Peeling Method and Method of Manufacturing Semiconductor Device

Patent metadata

Field	Value
Publication number	US-2016248013-A1
Application number	US-201615143791-A
Country	US
Kind code	A1
Filing date	May 2, 2016
Priority date	Aug 22, 2001
Publication date	Aug 25, 2016
Grant date	—

Abstract

There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer ( 11 ) and a second material layer ( 12 ) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer ( 12 ) or an interface thereof.

First claim

1 . (canceled)

2 . A method of manufacturing a display device comprising:
forming an organic material layer over a first substrate; forming a first insulating film over the organic material layer; forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer; forming a second insulating film over the thin film transistor; forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor; forming a light emitting layer over the pixel electrode, the light emitting layer comprising an organic material; forming a second electrode over the light emitting layer; forming a third insulating film over the second electrode; attaching a first resin film to the third insulating film by an adhesive layer between the first resin film and the third insulating film; irradiating the organic material layer with a laser light through the first substrate after attaching the first resin film; separating the first substrate from the organic material layer after the irradiation with the laser light; and attaching a second resin film to the organic material layer by a second adhesive layer between the second resin film and the organic material layer.

3 . The method according to claim 2 , wherein the organic material layer has a compressive stress.

4 . The method according to claim 2 , further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress.

5 . The method according to claim 2 , wherein the laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer.

6 . The method according to claim 2 , wherein only a portion of the organic material layer is irradiated with the laser light.

7 . A method of manufacturing a display device comprising:
forming an organic material layer over a first substrate; forming a first insulating film over the organic material layer; forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer; forming a second insulating film over the thin film transistor; forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor; irradiating the organic material layer with a linear shape laser light through the first substrate, wherein the organic material layer is scanned with the linear shape laser light along a first direction; separating the first substrate from the organic material layer after the irradiation with the linear shape laser light, wherein the step of separating the first substrate is performed along the first direction; and attaching a resin film to the organic material layer by an adhesive layer between the resin film and the organic material layer.

8 . The method according to claim 7 , wherein the organic material layer has a compressive stress.

9 . The method according to claim 7 , further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress.

10 . The method according to claim 7 , wherein the linear shape laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer.

11 . A method of manufacturing a display device comprising:
forming an organic material layer over a first substrate; forming a first insulating film over the organic material layer; forming a thin film transistor over the first insulating film, the thin film transistor comprising a semiconductor layer including a channel forming region, a gate electrode and a gate insulating layer between the gate electrode and the semiconductor layer; forming a second insulating film over the thin film transistor; forming a pixel electrode over the second insulating film, wherein the pixel electrode is electrically connected to the thin film transistor; forming a light emitting layer over the pixel electrode, the light emitting layer comprising an organic material; forming a second electrode over the light emitting layer; forming a third insulating film over the second electrode, the third insulating film comprising a material selected from the group consisting of aluminum nitride, aluminum nitride oxide, aluminum oxynitride, and aluminum oxide; attaching a first resin film to the third insulating film by an adhesive layer between the first resin film and the third insulating film; irradiating the organic material layer with a laser light through the first substrate after attaching the first resin film; separating the first substrate from the organic material layer after the irradiation with the laser light; and attaching a second resin film to the organic material layer by a second adhesive layer between the second resin film and the organic material layer.

12 . The method according to claim 11 , wherein the organic material layer has a compressive stress.

13 . The method according to claim 11 , further comprising a second material layer over the first substrate before forming the organic material layer, wherein the organic material layer has a compressive stress and the second material layer has a tensile stress.

14 . The method according to claim 11 , wherein the laser light is directed to a portion of the organic material layer, the portion being distant from an edge of the organic material layer.

15 . The method according to claim 11 , wherein only a portion of the organic material layer is irradiated with the laser light.

Assignees

• Semiconductor Energy Lab

Inventors

• Takayama Toru
• Maruyama Junya
• Yamazaki Shunpei

Classifications

• H10P36/03

  within silicon bodies · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914

  using bonding · CPC title

• B32B7/06

  permitting easy separation · CPC title

• Y10T156/1137

  Using air blast directly against work during delaminating · CPC title