Power-module substrate with heat-sink and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-2016254209-A1
Application number	US-201415028173-A
Country	US
Kind code	A1
Filing date	Oct 8, 2014
Priority date	Oct 10, 2013
Publication date	Sep 1, 2016
Grant date	—

Abstract

A maximum length of a heat sink is set as “L” and a warp amount of the heat sink is set as “Z”; the warp amount “Z” is set as a positive value if a bonded surface of the heat sink to a metal layer is deformed to be concave or the warp amount “Z” is set as a negative value if the bonded surface is deformed to be convex; a ratio Z/L of the maximum length “L” and the warp amount “Z” measured at 25° C. is in a range not smaller than −0.005 and not larger than 0.005, and the ratio Z/L is in the range not smaller than −0.005 and not larger than 0.005 even when it is heated to 280° C. and then cooled to 25° C.

First claim

1 . A power-module substrate with heat-sink comprising:
a power-module substrate provided with a ceramic substrate, a circuit layer provided on one surface of the ceramic substrate, and a metal layer made of aluminum of purity not lower than 99% provided on another surface of the ceramic substrate; and a heat sink made of aluminum alloy having a larger yield stress than that of the metal layer and bonded on the metal layer of the power-module substrate, wherein a maximum length of the heat sink is set as “L” and a warp amount of the heat sink is set as “Z”; the warp amount “Z” is set as a positive value if a bonded surface of the heat sink on the metal layer is deformed to be concave; or is set as a negative value if the bonded surface is deformed to be convex; a ratio Z/L of the maximum length “L” and the warp amount “Z” measured at 25° C. is in a range not smaller than −0.005 and not larger than 0.005, and the ratio Z/L is in the range not smaller than −0.005 and not larger than 0.005 even when it is heated to 280° C. and then cooled to 25° C.

2 . The power-module substrate with heat-sink according to claim 1 , wherein a difference ΔZ/L between a maximum value and a minimum value of the ratio Z/L when the temperature is varied from 25° C. to 280° C. is not larger than 0.005.

3 . A manufacturing method of the power-module substrate with heat-sink according claim 1 , comprising:
laminating the power-module substrate and the heat sink; heating in a state in which the bonded surface of the heat sink is deformed to concavely warp; and cooling in a deformed state so as to bond the metal layer of the power-module substrate and the heat sink.

4 . A power-module substrate with heat-sink comprising:
a power-module substrate provided with a ceramic substrate, a circuit layer provided on one surface of the ceramic substrate, and a metal layer made of aluminum of purity not lower than 99% provided on another surface of the ceramic substrate; and a heat sink made of copper or copper alloy having linear-expansion coefficient not smaller than 15×10 −6 /K and not larger than 22×10 −6 /K and bonded on the metal layer of the power-module substrate, wherein a maximum length of the heat sink is set as “L” and a warp amount of the heat sink is set as “Z”; the warp amount “Z” is set as a positive value if a bonded surface of the heat sink on the metal layer is deformed to be concave; or is set as a negative value if the bonded surface is deformed to be convex; a ratio Z/L of the maximum length “L” and the warp amount “Z” measured at 25° C. is in a range not smaller than −0.015 or not larger than 0.01, the ratio Z/L is in the range not smaller than −0.015 or not larger than 0.01 even if it is heated to 280° C. and then cooled to 25° C.

5 . The power-module substrate with heat-sink according to claim 4 , wherein a difference ΔZ/L between a maximum value and a minimum value of the ratio Z/L when the temperature is varied from 25° C. to 280° C. is not larger than 0.015.

6 . A manufacturing method of the power-module substrate with heat-sink according claim 4 , comprising:
laminating the power-module substrate and the heat sink; heating in a state in which the bonded surface of the heat sink is deformed to concavely warp; and cooling in a deformed state so as to bond the power-module substrate and the sink.

7 . A power-module substrate with heat sink comprising:
a power-module substrate including a ceramic substrate, a circuit layer provided on one surface of the ceramic substrate, and a metal layer made of aluminum of purity not lower than 99% provided on another surface of the ceramic substrate; and a heat sink made of material having linear-expansion coefficient of not smaller than 7×10 −6 /K and not larger than 12×10 −6 /K and bonded on the metal layer of the power-module substrate, wherein a maximum length of the heat sink is set as “L” and a warp amount of the heat sink is set as “Z”; the warp amount “Z” is set as a positive value if a bonded surface of the heat sink on the metal layer is deformed to be concave; or is set as a negative value if the bonded surface is deformed to be convex; a ratio Z/L of the maximum length “L” and the warp amount “Z” measured at 25° C. is in a range not smaller than −0.002 and not larger than 0.002, and the ratio Z/L is in the range not smaller than −0.002 and not larger than 0.002 even when it is heated to 280° and then cooled to 25° C.

8 . The power-module substrate with heat-sink according to claim 7 , wherein the heat sink is made from AlSiC matrix composite material, Al graphite composite material, Cu—W alloy, or Cu—Mo alloy.

9 . The power-module substrate with heat-sink according to claim 7 , wherein a difference ΔZ/L between a maximum value and a minimum value of the ratio Z/L when the temperature is varied from 25° C. to 280° C. is not larger than 0.002.

10 . A manufacturing method of the power-module substrate with heat-sink according claim 7 , comprising:
laminating the power-module substrate and the heat sink; heating in a state in which the bonded surface of the heat sink is deformed to concavely warp; and cooling in a deformed state so as to bond power-module substrate and the heat sink.

Assignees

• Mitsubishi Materials Corp

Inventors

• Oohiraki Tomoya
• Oi Sotaro

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/692

  Ceramics or glasses · CPC title

• H10W72/071

  Connecting or disconnecting · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H10W70/02

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title