Ceramic electrostatic chuck bonded with high temperature polymer bond to metal base

US2016276196A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016276196-A1
Application numberUS-201614997852-A
CountryUS
Kind codeA1
Filing dateJan 18, 2016
Priority dateMar 20, 2015
Publication dateSep 22, 2016
Grant date

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Abstract

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Implementations described herein provide a substrate support assembly which enables high temperature processing. The substrate support assembly includes an electrostatic chuck secured to a cooling base by a bonding layer. The bonding layer has a first layer and a second layer. The first layer has an operating temperature that includes a temperature of about 300 degrees Celsius. The second layer having a maximum operating temperature that is below 250 degrees Celsius.

First claim

Opening claim text (preview).

What is claimed is: 1 . A substrate support assembly, comprising: an electrostatic chuck having a workpiece supporting surface and a bottom surface; a cooling base having a top surface; and a bonding layer securing the bottom surface of the electrostatic chuck and the top surface of the cooling base, wherein the bonding layer comprises: a first layer adhered to the bottom surface, wherein the first layer has an operating temperature that includes a temperature of about 300 degrees Celsius; and a second layer disposed below the first layer, the second layer having a maximum operating temperature that is below 250 degrees Celsius. 2 . The substrate support assembly of claim 1 , wherein the bonding layer further comprises: a third layer disposed below the second layer and bonded to the cooling base, wherein the third layer has a maximum operating temperature that is below about 200 degrees Celsius. 3 . The substrate support assembly of claim 1 , wherein the first layer has an operating temperature that includes temperatures between about 250 degrees Celsius and about 325 degrees Celsius. 4 . The substrate support assembly of claim 1 , wherein the thermal conductivity of the bonding layer is about 0.2 W/mK. 5 . The substrate support assembly of claim 2 , wherein the third layer has an operating temperature that includes temperatures between about 170 degrees Celsius and 60 degrees Celsius. 6 . The substrate support assembly of claim 1 , wherein the first layer is comprised of a perfluoro compound. 7 . The substrate support assembly of claim 6 , wherein a thickness of the first layer is between about 0.3 mm and about 5 mm. 8 . The substrate support assembly of claim 1 , wherein the second layer comprises polyimide or silicone. 9 . The substrate support assembly of claim 1 , wherein the second layer has a thermal conductivity of less than about 1 W/mK. 10 . The substrate support assembly of claim 2 , wherein the third layer comprises silicone. 11 . The substrate support assembly of claim 1 further comprising: an o-ring providing a seal between the electrostatic chuck and the cooling plate, the o-ring circumscribing the bonding layer. 12 . The substrate support assembly of claim 2 , wherein the coefficient of thermal expansion for the first layer is greater than that of the second layer or the third layer. 14 . A substrate support assembly, comprising: an electrostatic chuck having a heater, a workpiece support surface and a bottom surface; a cooling base having a top surface; and a bonding layer securing the bottom surface of the electrostatic chuck and the top surface of the cooling base, wherein the bonding layer comprises: a first layer adhered to the bottom surface, wherein the first layer has an operating temperature that includes a temperature of about 300 degrees Celsius; a second layer disposed below the first layer, the second layer having a maximum operating temperature that is lower that of the first layer; and a third layer disposed below the second layer and in contact with the cooling plate, the third layer having a maximum operating temperature that is lower that of the second layer. 15 . The substrate support assembly of claim 14 , wherein the thermal conductivity of the bonding layer is about 0.2 W/mK. 16 . The substrate support assembly of claim 14 , wherein the third layer has an operating temperature that includes temperatures between about 170 degrees Celsius and 60 degrees Celsius. 17 . The substrate support assembly of claim 14 , wherein the first layer is comprised of a perfluoro polymer compound. 18 . The substrate support assembly of claim 14 , wherein the second layer comprises at least one of is one of a perfluoro polymer compound, silicone, polyimide and porous graphite. 19 . The substrate support assembly of claim 14 , wherein the second layer has a thermal conductivity of less than about 1 W/mK. 19 . The substrate support assembly of claim 14 , further comprising: an o-ring providing a seal between the electrostatic chuck and the cooling plate, the o-ring circumscribing the bonding layer. 20 . A substrate support assembly, comprising: an electrostatic chuck having a heater, a workpiece support surface and a bottom surface; a cooling plate having a top surface and lips along the top surface; a metal plate disposed below the bottom surface of the electrostatic chuck; and a bonding layer disposed between the metal plate and the top surface of the cooling plate; and a first layer adhered to the bottom surface, wherein the first layer has an operating temperature that includes a temperature of about 300 degrees Celsius; and a second layer disposed below the first layer, the second layer having a maximum operating temperature that is lower that of the first layer. 21 . A substrate support assembly, comprising: an electrostatic chuck having a workpiece supporting surface and a bottom surface; a cooling base having a top surface; and a bonding layer securing the bottom surface of the electrostatic chuck and the top surface of the cooling base, wherein the bonding layer comprises: a first layer adhered to the bottom surface, wherein the first layer has an operating temperature that includes a temperature of about 300 degrees Celsius; and a second layer stacked below the first layer and bonded to the cooling base, the second layer having a maximum operating temperature less than the maximum operating temperature of the first layer. 22 . The substrate support assembly of claim 21 , wherein the bonding layer further comprises: a third layer disposed between the second layer and the first layer, the third layer having a maximum operating temperature that is below about 300 degrees Celsius. 23 . The substrate support assembly of claim 21 , wherein the thermal conductivity of the bonding layer is about 0.2 W/mK. 24 . The substrate support assembly of claim 21 , wherein the first layer is comprised of a perfluoro compound. 25 . The substrate support assembly of claim 24 , wherein the second layer comprises polyimide or silicone. 26 . The substrate support assembly of claim 24 , wherein the second layer comprises a perfluoro compound.

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What does patent US2016276196A1 cover?
Implementations described herein provide a substrate support assembly which enables high temperature processing. The substrate support assembly includes an electrostatic chuck secured to a cooling base by a bonding layer. The bonding layer has a first layer and a second layer. The first layer has an operating temperature that includes a temperature of about 300 degrees Celsius. The second layer…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H10P72/0432. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Sep 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).