Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2016240504-A1
Application number	US-201614990355-A
Country	US
Kind code	A1
Filing date	Jan 7, 2016
Priority date	Feb 17, 2015
Publication date	Aug 18, 2016
Grant date	—

Abstract

A method for manufacturing a semiconductor device includes a first step of forming a first electrode on one main surface side of a semiconductor wafer; a second step of bonding a first film to another main surface side of the semiconductor wafer; a third step of bonding a second film to an outer peripheral portion of the semiconductor wafer by applying pressure to the second film on the semiconductor wafer using a plurality of cylindrical rollers, after the second step; and a fourth step of forming a plating layer on the first electrode on the one main surface side of the semiconductor wafer by a plating process, after the third step.

First claim

What is claimed is:

1 . A method for manufacturing a semiconductor device, comprising:
a first step of forming a first electrode on one main surface side of a semiconductor wafer; a second step of bonding a first film to another main surface side of the semiconductor wafer at a side opposite to the one main surface; a third step of bonding, after the second step, a second film to an outer peripheral portion of the semiconductor wafer by applying pressure to the second film on the semiconductor wafer using a plurality of cylindrical rollers; and a fourth step of forming, after the third step, a plating layer on the first electrode on the one main surface side of the semiconductor wafer by a plating process.

2 . The method for manufacturing a semiconductor device according to claim 1 , wherein a first roller contacting a side surface of the semiconductor wafer through the second film, and second rollers contacting one main surface and another main surface of the semiconductor wafer respectively through the second film, are used as the plurality of rollers.

3 . The method for manufacturing a semiconductor device according to claim 2 , wherein the third step includes:
a first bonding step of pressing and bonding the second film to the side surface of the semiconductor wafer with the first roller; and a second bonding step of bonding an end portion of the second film to the main surface of the semiconductor wafer by sandwiching the end portion between the second roller and the semiconductor wafer in a state in which the second film is bonded to the side surface of the semiconductor wafer.

4 . The method for manufacturing a semiconductor device according to claim 3 , wherein in the second bonding step, the end portion of the second film is sandwiched between the second roller and the semiconductor wafer from a portion of the second film bonded to the side surface of the semiconductor wafer by the first roller.

5 . The method for manufacturing a semiconductor device according to claim 1 , wherein in the third step, the second film is bonded at least one lap around the outer periphery of the semiconductor wafer.

6 . The method for manufacturing a semiconductor device according to claim 5 , wherein in the third step, the second film is bonded so that a finish end portion of the second film on a bonding finish point side in a direction along the outer periphery of the semiconductor wafer overlaps with a start end portion of the second film on a bonding start point side in the direction along the outer periphery of the semiconductor wafer.

7 . The method for manufacturing a semiconductor device according to claim 6 , wherein in the third step, a free end side of the finish end portion of the second film on the bonding finish point side in the direction along the outer periphery of the semiconductor wafer projects outward beyond the side surface of the semiconductor wafer to form a projecting section.

8 . The method for manufacturing a semiconductor device according to claim 7 , further comprising a fifth step of, after the fourth step, holding the projecting section of the second film to separate the second film.

9 . The method for manufacturing a semiconductor device according to claim 2 , wherein the first roller is made of an elastic body, and
a Shore hardness of the first roller is no less than 30 and no more than 90.

10 . The method for manufacturing a semiconductor device according to claim 2 , wherein a pressure applied to the semiconductor wafer by the first roller when bonding the second film is no less than 50 kPa and no more than 250 kPa.

11 . The method for manufacturing a semiconductor device according to claim 2 , wherein the first roller has a V-shaped groove in a portion facing the side surface of the semiconductor wafer.

12 . The method for manufacturing a semiconductor device according to claim 11 , wherein an angle of the groove in the first roller is no less than 30 degrees and no more than 160 degrees.

13 . The method for manufacturing a semiconductor device according to claim 1 , wherein in the third step, the second film is bonded to the outer peripheral portion of the semiconductor wafer so that the second film spans from the one main surface to the another main surface of the semiconductor wafer.

14 . The method for manufacturing a semiconductor device according to claim 1 , wherein in the third step, the second film is bonded to the outer peripheral portion of the semiconductor wafer so that the second film ends on the first film.

15 . The method for manufacturing a semiconductor device according to claim 1 , wherein the fourth step comprises forming a plurality of plating layers successively on the first electrode.

16 . The method for manufacturing a semiconductor device according to claim 1 , wherein the fourth step includes at least a step of forming a nickel layer on the first electrode by an electroless plating process, or a step of forming a nickel layer on the first electrode by an electroplating process.

17 . The method for manufacturing a semiconductor device according to claim 1 , wherein the first step comprises forming the first electrode on the main surface side of the semiconductor device and a second electrode on the another main surface side of the semiconductor wafer, and
in the second step, the first film is bonded on the another main surface side of the semiconductor wafer to cover the second electrode.

Assignees

• Fuji Electric Co Ltd

Inventors

• Sakaguchi Shoji

Classifications

• H10W72/944

  Dispositions of multiple bond pads · CPC title

• H10W72/953

  not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/934

  Cross-sectional shape, i.e. in side view · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title