Thin film transistor and its manufacturing method, array substrate and its manufacturing method, and display device

Patent metadata

Field	Value
Publication number	US-2016293771-A1
Application number	US-201414764307-A
Country	US
Kind code	A1
Filing date	Dec 17, 2014
Priority date	Aug 19, 2014
Publication date	Oct 6, 2016
Grant date	—

Abstract

A thin film transistor and its manufacturing method, an array substrate and its manufacturing method, and a display device are provided. The thin film transistor includes a gate electrode, a source electrode, a drain electrode, an active layer and a gate insulation layer. The gate insulation layer is provided above the active layer, the gate, the source electrode and the drain electrode are provided on a same layer above the gate insulation layer, the active layer and the source electrode are connected through a first connection electrode, and the active layer and the drain electrode are connected through a second connection electrode. The thin film transistor can be formed by three times of patterning processes, by which the process time period is shortened, the process yield is improved, and the process cost is reduced, and so on.

First claim

1 . A thin film transistor comprising a gate electrode, a source electrode, a drain electrode, an active layer and a gate insulation layer,
wherein the gate insulation layer is provided above the active layer, the gate electrode, the source electrode and the drain electrode are provided on a same layer above the gate insulation layer, the active layer and the source electrode are connected through a first connection electrode, and the active layer and the drain electrode are connected through a second connection electrode.

2 . The thin film transistor according to claim 1 , wherein a projection of the gate electrode is at least partly overlapped with a projection of the active layer, and a width of the gate electrode is less than a width of the active layer, and the source electrode and the drain electrode are respectively provided on both sides of the gate electrode and are respectively separated from the gate electrode;
in an area in which the active layer is provided, a width of the gate insulation layer is less than a width of the active layer, so that a source contact area is formed in an area of the active layer adjacent to the source electrode, and a drain contact area is formed in an area of the active layer adjacent to the drain electrode, the first connection electrode is tapped with the source electrode and the source contact area to connect the source electrode with the active layer, the second connection electrode is tapped with the drain electrode and the drain contact area to contact the drain electrode with the active layer.

3 . The thin film transistor according to claim 2 , wherein an area between the active layer and the poly-silicon film below the source electrode and the drain electrode is filled with an gate insulation film; and
the first connection electrode and the second connection electrode are provided on a same layer and are formed of same material.

4 . The thin film transistor according to claim 2 , wherein the gate electrode, the source electrode and the drain electrode are formed of a same material, the gate electrode, the source electrode and the drain electrode are in a single layer structure formed by any one of molybdenum, molybdenum niobium alloy, aluminum, aluminum neodymium alloy, titanium of copper; or in a stack structure obtained from sub-layers of Mo/Al/Mo or Ti/Al/Ti; the gate electrode, the source electrode and the drain electrode have a thickness ranging from 200 to 500 nm.

5 . The thin film transistor according to claim 1 , wherein the active layer is formed of a low temperature poly-silicon material.

6 . An array substrate comprising the thin film transistor according to claim 1 .

7 . The array substrate according to claim 6 , wherein the array substrate further comprises a passivation layer and a pixel electrode, the passivation layer is partly provided above the drain electrode and forms a mate drain contact area at a side of the drain electrode adjacent to the gate electrode, and the pixel electrode is connected with the drain electrode by tapping with the mate drain contact area and the drain contact area.

8 . The array substrate according to claim 7 , further comprising a gate line and a data line that are intersected with each other, the gate line is connected with the gate electrode and provided on a same layer as the gate electrode, the data line is connected with the source electrode and is provided on a same layer as the source electrode, and the gate line or the data line is disconnected at the intersection position and is connected through a line connection electrode.

9 . The array substrate according to claim 8 , wherein the pixel electrode, the first connection electrode, the second connection electrode and the line connection electrode are provided on a same layer, and are formed from a same material.

10 . The array substrate according to claim 8 , wherein the pixel electrode, the first connection electrode, the second connection electrode and the line connection electrode are formed from any one of indium gallium zinc oxide, indium zinc oxide, indium tin oxide, or indium gallium tin oxide.

11 . A display device comprising the array substrate according to claim 6 .

12 . A manufacturing method of a thin film transistor comprising steps of forming a gate electrode, a source electrode, a drain electrode, an active layer and a gate insulation layer,
wherein the gate insulation layer is formed above the active layer; the gate electrode, the source electrode and the drain electrode are formed on a same layer above the gate insulation layer; the gate electrode, the source electrode and the drain electrode are formed by same one patterning process as the active layer; and a first connection electrode is formed for connecting the active layer with the source electrode, and a second connection electrode is formed for connecting the active layer with the drain electrode.

13 . The manufacturing method according to claim 12 , wherein, the step of forming the gate electrode, the source electrode, the drain electrode and the active layer comprises:
step S1): sequentially continuously forming a poly-silicon film, a gate insulation film, a metal film and photoresist; step S2): by using a double-tone mask process, performing exposure and development to the photoresist, wherein in the mask used in the double-tone mask process, an area corresponding to forming of the gate electrode, the source electrode and the drain electrode is a light shielded area, an area corresponding to forming of the active layer having a width larger than the gate electrode is a light partially transmitting area, and a remaining area is a light fully transmitting area; after exposure and development, a thickness of the photoresist corresponding to the area for forming the gate electrode, the source electrode and the drain electrode is larger than a thickness of the photoresist corresponding to the area for forming the active layer having a width larger than the gate electrode, the photoresist in the remaining area is fully removed; step S3): by an etching process, the metal film unprotected by the photoresist is removed to form a pattern comprising the source electrode and the drain electrode; step S4): continuously etching the gate insulation film and the poly-silicon film to form a pattern comprising the active layer; step S5): by an ashing process, removing the photoresist with the smaller thickness to expose the metal film in the area having the width larger than the gate electrode; step S6): by an etching process, removing the metal film in the area of the active layer having the larger width than the gate electrode, to form a pattern comprising the gate electrode; step S7): removing all the residual photoresist; Step S8): using the gate electrode as a barrier layer, ion-doping the pattern for the active layer, and activating ions doped in a channel and source/drain area, to form the active layer.

14 . The manufacturing method according to claim 13 , wherein in the step S8), the gate electrode is used as the barrier layer, the pattern for the active layer is ion-doped by an ion implantation or ion showering method, and the channel doping and source/drain doping ions are activated by rapid heat annealing process, to form the active layer, and
wherein the ion to be doped is from PH 3 /H 2 or B 2 H 6 /H 2 , and the ion implantation dosage is between 10 15 -10 16 ions/cm 2 , and the implantation energy is between 10-100 Kev.

15 . The manufacturing method according to claim 13 , wherein in the step S1), the metal film is in a single layer structure formed by any one of molybdenum, mo

Assignees

• Boe Technology Group Co Ltd

Inventors

• Long Chunping
• Liang Yinan

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title