Magnetoresistive Tunnel Junction

Patent metadata

Field	Value
Publication number	US-2016240780-A1
Application number	US-201615138023-A
Country	US
Kind code	A1
Filing date	Apr 25, 2016
Priority date	Nov 13, 2012
Publication date	Aug 18, 2016
Grant date	—

Abstract

A Magnetoresistive Tunnel Junction (MTJ) includes a magnetic reference layer disposed between a first electrode and a resistive layer. The junction also includes a magnetic free layer disposed between the resistive layer and a second electrode. The surface area of the free layer is less than the surface area of the reference layer.

First claim

What is claimed is:

1 . A method for forming a Magnetoresistive Tunnel Junction (MJT), the method comprising:
disposing a magnetic, substantially circular reference layer on a first electrode; disposing a resistive layer onto the reference layer; disposing a magnetic, substantially circular free layer on the resistive layer; and disposing a second electrode so as to be connected to the free layer; wherein the reference layer produces a first magnetic core in a first direction, and the free layer produces a second magnetic core in a second direction, different from the first direction.

2 . The method of claim 1 , wherein a radius of the reference layer in greater than five times a radius of the free layer divided by three.

3 . The method of claim 1 , wherein a center of the free layer is offset from a center of the reference layer.

4 . The method of claim 3 , wherein the offset distance is greater than or equal to one fourth a radius of the reference layer plus one fourth a radius of the free layer.

5 . The method of claim 1 , wherein a radius of the free layer is less than a radius of the reference layer.

6 . The method of claim 1 further comprising forming the first electrode using physical vapor deposition.

7 . The method of claim 1 , wherein disposing the resistive layer includes forming the resistive layer with a thickness from about 5 Angstroms to about 15 Angstroms.

8 . The method of claim 1 further comprising aligning a magnetic moment direction of the free layer with a magnetic moment direction of the magnetic layer.

9 . A method for forming a Magnetoresistive Tunnel Junction (MTJ), the method comprising:
positioning a magnetic reference layer between a first electrode and a resistive layer, the magnetic reference layer having a first magnetic vertical core; and positioning a magnetic free layer between the resistive layer and a second electrode, the magnetic free layer having a second magnetic vertical core; wherein the magnetic reference layer and the magnetic free layer are positioned so the first magnetic vertical core is prevented from overlapping with the second magnetic vertical core.

10 . The method of claim 9 , wherein the magnetic reference layer and the magnetic free layer are substantially circular in shape.

11 . The method of claim 9 , wherein a radius of the magnetic free layer is sufficiently smaller than a radius of the magnetic reference layer so as to reduce a dipole interaction between the magnetic free layer and the magnetic reference layer to a predetermined level.

12 . The method of claim 9 , wherein a radius of the magnetic reference layer is greater than five times a radius of the magnetic free layer divided by three.

13 . The method of claim 9 further comprising positioning at least one additional magnetic free layer over the magnetic reference layer.

14 . The method of claim 9 further comprising connecting a second electrode to the magnetic free layer.

15 . A method for forming a Magnetoresistive Tunnel Junction (MTJ), the method comprising:
connecting a magnetic reference layer having a first magnetic vertical core to a first electrode; positioning a resistive layer over the magnetic reference layer; and positioning a magnetic free layer having a second magnetic vertical core over the reference layer, wherein the magnetic free layer is positioned so that the second magnetic vertical core does not overlap the first magnetic vertical core.

16 . The method of claim 15 further comprising positioning at least one additional magnetic free layer over the magnetic reference layer.

17 . The method of claim 15 further comprising connecting a second electrode to the magnetic free layer.

18 . The method of claim 16 further comprising connecting a second electrode to the magnetic free layer and a third electrode to the at least one additional magnetic free layer.

19 . The method of claim 15 , wherein the first magnetic vertical core and the second magnetic vertical core are not concentric, and an entirety of the magnetic free layer is positioned directly above the magnetic reference layer.

20 . The method of claim 15 , wherein a radius of the magnetic free layer is sufficiently smaller than a radius of the magnetic reference layer so as to reduce a dipole interaction between the magnetic free layer and the magnetic reference layer to a predetermined level.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yu Chwen

Classifications

• H01L43/08

  Electricity · mapped topic

• H01L45/1608

  Electricity · mapped topic

• H01L45/16 Primary

  Electricity · mapped topic

• H01L43/02

  Electricity · mapped topic

• H10N50/10 Primary

  Magnetoresistive devices · CPC title