Compound semiconductor structure

Patent metadata

Field	Value
Publication number	US-2016254147-A1
Application number	US-201615149913-A
Country	US
Kind code	A1
Filing date	May 9, 2016
Priority date	Aug 27, 2013
Publication date	Sep 1, 2016
Grant date	—

Abstract

A method for fabricating semiconductor structure comprises the steps of providing a substrate including a first crystalline semiconductor material, patterning an opening in a dielectric layer above the substrate, the opening having a bottom, forming a crystalline interlayer on the substrate at least partially covering the bottom, and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening. The crystalline semiconductor materials are lattice mismatched, and the crystalline interlayer comprises an oxygen compound.

First claim

What is claimed is:

1 . A method for fabricating semiconductor structure comprising:
providing a substrate including a first crystalline semiconductor material; patterning an opening in a dielectric layer above the substrate, the opening having a bottom; forming a crystalline interlayer on the substrate at least partially covering the bottom; and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening;
wherein:
the first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched; and
the crystalline interlayer comprises an oxygen compound.

2 . The method of claim 1 , further comprising forming the dielectric layer on the substrate.

3 . The method of claim 1 , further comprising forming the dielectric layer on the crystalline interlayer.

4 . The method of claim 1 , wherein the opening is patterned in the dielectric layer thereby forming sidewalls of the opening.

5 . The method of claim 1 , wherein the step of patterning the opening is performed after forming the crystalline interlayer.

6 . The method of claim 1 , wherein growing the second crystalline semiconductor material on the crystalline interlayer comprises forming islands of said second crystalline semiconductor material on the crystalline interlayer.

7 . The method of claim 6 , further comprising coalescing the islands thereby forming an epitaxial film.

8 . The method of claim 1 , wherein growing the second crystalline semiconductor material on the crystalline interlayer comprises forming a single island of said second crystalline semiconductor material on the crystalline interlayer in the opening.

9 . The method of claim 1 , further comprising overgrowing the opening with the second crystalline semiconductor material thereby filling the opening.

10 . The method of claim 9 , further comprising, after filling the opening with the second crystalline semiconductor material, planarizing overgrown second crystalline semiconductor material.

11 . The method of claim 1 , further comprising processing the second crystalline semiconductor material for fabricating electronic or optical devices.

Assignees

• Globalfoundries Inc

Inventors

• Abel Stefan
• Czornomaz Lukas
• Fompeyrine Jean
• El Kazzi Mario

Classifications

• H10P14/3802

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2905 Primary

  Silicon, silicon germanium or germanium · CPC title