Chemically amplified positive resist composition and resist pattern forming process
US-12164231-B2 · Dec 10, 2024 · US
Resist composition, method for forming resist pattern, acid generator and compound
US2016274458A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016274458-A1 |
| Application number | US-201615072004-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 16, 2016 |
| Priority date | Mar 20, 2015 |
| Publication date | Sep 22, 2016 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including a compound (B0-1) represented by general formula (b0) shown below (in the formula, Yx 01 represents a divalent linking group; n represents an integer of 1 to 3; and M′ m+ represents an organic cation having a valency of m.
First claim
Opening claim text (preview).
What is claimed is: 1 . A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition comprising: a base component (A) which exhibits changed solubility in a developing solution under action of acid, and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) comprising a compound (B0-1) represented by general formula (b0) shown below: wherein Yx 01 represents a divalent linking group; n represents an integer of 1 to 3; and M′ m+ represents an organic cation having a valency of m. 2 . The resist composition according to claim 1 , wherein Yx 01 represents a linear or branched aliphatic hydrocarbon group of 1 to 10 carbon atoms. 3 . The resist composition according to claim 1 , further comprising a photoreactive quencher component (D0). 4 . A method of forming a resist pattern, comprising: forming a resist film on a substrate the a resist composition according to claim 1 ; exposing the resist film; and developing the resist film to form a resist pattern. 5 . An acid generator comprising a compound (B0-1) represented by general formula (b0) shown below: wherein Yx 01 represents a divalent linking group; n represents an integer of 1 to 3; and M′ m+ represents an organic cation having a valency of m. 6 . The acid generator according to claim 5 , wherein Yx 01 represents a linear or branched aliphatic hydrocarbon group of 1 to 10 carbon atoms. 7 . A compound represented by general formula (b0) shown below: wherein Yx 01 represents a divalent linking group; n represents an integer of 1 to 3; and M′ m+ represents an organic cation having a valency of m. 8 . The compound according to claim 7 , wherein Yx 01 represents a linear or branched aliphatic hydrocarbon group of 1 to 10 carbon atoms.
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Classifications
Non-aqueous compositions · CPC title
Mono-, di- or tri-ethylamine · CPC title
- G03F7/0045Primary
with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title
Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title
Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title
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- What does patent US2016274458A1 cover?
- A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and which includes a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including a compound (B0-1) represent…
- Who is the assignee on this patent?
- Tokyo Ohka Kogyo Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification G03F7/0045. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Thu Sep 22 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).