Charged particle inspection method and charged particle system

Patent metadata

Field	Value
Publication number	US-2016240344-A1
Application number	US-201615137796-A
Country	US
Kind code	A1
Filing date	Apr 25, 2016
Priority date	Sep 6, 2005
Publication date	Aug 18, 2016
Grant date	—

Abstract

The present invention relates to a charged particle system comprising: a charged particle source; a first multi aperture plate; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the second multi aperture plate. The invention further pertains to a particle-optical component configured to change a divergence of a set of charged particle beamlets and a charged particle inspection method comprising inspection of an object using different numbers of charged particle beamlets.

First claim

1 .- 3 . (canceled)

4 . A charged particle beam system, comprising:
a charged particle source configured to generate a beam of charged particles; a field generating arrangement configured to generate at least one of a magnetic or electrostatic field extending over a space traversed by the beam of charged particles; a beam stop disposed downstream of the field generating arrangement, wherein the beam stop includes a multi aperture plate having a plurality of apertures formed therein; and a controller configured to selectively switch the field generating arrangement from a first mode of operation to a second mode of operation, wherein a first field associated with the first mode of operation is different from a second field associated with a second mode of operation; wherein the field generating arrangement and the beam stop are arranged such that the beam of charged particles impinges onto the beam stop when the field generating arrangement is switched to the first mode of operation and that the beam of charged particles bypasses the beam stop when the field generating element is switched to the second mode of operation.

5 . The charge particle beam system of claim 4 , wherein the system is configured to direct beamlets of the charged particles onto a surface of an object and wherein the system is furthermore configured such that a first number of primary charged particles beamlets are directed onto the object surface such that an array of beam spots are formed on the object surface when the field generating arrangement is switched to the first mode of operation.

6 . The charged particle beam system of claim 5 , further comprising an objective lens for focusing the primary charged particle beamlets onto the surface of the object.

7 . The charged particle beam system of claim 6 , further comprising a detector arrangement, wherein, in the first mode of operation, each primary charged particle beamlet incident on the object surface generates a secondary charged particle beamlet, and wherein the detector arrangement is configured to detect an intensity of each of the secondary charged particle beamlets.

8 . The charged particle system according to claim 7 , wherein the system further comprises a beam splitter configured to separate the beam paths of the primary charged particle beamlets from beam paths of the secondary charged particle beamlets and to direct the secondary charged particle beamlets onto the detector arrangement.

9 . The charged particle system according to claim 4 , wherein the field generating arrangement comprises a first pair of electrodes for generating an electrical field between the first pair of electrodes, wherein a beam path of the beam of charged particles traverses a space between the first pair of electrodes; and
wherein the controller is configured to selectively apply, in the first mode of operation, a first voltage difference to the first pair of electrodes to generate a first electrical field and, in the second mode of operation, a second voltage difference to the first pair of electrodes to generate a second electrical field.

10 . The charged particle system according to claim 9 , wherein an absolute value of the first voltage difference is less than an absolute value of the second voltage difference.

11 . The charged particle system according to claim 9 , wherein an absolute value of the second voltage difference is less than an absolute value of the first voltage difference.

12 . The charged particle system according to claim 9 , wherein the first pair of electrodes includes two electrode plates which are laterally disposed relative to the beam path of the beam of charged particles.

13 . The charged particle system according to claim 12 , further comprising at least a second pair of electrodes including two electrode plates which are laterally disposed relative to the beam path of the beam of charged particles downstream of the first pair of electrodes.

Assignees

• Zeiss Carl Microscopy Gmbh
• Applied Materials Israel Ltd

Inventors

• Kemen Thomas
• Knippelmeyer Rainer
• Schubert Stefan

Classifications

• H01J2237/04924

  electrostatic · CPC title

• H01J2237/2817

  Pattern inspection · CPC title

• H01J2237/2446

  Position sensitive detectors · CPC title

• H01J37/145

  Combinations of electrostatic and magnetic lenses · CPC title

• H01J2237/2561

  electron · CPC title