Pattern formation method

Patent metadata

Field	Value
Publication number	US-2016276167-A1
Application number	US-201514808109-A
Country	US
Kind code	A1
Filing date	Jul 24, 2015
Priority date	Mar 16, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

According to one embodiment, a pattern formation method includes forming a resist pattern on an underlying film, slimming the resist pattern, forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film, forming a neutral, film having affinity for the first polymer and a second polymer on the underlying film after the etching, forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film, forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation.

First claim

What is claimed is:

1 . A pattern formation method comprising:
forming a resist pattern on an underlying film; slimming the resist pattern; forming a pinning portion having affinity for a first polymer by depositing, on a surface of the slimmed resist pattern, an etching product produced by etching the underlying film; forming a neutral film having affinity for the first polymer and a second polymer on the underlying film, after the etching; forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film; forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation, the microphase separation pattern having a structure in which a first portion formed of the first polymer and a second portion formed of the second polymer are arranged; and removing one of the first portion and the second portion.

2 . The method of claim 1 , wherein
the etching product contains silicon.

3 . The method of claim 1 , wherein
the underlying film contains silicon.

4 . The method of claim 1 , wherein
the underlying film is formed of spin-on glass (SOG).

5 . The method of claim 1 , wherein
the first polymer is polymethyl methacrylate (PMMA), and the second polymer is polystyrene (PS).

6 . The method of claim 1 , wherein
the predetermined process includes a thermal process.

7 . The method of claim 1 , wherein
the resist pattern is formed of a positive resist.

8 . The method of claim 1 , wherein
the resist pattern is formed of a negative resist.

9 . The method of claim 1 , wherein
a line-and-space pattern is formed by removing one of the first portion and the second portion.

10 . The pattern formation method comprising:
forming a resist pattern on an underlying film; forming a pinning portion having affinity for a first polymer by slimming the resist pattern; forming a neutral film having affinity for the first polymer and a second polymer on a part of the underlying film which is not covered by the slimmed resist pattern; forming a block copolymer film containing the first polymer and the second polymer on the pinning portion and the neutral film; forming a microphase separation pattern by applying a predetermined process to the block copolymer film to perform microphase separation, the microphase separation pattern having a structure in which a first portion formed of the first polymer and a second portion formed of the second polymer are arranged; and removing one of the first portion and the second portion.

11 . The method of claim 10 , wherein
a surface of the slimmed resist pattern is modified.

12 . The method of claim 10 , wherein
the resist pattern is slimmed using an oxygen gas.

13 . The method of claim 10 , wherein the underlying film contains silicon.

14 . The method of claim 10 , wherein
the underlying film is formed of spin-on glass (SOG).

15 . The method of claim 10 , wherein
the first polymer is polymethyl methacrylate (PMMA), and the second polymer is polystyrene (PS).

16 . The method of claim 10 , wherein
the predetermined process includes a thermal process.

17 . The method of claim 10 , wherein
the resist pattern is formed of a positive, resist.

18 . The method of claim 10 , wherein
the resist pattern is formed of a negative resist.

19 . The method of claim 10 , further comprising
etching the underlying film, before slimming the resist pattern.

20 . The method of claim 10 , wherein
a line-and-space pattern is formed by removing one of the first portion and the second portion.

Assignees

• Toshiba Kk

Inventors

• Seino Yuriko

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/287 Primary

  by chemical means · CPC title