Rf power delivery regulation for processing substrates
US-2017098527-A1 · Apr 6, 2017 · US
Plasma processing method and plasma processing apparatus
US2016247666A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016247666-A1 |
| Application number | US-201615018981-A |
| Country | US |
| Kind code | A1 |
| Filing date | Feb 9, 2016 |
| Priority date | Feb 23, 2015 |
| Publication date | Aug 25, 2016 |
| Grant date | — |
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Abstract
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A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.
First claim
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What is claimed is: 1 . A plasma processing method using a plasma processing apparatus including a process chamber, a mounting table provided in the process chamber, and an electrode provided to face the mounting table, of plasma processing a substrate on the mounting table, the method comprising: applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias. 2 . The plasma processing method according to claim 1 , wherein in the controlling, the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias are controlled to generate the predetermined phase difference capable of suppressing generation of a standing wave of high harmonics waves generated due to superimpose of the pulse waves. 3 . The plasma processing method according to claim 1 , further comprising: providing gas containing hydrogen bromide (HBr) gas, nitrogen trifluoride (NF 3 ) gas and oxygen (O 2 ) gas, or gas containing hydrogen bromide gas, CF based gas and oxygen gas in the process chamber, and etching a polysilicon film formed on the substrate using a silicon oxide film formed on the polysilicon film as a mask. 4 . The plasma processing method according to claim 1 , wherein frequency of the high frequency electric power for plasma generation is within a range of 100 MHz to 150 MHz and frequency of the high frequency electric power for bias is within range of 400 kHz to 13.56 MHz. 5 . A plasma processing apparatus comprising: a process chamber; a mounting table provided in the process chamber; an electrode provided to face the mounting table; and a control unit that applies a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table, and controls the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias such that a predetermined phase difference is generated between the pulse wave of the high frequency electric power for plasma generation and the pulse wave of the high frequency electric power for bias, and a duty ratio of the high frequency electric power for plasma generation becomes greater than or equal to a duty ratio of the high frequency electric power for bias.
Assignees
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Classifications
- H01J37/32146Primary
Amplitude modulation, includes pulsing · CPC title
Workpiece holder · CPC title
Etching · CPC title
Relative arrangement or disposition of electrodes; moving means · CPC title
Circuits specially adapted for controlling the RF discharge · CPC title
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- What does patent US2016247666A1 cover?
- A plasma processing method includes applying a pulse wave of high frequency electric power for plasma generation and a pulse wave of high frequency electric power for bias whose frequency is lower than that of the high frequency electric power for plasma generation on the mounting table; and controlling the pulse wave of the high frequency electric power for plasma generation and the pulse wave…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01J37/32146. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Aug 25 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).