079562-A
Country	US
Kind code	A1
Filing date	Mar 24, 2016
Priority date	Mar 30, 2015
Publication date	Oct 6, 2016
Grant date	—

Abstract

A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.
R 1 —(CH 2 ) n —R 2   (1)

Here, n: 1 to 20, and R1, R2: halogen or SH

First claim

What is claimed is:

1 . A method of manufacturing a photoelectric conversion device, comprising:
forming a layer containing a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1) on a substrate; and drying the layer under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.
R 1 —(CH 2 ) n —R 2   (1)

n: 1 to 20 R1, R2: halogen or SH

2 . The method of claim 1 ,
wherein the pressures are 1×10 −3 Pa or less and the temperatures are 40 to 160° C.

3 . The method of claim 1 ,
wherein: the dried layer has a microphase-separated structure of the p-type semiconductor and the n-type semiconductor; the p-type semiconductor has a polymer; and the n-type semiconductor has a fullerene derivative.

4 . The method of claim 1 ,
wherein the compound is 1,8-diiodooctane.

5 . A photoelectric conversion device, comprising:
a first electrode layer; a second electrode layer; and a photoelectric conversion layer disposed between the first and second electrode layers and including an organic active layer, the organic active layer containing a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1), and a concentration of the compound being 0.001 mass % or more to less than 0.1 mass %.
R 1 —(CH 2 ) n —R 2   (1)

n: 1 to 20 R1, R2: halogen or SH

6 . The photoelectric conversion device of claim 5 ,
wherein the photoelectric conversion layer has a microphase-separated structure of the p-type semiconductor and the n-type semiconductor, the p-type semiconductor has a polymer; and the n-type semiconductor has a fullerene derivative.

7 . The photoelectric conversion device of claim 5 ,
wherein the compound is 1,8-diiodooctane.

Assignees

• Toshiba Kk

Inventors

• Oooka Haruhi
• Llda Atsuko
• Nakao Hideyuki
• Todori Kenji
• Gotanda Takeshi

Classifications

• Y02E10/549

  Organic PV cells · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10K30/30

  comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains · CPC title

• H10K71/15 Primary

  characterised by the solvent used · CPC title

• H01L51/0035

  Electricity · mapped topic