Oxide material and semiconductor device
US-2024395942-A1 · Nov 28, 2024 · US
Method of forming Ga2O3-based crystal film and crystal multilayer structure
US9245749B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9245749-B2 |
| Application number | US-201414581893-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 23, 2014 |
| Priority date | Dec 24, 2013 |
| Publication date | Jan 26, 2016 |
| Grant date | Jan 26, 2016 |
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- Title
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Abstract
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A method of forming a Ga 2 O 3 -based crystal film includes epitaxially growing a Ga 2 O 3 -based crystal film on a (001)-oriented principal surface of a Ga 2 O 3 -based substrate at a growth temperature of not less than 750° C. A crystal multilayer structure includes a Ga 2 O 3 -based substrate with a (001)-oriented principal surface, and a Ga 2 O 3 -based crystal film formed on the principal surface of the Ga 2 O 3 -based substrate by epitaxial growth. The principal surface has a flatness of not more than 1 nm in an RMS value.
First claim
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What is claimed is: 1. A method of forming a Ga 2 O 3 -based crystal film, comprising epitaxially growing a Ga 2 O 3 -based crystal film on a (001)-oriented principal surface of a Ga 2 O 3 -based substrate at a growth temperature of not less than 750° C. wherein the principal surface of the Ga 2 O 3 -based crystal film has a flatness of not more than 1 nm in an RMS value. 2. The method according to claim 1 , wherein the Ga 2 O 3 -based crystal film comprises a Ga 2 O 3 crystal film. 3. A crystal multilayer structure, comprising; a Ga 2 O 3 -based substrate with a (001)-oriented principal surface; and a Ga 2 O 3 -based crystal film formed on the principal surface of the Ga 2 O 3 -based substrate by epitaxial growth, wherein the principal surface has a flatness of not more than 1 nm in an RMS value. 4. The crystal multilayer structure according to claim 3 , wherein the Ga 2 O 3 -based crystal film comprises a Ga 2 O 3 crystal film.
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using physical deposition, e.g. vacuum deposition or sputtering · CPC title
Structure · CPC title
Crystal orientations · CPC title
being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title
- H10P14/3434Primary
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
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- What does patent US9245749B2 cover?
- A method of forming a Ga 2 O 3 -based crystal film includes epitaxially growing a Ga 2 O 3 -based crystal film on a (001)-oriented principal surface of a Ga 2 O 3 -based substrate at a growth temperature of not less than 750° C. A crystal multilayer structure includes a Ga 2 O 3 -based substrate with a (001)-oriented principal surface, and a Ga 2 O 3 -based crystal film formed on the principal …
- Who is the assignee on this patent?
- Tamura Seisakusho Kk, Nat Inst Inf & Comm Tech
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3434. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).