Semiconductor light-emitting device

Patent metadata

Field	Value
Publication number	US-2016240746-A1
Application number	US-201514985784-A
Country	US
Kind code	A1
Filing date	Dec 31, 2015
Priority date	Feb 13, 2015
Publication date	Aug 18, 2016
Grant date	—

Abstract

A semiconductor light-emitting device includes: a package substrate having a mounting surface on which a first circuit pattern and a second circuit pattern are disposed; a semiconductor LED chip mounted on the mounting surface, having a first surface which faces the mounting surface and on which a first electrode and a second electrode are disposed, a second surface opposing the first surface, and side surfaces located between the first surface and the second surface, the first electrode and the second electrode being connected to the first circuit pattern and the second circuit pattern, respectively; a wavelength conversion film disposed on the second surface; and a side surface inclined portion disposed on the side surfaces of the semiconductor LED chip, providing inclined surfaces, and including a light-transmitting resin containing a wavelength conversion material.

First claim

What is claimed is:

1 . A semiconductor light-emitting device comprising:
a package substrate having a mounting surface on which a first circuit pattern and a second circuit pattern are disposed; a semiconductor light-emitting diode (LED) chip mounted on the mounting surface of the package substrate, having a first surface which faces the mounting surface and on which a first electrode and a second electrode are disposed, a second surface opposing the first surface, and side surfaces located between the first surface and the second surface, the first electrode and the second electrode being connected to the first circuit pattern and the second circuit pattern, respectively; a wavelength conversion film disposed on the second surface of the semiconductor LED chip; and a side surface inclined portion disposed on the side surfaces of the semiconductor LED chip, providing surfaces inclined inwardly toward the mounting surface of the package substrate, and comprising a light-transmitting resin containing a wavelength conversion material.

2 . The semiconductor light-emitting device of claim 1 , further comprising a light-transmitting adhesive layer disposed between the wavelength conversion film and the semiconductor LED chip.

3 . The semiconductor light-emitting device of claim 2 , wherein the light-transmitting adhesive layer comprises a same light-transmitting resin as the light-transmitting resin of the side surface inclined portion.

4 . The semiconductor light-emitting device of claim 3 , wherein the light-transmitting adhesive layer comprises a same wavelength conversion material as the wavelength conversion material of the side surface inclined portion.

5 . The semiconductor light-emitting device of claim 1 , wherein the wavelength conversion material of the side surface inclined portion contains a same material as a material contained in the wavelength conversion film.

6 . The semiconductor light-emitting device of claim 1 , wherein the wavelength conversion film has an area greater than an area of the semiconductor LED chip.

7 . The semiconductor light-emitting device of claim 1 , further comprising a side surface reflection portion which is disposed on the mounting surface of the package substrate to surround the side inclined portion and comprises the inwardly inclined surfaces by contacting the side surface inclined portion, and
wherein the inwardly inclined surfaces are configured to guide light emitted from the semiconductor LED chip toward the wavelength conversion film.

8 . The semiconductor light-emitting device of claim 7 , wherein the side surface reflection portion comprises a light-transmitting resin in which a reflective powder is contained.

9 . The semiconductor light-emitting device of claim 7 , wherein the package substrate comprises a cup-shaped reflective structure disposed on the mounting face to surround the side surface reflection portion.

10 . The semiconductor light-emitting device of claim 1 , further comprising an optical lens disposed on the wavelength conversion film.

11 . A semiconductor light-emitting device comprising:
a package substrate having a mounting surface on which a first circuit pattern and a second circuit pattern are disposed; a semiconductor light-emitting diode (LED) chip mounted on the mounting surface of the package substrate, having a first surface which faces the mounting surface and on which a first electrode and a second electrode are disposed, a second surface opposing the first surface, and side surfaces located between the first surface and the second surface, the first electrode and the second electrode being connected to the first circuit pattern and the second circuit pattern, respectively; a wavelength conversion film disposed on the second surface of the semiconductor LED chip; a side surface inclined portion disposed on the side surfaces of the semiconductor LED chip, providing surfaces inclined inwardly toward the mounting surface of the package substrate, and comprising a light-transmitting resin containing a light dispersing material; and a side surface reflection portion disposed on the mounting surface of the package substrate to surround the side surface inclined portion.

12 . The semiconductor light-emitting device of claim 11 , wherein the light dispersing material contains at least one selected from a group consisting of SiO 2 , Al 2 O 3 , and TiO 2 .

13 . The semiconductor light-emitting device of claim 11 , further comprising a light-transmitting adhesive layer disposed between the wavelength conversion film and the semiconductor LED chip,
wherein the light-transmitting adhesive layer comprises a same material as the side surface inclined portion.

14 . The semiconductor light-emitting device of claim 11 , wherein the side surface reflection portion comprises a light-transmitting resin in which a reflective powder is contained, and
wherein the side surface reflection portion further comprises the inwardly inclined surfaces formed by contacting the side surface inclined portion and configured to guide light emitted from the semiconductor LED chip toward the wavelength conversion film.

15 . The semiconductor light-emitting device of claim 11 , wherein the wavelength conversion film has an area greater than an area of the semiconductor LED chip.

16 . A semiconductor light-emitting device comprising:
a substrate; a semiconductor light-emitting diode (LED) chip mounted on the substrate, having a first surface which faces the substrate, a second surface opposing the first surface, and side surfaces connecting the first surface and the second surface; a wavelength conversion film disposed on the second surface of the semiconductor LED chip; and a side surface structure disposed on the side surfaces of the semiconductor LED chip configured to reflect light emitted from the semiconductor LED chip toward the wavelength conversion film, and comprising a light-transmitting resin containing a wavelength conversion material or a light dispersing material which is different from the wavelength conversion material.

17 . The semiconductor light-emitting device of claim 1 , wherein, in a case that the light-transmitting resin contains the light dispersing material, the light-transmitting resin and the light dispersing material have different refractive indexes.

18 . The semiconductor light-emitting device of claim 1 , wherein the light-transmitting resin has a refractive index selected from with a range of 1.38 to 1.8.

19 . The semiconductor light-emitting device of claim 1 , wherein the wavelength conversion film comprises a yellow phosphor, and the light-transmitting resin comprises a red phosphor or a green phosphor.

20 . The semiconductor light-emitting device of claim 1 , further comprising a light-transmitting adhesive layer disposed between the wavelength conversion film and the semiconductor LED chip,
wherein the light-transmitting adhesive layer and the side surface structure comprises a same material.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yun Mi Jeong
• Song Jong Sup

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/877

  Bump connectors and die-attach connectors · CPC title

• H10H20/83

  Electrodes · CPC title

• H10H20/851 Primary

  Wavelength conversion means · CPC title