Slurry, polishing solution set, polishing solution, substrate polishing method, and substrate

Patent metadata

Field	Value
Publication number	US-2016280961-A1
Application number	US-201414914898-A
Country	US
Kind code	A1
Filing date	Aug 26, 2014
Priority date	Aug 30, 2013
Publication date	Sep 29, 2016
Grant date	—

Abstract

A polishing liquid comprising abrasive grains, an additive, and water, wherein the abrasive grains include a hydroxide of a tetravalent metal element, produce absorbance of 1.00 or more for light having a wavelength of 400 nm in a first aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %, and produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in the first aqueous dispersion, and a NO 3 − concentration of a second aqueous dispersion obtained by retaining the first aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.

First claim

1 . A slurry comprising:
abrasive grains; and water, wherein the abrasive grains include a hydroxide of a tetravalent metal element, produce absorbance of 1.00 or more for light having a wavelength of 400 nm in a first aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %, and produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in the first aqueous dispersion, and a NO 3 − concentration of a second aqueous dispersion obtained by retaining the first aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.

2 . The slurry according to claim 1 , wherein a difference between a NO 3 − concentration of the first aqueous dispersion and the NO 3 − concentration of the second aqueous dispersion is 125 ppm or less.

3 . The slurry according to claim 1 , wherein a NO 3 − concentration of the first aqueous dispersion is 100 ppm or less.

4 . The slurry according to claim 1 , wherein the abrasive grains produce absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in the first aqueous dispersion.

5 . The slurry according to claim 1 , wherein the abrasive grains produce light transmittance of 95%/cm or more for light having a wavelength of 500 nm in the first aqueous dispersion.

6 . The slurry according to claim 1 , wherein the abrasive grains produce absorbance of 1.000 or more for light having a wavelength of 290 nm in a third aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.

7 . The slurry according to claim 1 , wherein the abrasive grains produce absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in a third aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.

8 . The slurry according to claim 1 , wherein a content of the abrasive grains is 0.01 mass % or more based on a total mass of the slurry.

9 . The slurry according to claim 1 , wherein the hydroxide of a tetravalent metal element is obtained by reacting a salt of a tetravalent metal element with an alkali source.

10 . The slurry according to claim 1 , wherein the tetravalent metal element is tetravalent cerium.

11 . A polishing-liquid set wherein constituent components of a polishing liquid are separately stored as a first liquid and a second liquid such that the first liquid and the second liquid are mixed to form the polishing liquid, the first liquid is the slurry according to claim 1 , and the second liquid comprises an additive and water.

12 . The polishing-liquid set according to claim 11 , wherein a content of the additive is 0.01 mass % or more based on a total mass of the polishing liquid.

13 . A polishing liquid comprising:
abrasive grains; an additive; and water, wherein the abrasive grains include a hydroxide of a tetravalent metal element, produce absorbance of 1.00 or more for light having a wavelength of 400 nm in a first aqueous dispersion having a content of the abrasive grains adjusted to 1.0 mass %, and produce light transmittance of 50%/cm or more for light having a wavelength of 500 nm in the first aqueous dispersion, and a NO 3 − concentration of a second aqueous dispersion obtained by retaining the first aqueous dispersion at 60° C. for 72 hours is 200 ppm or less.

14 . The polishing liquid according to claim 13 , wherein a difference between a NO 3 − concentration of the first aqueous dispersion and the NO 3 − concentration of the second aqueous dispersion is 125 ppm or less.

15 . The polishing liquid according to claim 13 , wherein a NO 3 − concentration of the first aqueous dispersion is 100 ppm or less.

16 . The polishing liquid according to claim 13 , wherein the abrasive grains produce absorbance of 1.00 or more and less than 1.50 for light having a wavelength of 400 nm in the first aqueous dispersion.

17 . The polishing liquid according to claim 13 , wherein the abrasive grains produce light transmittance of 95%/cm or more for light having a wavelength of 500 nm in the first aqueous dispersion.

18 . The polishing liquid according to claim 13 , wherein the abrasive grains produce absorbance of 1.000 or more for light having a wavelength of 290 nm in a third aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.

19 . The polishing liquid according to claim 13 , wherein the abrasive grains produce absorbance of 0.010 or less for light having a wavelength of 450 to 600 nm in a third aqueous dispersion having a content of the abrasive grains adjusted to 0.0065 mass %.

20 . The polishing liquid according to claim 13 , wherein a content of the abrasive grains is 0.01 mass % or more based on a total mass of the polishing liquid.

21 . The polishing liquid according to claim 13 , wherein the hydroxide of a tetravalent metal element is obtained by reacting a salt of a tetravalent metal element with an alkali source.

22 . The polishing liquid according to claim 13 , wherein the tetravalent metal element is tetravalent cerium.

23 . The polishing liquid according to claim 13 , wherein a content of the additive is 0.01 mass % or more based on a total mass of the polishing liquid.

24 . A polishing method of a base, comprising:
a step of arranging a material to be polished of a base having the material to be polished on a surface so as to be opposed to a polishing pad; and a step of polishing at least a part of the material to be polished by supplying the slurry according to claim 1 between the polishing pad and the material to be polished.

25 . A polishing method of a base, comprising:
a step of arranging a material to be polished of a base having the material to be polished on a surface so as to be opposed to a polishing pad; a step of obtaining the polishing liquid by mixing the first liquid and the second liquid of the polishing-liquid set according to claim 11 ; and a step of polishing at least a part of the material to be polished by supplying the polishing liquid between the polishing pad and the material to be polished.

26 . A polishing method of a base, comprising:
a step of arranging a material to be polished of a base having the material to be polished on a surface so as to be opposed to a polishing pad; and a step of polishing at least a part of the material to be polished by supplying each of the first liquid and the second liquid of the polishing-liquid set according to claim 11 between the polishing pad and the material to be polished.

27 . A polishing method of a base, comprising:
a step of arranging a material to be polished of a base having the material to be polished on a surface so as to be opposed to a polishing pad; and a step of polishing at least a part of the material to be polished by supplying the polishing liquid according to claim 13 between the polishing pad and the material to be polished.

28 . The polishing method according to claim 24 , wherein the material to be polished includes silicon oxide.

29 . The polishing method according to claim 24 , wherein irregularities are formed on a surface of the material to be polished.

30 . A base polished by the polishing method according to claim 24 .

Assignees

• Hitachi Chemical Co Ltd

Inventors

• Iwano Tomohiro

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• C01B33/12

  Silica; Hydrates thereof, e.g. lepidoic silicic acid · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/042

  operating processes therefor · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title