Optical sensor device and method of manufacturing optical sensor device

Patent metadata

Field	Value
Publication number	US-2016284875-A1
Application number	US-201615074127-A
Country	US
Kind code	A1
Filing date	Mar 18, 2016
Priority date	Mar 23, 2015
Publication date	Sep 29, 2016
Grant date	—

Abstract

An optical sensor device according to an aspect of the present invention comprises an element-mounting portion, an optical sensor element provided on the element-mounting portion, a lead having a first contact region connected to the optical sensor element and a second contact region for an external connection, and a resin-encapsulating portion which covers at least a light-receiving plane of the optical sensor element. The resin-encapsulating portion comprises a resin and a glass filler including borosilicate glass dispersed in the resin. The transmissivity of the resin-encapsulating portion is equal to or more than 40% in a wavelength range between 300 nm to 400 nm.

First claim

1 . An optical sensor device comprising:
an element-mounting portion; an optical sensor element provided on the element-mounting portion; a lead having a first contact region connected to the optical sensor element and a second contact region for an external connection; and a resin-encapsulating portion covering at least a light-receiving plane of the optical sensor element, and including a resin and a glass filler, the resin-encapsulating portion having a transmissivity equal to or more than 40% in a wavelength range of 300 nm to 400 nm, the glass filler including borosilicate glass dispersed in the resin.

2 . The optical sensor device according to claim 1 ,
wherein at least a part of the element-mounting portion is exposed from the resin-encapsulating portion.

3 . The optical sensor device according to claim 1 , further comprising
a mounting substrate portion provided on a side opposite to the light-receiving plane of the optical sensor element.

4 . The optical sensor device according to claim 3 ,
wherein the lead and the element-mounting portion are embedded into the mounting substrate portion, and the first contact region of the lead, the second contact region of the lead and a placement surface of the element-mounting portion are exposed from the mounting substrate portion.

5 . The optical sensor device according to claim 4 ,
wherein the first contact region of the lead is exposed from a first surface of the mounting substrate portion on the optical sensor element side, and the second contact region of the lead is exposed from a second surface of the mounting substrate portion opposite to the first surface.

6 . The optical sensor device according to claim 4 ,
wherein a surface of the element-mounting portion opposite to the placement surface is exposed from the mounting substrate portion.

7 . The optical sensor device according to claim 3 ,
wherein the mounting substrate portion includes a ceramic or a printed circuit board.

8 . The optical sensor device according to claim 3 ,
wherein the mounting substrate portion is provided on the same side as the light-receiving plane side of the optical sensor element, and the mounting substrate portion on the light-receiving plane side has a cavity whose diameter enlarges in a light-receiving direction of the optical sensor element from the element-mounting portion.

9 . The optical sensor device according to claim 1 ,
wherein the transmissivity of the resin-encapsulating portion is equal to or more than 60% in a wavelength range of 300 nm to 350 nm.

10 . The optical sensor device according to claim 1 ,
wherein a composition of the borosilicate glass satisfies the following conditions (1) to (10) in terms of % by weight in a range where a total weight of the borosilicate glass is 100% by weight: (1) a weight ratio of SiO 2 is 60% to 70%; (2) a weight ratio of B 2 O 3 is 5% to 20%; (3) a weight ratio of Sb 2 O 3 is 1% to 5%; (4) a total weight ratio of Al 2 O 3 , La 2 O 3 , and Y 2 O 3 is 3% to 10%; (5) a total weight ratio of ZnO, MgO, CaO, and SrO is 5% to 15%; (6) a total weight ratio of Li 2 O, Na 2 O, and K 2 O is 10% to 30%; (7) a weight ratio of CuO is 1% to 5%; (8) a weight ratio of TiO 2 is 1% to 5%; (9) a weight ratio of Co 2 O 3 is 1% to 5%; and (10) a weight ratio of NiO is 1% to 5%.

11 . The optical sensor device according to claim 1 ,
wherein a composition of the borosilicate glass satisfies the following conditions (11) to (19) in terms of % by weight in a range where a total weight of the borosilicate glass is 100% by weight: (11) a weight ratio of SiO 2 is 50% to 70%; (12) a weight ratio of BaO is 10% to 30%; (13) a weight ratio of B 2 O 3 is 1% to 5%; (14) a weight ratio of Sb 2 O 3 is 1% to 5%; (15) a total weight ratio of Al 2 O 3 , La 2 O 3 , and Y 2 O 3 is 5% to 10%; (16) a total weight ratio of Li 2 O, Na 2 O, and K 2 O is 10% to 20%; (17) a weight ratio of CuO is 1% to 5%; (18) a weight ratio of Co 2 O 3 is 1% to 5%; and (19) a weight ratio of NiO is 1% to 10%.

12 . The optical sensor device according to claim 1 ,
wherein a particle size of the glass filler is 0.5 μm to 20.0 μm.

13 . A method of manufacturing the optical sensor device according to any one of claims 1 to 12 , the method comprising:
a step of preparing the glass filler by crushing borosilicate glass which has a transmissivity of equal to or more than 40% in a wavelength range of 300 nm to 400 nm; and
a step of sealing a periphery of the optical sensor element by a transfer molding method using a tablet formed with a mixture of the glass filler and a resin.

Assignees

• Sii Semiconductor Corp

Inventors

• Tsukagoshi Koji
• Higashi Noriyoshi

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• C03C3/095

  containing rare earths · CPC title

• H10F77/93

  Interconnections · CPC title

• H10F71/00

  Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title