Microelectronic assemblies with inductors in direct bonding regions
US-2024355768-A1 · Oct 24, 2024 · US
High resistivity soft magnetic material for miniaturized power converter
US2016284788A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016284788-A1 |
| Application number | US-201514744127-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 19, 2015 |
| Priority date | Mar 24, 2015 |
| Publication date | Sep 29, 2016 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method for forming an on-chip magnetic structure, the method comprising: activating a magnetic seed layer with palladium, the magnetic seed layer being positioned over a semiconductor substrate; and electrolessly plating a magnetic alloy onto the palladium to form a Pd/CoWP layer; wherein the Pd/CoWP layer comprises cobalt in a range from about 80 to about 90 at. % based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material. 2 . The method of claim 1 , wherein the magnetic seed layer comprises nickel and iron. 3 . The method of claim 1 , wherein the on-chip magnetic structure is an inductor. 4 . The method of claim 1 , wherein the Pd/CoWP layer is amorphous. 5 . The method of claim 1 , wherein the magnetic seed layer is at least 40 nm thick. 6 . The method of claim 1 , wherein the Pd/CoWP layer is magnetically stable to at least 200° C. for at least 1 hour. 7 . The on-chip magnetic structure of claim 1 , wherein the cobalt is in a range from about 81 to about 86 at. %. 8 . A method for forming an on-chip magnetic structure, the method comprising: activating a magnetic seed layer with palladium, the magnetic seed layer being positioned over a semiconductor substrate; and electrolessly plating a magnetic alloy onto the palladium in the presence of a magnetic field bias to form a film; wherein the film comprises cobalt in a range from about 80 to about 90 at. % based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material. 9 . The method of claim 8 , wherein the phosphorous is in a range from about 9 to about 14 at. %. 10 . The method of claim 8 , wherein the tungsten is in a range from about 4 to about 7 at. %. 11 . The method of claim 8 , wherein the film's resistivity is at least 110 μΩ·cm. 12 . The method of claim 8 , wherein electrolessly plating is performed with a deposition solution comprising lead. 13 . The method of claim 8 , wherein the film is a soft magnetic material.
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2016284788A1 cover?
- An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of a…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H10D1/20. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 29 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).