Method for manufacturing nanometric objects using the rupture of a layer deformed by wrinkles

US2016257597A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016257597-A1
Application numberUS-201415028836-A
CountryUS
Kind codeA1
Filing dateOct 16, 2014
Priority dateOct 17, 2013
Publication dateSep 8, 2016
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.

First claim

Opening claim text (preview).

1 - 10 . (canceled) 11 : A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method comprising: melting the foundation to bring the foundation to a liquid state for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting resulting in a stress relaxation of the elastic layer which generates a simultaneous deformation, by formation of wrinkles, of the elastic layer and of the foundation, the formation of the wrinkles being accompanied by a localized contact between the elastic layer and the rigid substrate separating regions of the foundation; solidifying the foundation to bring the foundation back to a solid state, the solidification forming a solid structure having wrinkles at the surface; the melting and solidification being reiterated to increase an interval between separated regions of the foundation until the foundation reaches a yield point of the elastic layer. 12 : The method according to claim 1 , wherein the melting is made by a selective energy supply according to which the energy is absorbed by the foundation rather than by the strained elastic layer with a ratio of 100/1. 13 : The method according to claim 11 , wherein the melting is made by a selective energy supply according to which the energy is absorbed by the foundation rather than by the strained elastic layer with a ratio of 1000/1. 14 : The method according to claim 11 , wherein a duration of each of the melting and solidification is lower than 1 second. 15 : The method according to claim 11 , wherein a duration of each of the melting and solidification is lower than 1 microsecond. 16 : The method according to claim 11 , wherein a thermally insulating layer is inserted between the foundation and the rigid substrate. 17 : The method according to claim 11 , wherein, the foundation is electrically conducting and inserted between electrically insulating materials, and the melting of the at least part of the foundation is made by a thermal energy supply making use of Joule effect. 18 : The method according to claim 11 , wherein the foundation is inserted between electrically conducting materials and has a resistivity higher than that of the electrically conducting materials, and the melting of the at least part of the foundation is made by a thermal energy supply making use of a resistive heating. 19 : The method according to claim 11 , wherein rupture of the elastic layer is accompanied by an eruption of nanoscale balls, and further comprising collecting the nanoscale balls. 20 : The method according to claim 11 , wherein the strained elastic layer initially has a stress having a discontinuity in the plane of the layer. 21 : The method according to claim 20 , further comprising creating patterns at a surface of the strained elastic layer and/or of the foundation to induce the discontinuity. 22 : A nanoscale object obtained by the method according to claim 11 following rupture of the elastic layer.

Assignees

Inventors

Classifications

  • Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

  • Etching of wafers, substrates or parts of devices · CPC title

  • B82B3/0033Primary

    Manufacture or treatment of substrate-free structures, i.e. not connected to any support · CPC title

  • C03B23/02Primary

    Re-forming glass sheets · CPC title

  • B29C61/00Primary

    Shaping by liberation of internal stresses; Making preforms having internal stresses; Apparatus therefor (for surface shaping B29C59/18; for lining articles B29C63/38; for joining preformed parts B29C65/66 {; for packaging B65B53/00; connecting arrangements or other fittings for plastics pipes using shrink-down material F16L47/22, electrical connections insulated using heat shrinking insulating sleeves H01R4/72; cable junctions protected by sleeves H02G15/18}) · CPC title

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What does patent US2016257597A1 cover?
A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-p…
Who is the assignee on this patent?
Commissariat à l'énergie atomique et aux énergies alternatives, Commissariat Energie Atomique
What technology area does this patent fall under?
Primary CPC classification B82B3/0033. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Thu Sep 08 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).