Laser welding of high thermal expansion glasses and glass-ceramics
US-2017047542-A1 · Feb 16, 2017 · US
US2016289111A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016289111-A1 |
| Application number | US-201615090978-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 5, 2016 |
| Priority date | May 10, 2013 |
| Publication date | Oct 6, 2016 |
| Grant date | — |
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A method of sealing a workpiece comprising forming an inorganic film over a surface of a first substrate, arranging a workpiece to be protected between the first substrate and a second substrate wherein the inorganic film is in contact with the second substrate; and sealing the workpiece between the first and second substrates as a function of the composition of impurities in the first or second substrates and as a function of the composition of the inorganic film by locally heating the inorganic film with a predetermined laser radiation wavelength. The inorganic film, the first substrate, or the second substrate can be transmissive at approximately 420 nm to approximately 750 nm.
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We claim: 1 . A method for sealing a device comprising: forming an inorganic film over a surface of a first substrate; positioning a second substrate in contact with the inorganic film; and bonding the first and second substrates by locally heating the inorganic film with laser radiation having a predetermined wavelength, wherein the inorganic film comprises: at least one oxide selected from the group consisting of ZnO, TiO 2 , SnO, SnO 2 , and CeO 2 , a thickness ranging from about 10 nm to about 2 μm, an optical absorption of at least about 10% at an ultraviolet wavelength ranging from about 193 nm to about 355 nm, and. 2 . The method of claim 1 , wherein the inorganic film, and optionally the first or second substrate, has an optical transmission of at least about 90% at a visible wavelength ranging from about 420 nm to about 750 nm. 3 . The method of claim 1 , wherein the inorganic film has an optical absorption of at least about 15% at an ultraviolet wavelength ranging from about 193 nm to about 355 nm. 4 . The method of claim 1 , wherein the inorganic film has a thickness ranging from about 100 nm to about 1 μm. 5 . The method of claim 1 , wherein the inorganic film is substantially free of inorganic fillers. 6 . The method of claim 1 , wherein the inorganic film comprises a non-fit glass composition. 7 . The method of claim 1 , wherein the inorganic film has a glass transition temperature less than about 600° C. 8 . The method of claim 1 , further comprising positioning a device to be protected between the first and second substrates. 9 . The method of claim 1 , wherein the inorganic film is formed over substantially all of the surface of the first substrate or around a perimeter of the device to be protected. 10 . A sealed device comprising: an inorganic film formed over a surface of a first substrate; a second substrate in contact with the inorganic film; and a bond formed between the inorganic film and the first and second substrates, wherein the inorganic film comprises: at least one oxide selected from the group consisting of ZnO, TiO 2 , SnO, SnO 2 , and CeO 2 , a thickness ranging from about 10 nm to about 2 μm, and an optical absorption of at least about 10% at an ultraviolet wavelength ranging from about 193 nm to about 355 nm. 11 . The sealed device of claim 10 , wherein the inorganic film, and optionally the first or second substrate, has an optical transmission of at least about 90% at a visible wavelength ranging from about 420 nm to about 750 nm. 12 . The sealed device of claim 10 , wherein the inorganic film has an optical absorption of at least about 15% at an ultraviolet wavelength ranging from about 193 nm to about 355 nm. 13 . The sealed device of claim 10 , wherein the inorganic film has a thickness ranging from about 100 nm to about 1 μm. 14 . The sealed device of claim 10 , wherein the inorganic film is substantially free of inorganic fillers. 15 . The sealed device of claim 10 , wherein the inorganic film comprises a non-frit glass composition. 16 . The sealed device of claim 10 , wherein the inorganic film has a glass transition temperature less than about 600° C. 17 . The sealed device of claim 10 , wherein at least one of the first and second substrates comprises a glass, glass-ceramic, ceramic, or metal. 18 . The sealed device of claim 10 , wherein both the first and second substrates comprise a glass or glass-ceramic. 19 . The sealed device of claim 10 , further comprising a device positioned between the first and second substrates, wherein the device is selected from the group consisting of light emitting diodes, organic light emitting diodes, conductive leads, transparent conductive oxide layers, semiconductors, electrodes, quantum dot materials, phosphors, and combinations thereof. 20 . A display device comprising the sealed device of claim 10 .
Peripheral sealing arrangements, e.g. adhesives, sealants · CPC title
Silica-free oxide glass compositions · CPC title
Organic displays, e.g. OLED · CPC title
Inorganic coating · CPC title
Electricity · mapped topic
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