Negative resist composition, method of forming resist pattern and complex

US2016259244A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016259244-A1
Application numberUS-201615153044-A
CountryUS
Kind codeA1
Filing dateMay 12, 2016
Priority dateDec 5, 2013
Publication dateSep 8, 2016
Grant date

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

A negative resist composition including a complex represented by the general formula (1); and a polymerization initiator, in which M represents hafnium (Hf) or zirconium (Zr), X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant (pKa) of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4. [MX n Y 4-n ]  (1)

First claim

Opening claim text (preview).

What is claimed is: 1 . A complex which is represented by the following general formula (1): [MX n Y 4-n ]  (1) wherein M represents hafnium or zirconium, X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant pKa of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4. 2 . The complex according to claim 1 , wherein the acid dissociation constant pKa of the acid is 2.8 or less. 3 . The complex according to claim 1 , wherein X in the formula (1) is a ligand comprising a conjugate base represented by general formula (2) shown below: R 1 —Y 1 —SO 3 ⊖   (2) wherein R 1 represents a polymerizable group having a group selected from groups (X-01) to (X-07) shown below, and Y 1 represents a divalent linking group or a single bond; wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, Ar represents an aromatic hydrocarbon group, n represents an integer of 0 to 2, and * represents a valence bond. 4 . The complex according to claim 1 , wherein X in the formula (1) is a ligand comprising a conjugate base selected from the group consisting of a conjugate base of 3-(methacryloyloxy)-1-propanesulfonic acid, a conjugate base of 3-(acryloyloxy)-1-propanesulfonic acid, a conjugated base of vinylsulfonic acid, and a conjugated base of styrenesulfonic acid. 5 . The complex according to claim 1 , wherein X in the formula (1) is a ligand comprising a conjugate base represented by general formula (3) shown below: R 2 —Y 2 —COO ⊖   (3) wherein, in formula (3), R 2 represents a polymerizable group having a group selected from (X-01) to (X-07) shown below, and Y 2 represents a divalent linking group or a single bond: wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, Ar represents an aromatic hydrocarbon group, n represents an integer of 0 to 2, and * represents a valence bond. 6 . The complex according to claim 1 , wherein X in the formula (1) is a ligand comprising a conjugate base selected from the group consisting of a conjugate base of carboxymethyl methacrylate, and a conjugate base of carboxymethyl acrylate. 7 . The complex according to claim 1 , wherein M represents hafnium. 8 . The complex according to claim 2 , wherein M represents hafnium. 9 . The complex according to claim 3 , wherein M represents hafnium. 10 . The complex according to claim 4 , wherein M represents hafnium. 11 . The complex according to claim 5 , wherein M represents hafnium. 12 . The complex according to claim 6 , wherein M represents hafnium. 13 . The complex according to claim 1 , wherein M represents zirconium. 14 . The complex according to claim 2 , wherein M represents zirconium. 15 . The complex according to claim 3 , wherein M represents zirconium. 16 . The complex according to claim 4 , wherein M represents zirconium. 17 . The complex according to claim 5 , wherein M represents zirconium. 18 . The complex according to claim 6 , wherein M represents zirconium. 19 . The complex according to claim 4 , wherein X in the formula (1) is a ligand comprising a conjugate base of 3-(methacryloyloxy)-1-propanesulfonic acid, and M represents hafnium. 20 . The complex according to claim 6 , wherein X in the formula (1) is a ligand comprising a conjugate base of carboxymethyl methacrylate, and M represents hafnium.

Assignees

Inventors

Classifications

  • G03F7/027Primary

    Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds (G03F7/075 takes precedence) · CPC title

  • Chemistry & Metallurgy · mapped topic

  • G03F7/0042Primary

    with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence) · CPC title

  • Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

  • C08F30/04Primary

    containing a metal · CPC title

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What does patent US2016259244A1 cover?
A negative resist composition including a complex represented by the general formula (1); and a polymerization initiator, in which M represents hafnium (Hf) or zirconium (Zr), X represents a ligand comprising a conjugate base of an acid which has an acid dissociation constant (pKa) of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represent…
Who is the assignee on this patent?
Tokyo Ohka Kogyo Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/027. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Sep 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).