Antibacterial medical implant surface
US-2018272048-A1 · Sep 27, 2018 · US
US2016257597A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016257597-A1 |
| Application number | US-201415028836-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 16, 2014 |
| Priority date | Oct 17, 2013 |
| Publication date | Sep 8, 2016 |
| Grant date | — |
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A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method reiterating: melting the foundation for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting generating a simultaneous deformation of the elastic layer and of the foundation and a localized contact between the elastic layer and the rigid substrate insulating the regions from the foundation; solidifying the foundation to bring the foundation back to the solid state; until the foundation reaches yield point of the elastic layer.
Opening claim text (preview).
1 - 10 . (canceled) 11 : A method for manufacturing a nanoscale object from a structure including a strained elastic layer on a foundation in a solid state present at a surface of a rigid substrate, the method comprising: melting the foundation to bring the foundation to a liquid state for a duration higher than or equal to 50 ns, thickness of the foundation being at least 20 nm and lower than a predetermined thickness corresponding to a theoretical peak-to-peak amplitude of wrinkles, the melting resulting in a stress relaxation of the elastic layer which generates a simultaneous deformation, by formation of wrinkles, of the elastic layer and of the foundation, the formation of the wrinkles being accompanied by a localized contact between the elastic layer and the rigid substrate separating regions of the foundation; solidifying the foundation to bring the foundation back to a solid state, the solidification forming a solid structure having wrinkles at the surface; the melting and solidification being reiterated to increase an interval between separated regions of the foundation until the foundation reaches a yield point of the elastic layer. 12 : The method according to claim 1 , wherein the melting is made by a selective energy supply according to which the energy is absorbed by the foundation rather than by the strained elastic layer with a ratio of 100/1. 13 : The method according to claim 11 , wherein the melting is made by a selective energy supply according to which the energy is absorbed by the foundation rather than by the strained elastic layer with a ratio of 1000/1. 14 : The method according to claim 11 , wherein a duration of each of the melting and solidification is lower than 1 second. 15 : The method according to claim 11 , wherein a duration of each of the melting and solidification is lower than 1 microsecond. 16 : The method according to claim 11 , wherein a thermally insulating layer is inserted between the foundation and the rigid substrate. 17 : The method according to claim 11 , wherein, the foundation is electrically conducting and inserted between electrically insulating materials, and the melting of the at least part of the foundation is made by a thermal energy supply making use of Joule effect. 18 : The method according to claim 11 , wherein the foundation is inserted between electrically conducting materials and has a resistivity higher than that of the electrically conducting materials, and the melting of the at least part of the foundation is made by a thermal energy supply making use of a resistive heating. 19 : The method according to claim 11 , wherein rupture of the elastic layer is accompanied by an eruption of nanoscale balls, and further comprising collecting the nanoscale balls. 20 : The method according to claim 11 , wherein the strained elastic layer initially has a stress having a discontinuity in the plane of the layer. 21 : The method according to claim 20 , further comprising creating patterns at a surface of the strained elastic layer and/or of the foundation to induce the discontinuity. 22 : A nanoscale object obtained by the method according to claim 11 following rupture of the elastic layer.
Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title
Etching of wafers, substrates or parts of devices · CPC title
Manufacture or treatment of substrate-free structures, i.e. not connected to any support · CPC title
Re-forming glass sheets · CPC title
Shaping by liberation of internal stresses; Making preforms having internal stresses; Apparatus therefor (for surface shaping B29C59/18; for lining articles B29C63/38; for joining preformed parts B29C65/66 {; for packaging B65B53/00; connecting arrangements or other fittings for plastics pipes using shrink-down material F16L47/22, electrical connections insulated using heat shrinking insulating sleeves H01R4/72; cable junctions protected by sleeves H02G15/18}) · CPC title
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