Surface-emitting semiconductor laser, surface-emitting semiconductor laser array, surface-emitting semiconductor laser device, optical transmission device, and information processing device

Patent metadata

Field	Value
Publication number	US-2016248228-A1
Application number	US-201514844702-A
Country	US
Kind code	A1
Filing date	Sep 3, 2015
Priority date	Feb 25, 2015
Publication date	Aug 25, 2016
Grant date	—

Abstract

A surface-emitting semiconductor laser includes a substrate; a first semiconductor multilayer film reflector stacked on the substrate; an active region stacked on or above the first semiconductor multilayer film reflector; a second semiconductor multilayer film reflector stacked on or above the active layer; a cavity extension region interposed between the first semiconductor multilayer film reflector and the active region or between the second semiconductor multilayer film reflector and the active region; and a carrier block layer interposed between the cavity extension region and the active region. The carrier block layer includes a first carrier block layer and a second carrier block layer. The first and second carrier block layers have a larger band gap than the active region and the cavity extension region. The first carrier block layer has a larger band gap than the second carrier block layer.

First claim

What is claimed is:

1 . A surface-emitting semiconductor laser comprising:
a substrate; a first semiconductor multilayer film reflector stacked on the substrate, the first semiconductor multilayer film reflector including alternating pairs of a high-refractive-index layer having a higher refractive index and a low-refractive-index layer having a lower refractive index; an active region stacked on or above the first semiconductor multilayer film reflector; a second semiconductor multilayer film reflector stacked on or above the active layer, the second semiconductor multilayer film reflector including alternating pairs of a high-refractive-index layer having a higher refractive index and a low-refractive-index layer having a lower refractive index; a cavity extension region interposed between the first semiconductor multilayer film reflector and the active region or between the second semiconductor multilayer film reflector and the active region, the cavity extension region having an optical thickness larger than an oscillation wavelength, the cavity extension region enabling a cavity length to be increased; and a carrier block layer interposed between the cavity extension region and the active region, the carrier block layer including a first carrier block layer and a second carrier block layer, the first and second carrier block layers having a larger band gap than the active region and the cavity extension region, the first carrier block layer having a larger band gap than the second carrier block layer.

2 . The surface-emitting semiconductor laser according to claim 1 , further comprising:
an Al-containing current confinement layer having a larger thickness than the first carrier block layer, wherein an Al content in the first carrier block layer is equal to or higher than an Al content in the current confinement layer.

3 . The surface-emitting semiconductor laser according to claim 1 ,
wherein the second carrier block layer has a larger thickness than the first carrier block layer.

4 . The surface-emitting semiconductor laser according to claim 1 ,
wherein the first carrier block layer has a higher impurity concentration than the second carrier block layer.

5 . A surface-emitting semiconductor laser comprising:
a substrate; a first semiconductor multilayer film reflector stacked on the substrate, the first semiconductor multilayer film reflector including alternating pairs of a high-refractive-index layer having a higher refractive index and a low-refractive-index layer having a lower refractive index; an active region stacked on or above the first semiconductor multilayer film reflector; a second semiconductor multilayer film reflector stacked on or above the active layer, the second semiconductor multilayer film reflector including alternating pairs of a high-refractive-index layer having a higher refractive index and a low-refractive-index layer having a lower refractive index; a cavity extension region interposed between the first semiconductor multilayer film reflector and the active region or between the second semiconductor multilayer film reflector and the active region, the cavity extension region having an optical thickness larger than an oscillation wavelength, the cavity extension region enabling a cavity length to be increased; and a carrier block layer interposed between the cavity extension region and the active region, the carrier block layer including a first carrier block layer and a second carrier block layer, the first and second carrier block layers having a larger band gap than the active region and the cavity extension region, the first carrier block layer having a higher carrier concentration than the second carrier block layer.

6 . The surface-emitting semiconductor laser according to claim 4 ,
wherein the first carrier block layer is located within a region where the light intensity of a standing wave is lower than half the maximum light intensity of the standing wave, the standing wave being formed between the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

7 . The surface-emitting semiconductor laser according to claim 5 ,
wherein the first carrier block layer is located within a region where the light intensity of a standing wave is lower than half the maximum light intensity of the standing wave, the standing wave being formed between the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

8 . The surface-emitting semiconductor laser according to claim 4 ,
wherein the first carrier block layer is located at a node of a standing wave formed between the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

9 . The surface-emitting semiconductor laser according to claim 5 ,
wherein the first carrier block layer is located at a node of a standing wave formed between the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

10 . The surface-emitting semiconductor laser according to claim 4 ,
wherein the second carrier block layer is interposed between the active region and the first carrier block layer, and wherein a boundary between the second carrier block layer and the active region is located within a region where the light intensity of a standing wave is higher than half the maximum light intensity of the standing wave, the standing wave being formed between the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

11 . The surface-emitting semiconductor laser according to claim 5 ,
wherein the second carrier block layer is interposed between the active region and the first carrier block layer, and wherein a boundary between the second carrier block layer and the active region is located within a region where the light intensity of a standing wave is higher than half the maximum light intensity of the standing wave, the standing wave being formed between the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

12 . The surface-emitting semiconductor laser according to claim 4 ,
wherein the second carrier block layer is interposed between the active region and the first carrier block layer, and wherein a boundary between the second carrier block layer and the active region is located at an antinode of a standing wave formed between the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

13 . The surface-emitting semiconductor laser according to claim 5 ,
wherein the second carrier block layer is interposed between the active region and the first carrier block layer, and wherein a boundary between the second carrier block layer and the active region is located at an antinode of a standing wave formed between the first semiconductor multilayer film reflector and the second semiconductor multilayer film reflector.

14 . The surface-emitting semiconductor laser according to claim 6 ,
wherein the second carrier block layer is interposed both between the first carrier block layer and the active region and between the first carrier block layer and the cavity extension region, and wherein a boundary between the active-region-side second carrier block layer and the active region and a boundary between the cavity-extension-region-side of the second carrier block layer and the cavity extension region are each located within a region where the light intensity of a standing wave is higher than half the maximum li

Assignees

• Fuji Xerox Co Ltd

Inventors

• Kondo Takashi
• Murakami Akemi
• Takeda Kazutaka
• Jogan Naoki
• Hayakawa Junichiro
• Sakurai Jun

Classifications

• H01S5/18377

  comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers · CPC title

• H01S5/183

  having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] · CPC title

• H01S5/222 Primary

  having a refractive index lower than that of the cladding layers or outer guiding layers · CPC title

• G02B19/0052 Primary

  the light source comprising a laser diode (coupling into light guides using intermediate optical elements G02B6/4204; semiconductor lasers having optical devices external to the laser cavity H01S5/005) · CPC title

• G02B26/10 Primary

  Scanning systems · CPC title