Light emitting diode

Patent metadata

Field	Value
Publication number	US-2016247971-A1
Application number	US-201615145528-A
Country	US
Kind code	A1
Filing date	May 3, 2016
Priority date	Sep 26, 2014
Publication date	Aug 25, 2016
Grant date	—

Abstract

A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.

First claim

What is claimed is:

1 . A light emitting diode, comprising:
a light emitting structure comprising:
a second conductive type semiconductor layer;
a first conductive type semiconductor layer disposed on the second conductive type semiconductor layer; and
an active layer disposed between the first and second conductive type semiconductor layers;
a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer; a reflective metal layer disposed on the light emitting structure and contacting a portion of the light emitting structure; a cover metal layer disposed on the reflective metal layer and contacting at least a portion of the reflective metal layer; a first insulation layer disposed on the cover metal layer and covering the reflective metal layer and the cover metal layer; an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole; an electrode pad disposed on the light emitting structure; and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, wherein the electrode pad overlaps the cover metal layer.

2 . The light emitting diode according to claim 1 , further comprising:
a pad installation section spaced apart from the light emitting structure by the first hole, wherein the cover metal layer is disposed on a portion of the light emitting structure and a portion of the pad installation section.

3 . The light emitting diode according to claim 2 , wherein the cover metal layer is disposed along peripheries of the light emitting structure and the pad installation section.

4 . The light emitting diode according to claim 3 , wherein the cover metal layer covers a periphery of the reflective metal layer.

5 . The light emitting diode according to claim 1 , wherein the electrode layer fills the second hole and ohmic contacts with the first conductive type semiconductor layer.

6 . The light emitting diode according to claim 1 , wherein a region of the first insulation layer in which the second hole is not formed is disposed on the reflective metal layer.

7 . A light emitting diode, comprising:
a light emitting structure comprising:
a second conductive type semiconductor layer;
a first conductive type semiconductor layer disposed on the second conductive type semiconductor layer; and
an active layer disposed between the first and second conductive type semiconductor layers;
a first hole and a second hole formed through the active layer and the second conductive type semiconductor layer to expose the first conductive type semiconductor layer; a metal layer disposed on the light emitting structure and covering a portion of the light emitting structure; a first insulation layer disposed on the metal layer and covering the metal layer; an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the first and second holes; and an electrode pad electrically connected to the metal layer, wherein the electrode layer filling the second hole is a line electrode, the line electrode being disposed along a periphery of the light emitting structure in one direction.

8 . The light emitting diode according to claim 7 , wherein:
the electrode layer filling the first hole is a first electrode; and the line electrode has a smaller width than the first electrode.

9 . The light emitting diode according to claim 7 , wherein the metal layer is disposed inside the line electrode in plan view.

10 . The light emitting diode according to claim 7 , wherein the line electrode is disposed on the light emitting structure in a region in which the electrode pad is not formed.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Lee Joon Hee
• Lee Mi Hee

Classifications

• H10H20/835

  Reflective materials · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/8312 Primary

  extending at least partially through the bodies · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/82 Primary

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title