Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias

Patent metadata

Field	Value
Publication number	US-2016258078-A1
Application number	US-201514638750-A
Country	US
Kind code	A1
Filing date	Mar 4, 2015
Priority date	Mar 4, 2015
Publication date	Sep 8, 2016
Grant date	—

Abstract

Prior to electrodeposition of copper onto a nickel-containing or a cobalt-containing seed layer, a semiconductor wafer is pretreated by contacting the seed layer with a pre-wetting liquid comprising cupric ions at a concentration of at least about 10 g/L, more preferably of at least about 30 g/L, and an electroplating suppressor, such as a compound from the class of polyalkylene glycols. This pre-treatment is particularly useful for wafers having one or more large recessed features, such as through silicon vias (TSVs). The pre-wetting liquid is preferably degassed prior to contact with the wafer substrate. The pretreatment is preferably performed under subatmospheric pressure to prevent bubble formation within the recessed features. After the wafer is pretreated, copper is electrodeposited from an electroplating solution (such as an acidic electroplating solution) to fill the recessed features on the wafer. The described pretreatment minimizes corrosion of seed layer during electroplating and reduces plating defects.

First claim

1 . A method of electroplating copper on a wafer substrate comprising one or more recessed features, the method comprising:
(a) providing a wafer substrate having an exposed nickel-containing and/or cobalt-containing seed layer on at least a portion of its surface; (b) contacting the wafer substrate with a pre-wetting liquid, the pre-wetting liquid comprising cupric (Cu 2+ ) ions at a concentration of at least about 10 g/L and an electroplating suppressor, to pre-wet the seed layer on the wafer substrate; and (c) electrodepositing copper onto the seed layer, wherein the electrodeposited copper at least partially fills the one or more recessed features.

2 . The method of claim 1 , wherein the seed layer is a nickel-containing layer.

3 . The method of claim 1 , wherein (c) comprises electrodepositing copper onto the seed layer using an acidic electroplating solution.

4 . The method of claim 1 , wherein the wafer substrate is contacted with the pre-wetting liquid in (b) under subatmospheric pressure.

5 . The method of claim 2 , wherein the pre-wetting liquid comprises cupric (Cu 2+ ) ions at a concentration of at least about 30 g/L.

6 . The method of claim 2 , wherein a concentration of the electroplating suppressor is at least about 50 ppm.

7 . The method of claim 2 , wherein the electroplating suppressor is a compound from a class of polyalkylene glycols.

8 . The method of claim 2 , wherein the electroplating suppressor is a compound from a class of polyalkylene glycols containing an amino group.

9 . The method of claim 2 , wherein pH of the pre-wetting liquid is less than about 2.

10 . The method of claim 2 , further comprising degassing the pre-wetting liquid prior to contacting the wafer substrate.

11 . The method of claim 2 , wherein the concentration of cupric ions in the pre-wetting liquid is the same as or greater than a concentration of cupric ions in an electroplating solution used for electroplating copper in (c).

12 . The method of claim 2 , wherein the pre-wetting liquid has the same composition as an electroplating solution used for electroplating copper in (c).

13 . The method of claim 2 , wherein the pre-wetting liquid further comprises an additive selected from the group consisting of a halide, an electroplating accelerator, an electroplating leveler and combinations thereof.

14 . The method of claim 2 , wherein the pre-wetting liquid comprises an acid selected from the group consisting of sulfuric acid, methanesulfonic acid and mixtures thereof.

15 . The method of claim 2 , wherein the nickel-containing layer is a NiB layer.

16 . The method of claim 2 , wherein the nickel-containing layer is a NiP layer.

17 . The method of claim 2 , wherein the one or more recessed features are through silicon vias (TSVs).

18 . The method of claim 2 , wherein the pre-wetting liquid comprises an acid, cupric ions at a concentration of at least about 30 g/L, and an electroplating suppressor at a concentration of at least about 50 ppm, wherein the electroplating suppressor is a compound from a class of polyalkylene glycols.

19 . The method of claim 1 , further comprising:
applying photoresist to the wafer substrate; exposing the photoresist to light; patterning the photoresist and transferring the pattern to the wafer substrate; and selectively removing the photoresist from the wafer substrate.

20 . An apparatus for electroplating copper on an exposed nickel-containing and/or cobalt-containing seed layer on a wafer substrate comprising one or more recessed features, the apparatus comprising:
(a) a pre-wetting chamber configured for delivering a pre-wetting liquid onto the wafer substrate; (b) a plating vessel configured for holding a copper electroplating solution, wherein the apparatus is configured for electrodepositing copper from the electroplating solution onto the seed layer on the wafer substrate; and (c) a controller comprising program instructions and/or logic for
(i) contacting the wafer substrate with a pre-wetting liquid, the pre-wetting liquid comprising cupric (Cu 2+ ) ions at a concentration of at least about 10 g/L and an electroplating suppressor to pre-wet the seed layer on the wafer substrate; and
(ii) electrodepositing copper onto the seed layer, wherein the electrodeposited copper at least partially fills the one or more recessed features.

Assignees

• Lam Res Corp

Inventors

• Thorum Matthew S
• Mayer Steven T

Classifications

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title