Method for Manufacturing Niobate-System Ferroelectric Thin Film Device

Patent metadata

Field	Value
Publication number	US-2016284975-A1
Application number	US-201615171804-A
Country	US
Kind code	A1
Filing date	Jun 2, 2016
Priority date	Aug 29, 2013
Publication date	Sep 29, 2016
Grant date	—

Abstract

There is provided a method for manufacturing a niobate-system ferroelectric thin film device, including: a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent.

First claim

What is claimed is:

1 . A method for manufacturing a niobate-system ferroelectric thin film device, comprising:
a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent but not including hydrogen fluoride.

2 . The method according to claim 1 , wherein the chelating agent is ethylene diamine tetraacetic acids or diethylene triamine pentaacetic acid; the aqueous alkaline solution is an aqueous ammonia solution; and the etchant further includes an aqueous hydrogen peroxide solution.

3 . The method according to claim 2 , wherein the ethylene diamine tetraacetic acids are at least one selected from among ethylene diamine tetraacetic acid, ethylene diamine tetraacetic acid disodium salt dihydrate, ethylene diamine tetraacetic acid trisodium salt trihydrate, ethylene diamine tetraacetic acid tetrasodium salt tetrahydrate, ethylene diamine tetraacetic acid dipotassium salt dihydrate, ethylene diamine tetraacetic acid tripotassium salt dihydrate and ethylene diamine tetraacetic acid diammonium salt.

4 . The method according to claim 1 , wherein the etch mask is made of a silicon oxide film.

5 . The method according to claim 1 , wherein, at the ferroelectric thin film etching step, the etchant has a temperature of 45° C. or higher and lower than 100° C.

6 . The method according to claim 1 , wherein the niobate-system ferroelectric thin film is made of potassium sodium niobate or lithium niobate.

7 . The method according to claim 1 , wherein the lower electrode film is made of platinum.

8 . The method according to claim 1 , wherein the niobate-system ferroelectric thin film has a device-forming surface on which the niobate-system ferroelectric thin film device is formed; the niobate-system ferroelectric thin film includes one or more crystal grains having a crystal system and crystal planes including a (001) crystal plane; the crystal system of the niobate-system ferroelectric thin film is pseudo cubic or tetragonal; the niobate-system ferroelectric thin film is formed by sputtering in such a manner that the (001) crystal plane of the one or more crystal grains is preferentially oriented parallel to the device-forming surface.

9 . The method according to claim 1 , wherein the substrate is a silicon substrate having a thermal oxide layer thereon.

10 . The method according to claim 1 , further comprising:
an upper electrode formation step of forming an upper electrode over a desired fine pattern of the niobate-system ferroelectric thin film; and a dicing step of dicing the substrate having thereon the niobate-system ferroelectric thin film having thereon the upper electrode into one or more chips.

11 . The method according to claim 2 , wherein the etch mask is made of a silicon oxide film.

12 . The method according to claim 2 , wherein, at the ferroelectric thin film etching step, the etchant has a temperature of 45° C. or higher and lower than 100° C.

13 . The method according to claim 2 , wherein the niobate-system ferroelectric thin film is made of potassium sodium niobate or lithium niobate.

14 . The method according to claim 3 , wherein the etch mask is made of a silicon oxide film.

15 . The method according to claim 3 , wherein, at the ferroelectric thin film etching step, the etchant has a temperature of 45° C. or higher and lower than 100° C.

16 . The method according to claim 3 , wherein the niobate-system ferroelectric thin film is made of potassium sodium niobate or lithium niobate.

Assignees

• Sumitomo Chemical Co

Inventors

• Horikiri Fumimasa
• Shibata Kenji
• Suenaga Kazufumi
• Watanabe Kazutoshi
• Noguchi Masaki

Classifications

• H01L41/1873 Primary

  Electricity · mapped topic

• H01L41/0805

  Electricity · mapped topic

• H01L41/314

  Electricity · mapped topic

• H01L41/332

  Electricity · mapped topic

• H10N30/8542 Primary

  Alkali metal based oxides, e.g. lithium, sodium or potassium niobates · CPC title